Patent US4159440A successfully refreshed from Google Patents.
US4159440A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectric guide for electron beam transport
Assignee: Spire Corp
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Filing: 1978-01-20
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Granted: 1979-06-26
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Expires: 1998-01-20
Abstract
Abstract An evacuated enclosure in the form of a cylindrical cavity having a dielectric located therein defines a dielectric guide for transporting an electron beam introduced into the cavity. The dielectric, which is disposed about the cavity wall, is operative to trap the charge associated with normal vacuum expansion of the electron beam. The trapped charge, in cases where the injected electron beam is not space charge limited, modifies the electric fields within the cavity in such a way as to provide focusing forces on the electron beam propagating through the cavity, the focusing forces being sufficient to quide a major portion of the beam through the enclosure without attenuation. Within the injected beam is space charge limited, the trapped charge induces an electrical discharge--either surface flashover or volume puncture of the dielectric--which liberates gaseous material. This gas then ionizes, is attracted by space charge electric fields into the body of the beam, and provides space charge neutralization. In this situation the beam is confirmed by its self-magnetic field and propagates through the cavity with little attenuation.
Inventors
- 👤 Roger G. Little
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:04
CPC Classifications
G; G21; G21K; G21K1/00; G21K1/08; G21K1/093; H; H01; H01J; H01J1/00; H01J1/46; H01J1/48
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
156 words
A system for thermal processing of semiconductors comprising: (a) generator means for generating a short duration pulsed electron beam; (b) a vacuum chamber; (c) transport means for carrying semiconductors into said vacuum chamber; (d) dielectric guide means for transporting said electron beam from said generator means to the semiconductors, said dielectric means including an enclosure defining a cavity adapted to have said electron beam injected therein and a sheet of dielectric material disposed within said cavity for interaction with said electron beam injected into said cavity, said cavity disposed within said vacuum chamber, said sheet of dielectric material is a thin stratum disposed about the boundary of said cavity and defines a surface of revolution which is spaced apart from the surface of said enclosure, said dielectric material interacting with said electron beam and establishing a focusing action for guiding said electron beam from said generator means through said enclosure towards the semiconductors to be processed.
Claim 2
Independent Claim
156 words
A system for thermal processing of semiconductors comprising: (a) generator means for generating a short duration pulsed electron beam; (b) a vacuum chamber; (c) transport means for carrying semiconductors into said vacuum chamber; (d) dielectric guide means for transporting said electron beam from said generator means to the semiconductors, said dielectric means including an enclosure defining a cavity adapted to have said electron beam injected therein and a sheet of dielectric material disposed within said cavity for interaction with said electron beam injected into said cavity, said cavity disposed within said vacuum chamber, said sheet of dielectric material is a thin stratum disposed about the boundary of said cavity and defines a surface of revolution which is spaced apart from the surface of said enclosure, said dielectric material interacting with said electron beam and establishing a focusing action for guiding said electron beam from said generator means through said enclosure towards the semiconductors to be processed.
Claim 3
Dependent Claim
22 words
The system as claimed in claim 1 wherein said enclosure defines a cylindrical cavity having a diameter/length aspect ratio of approximatey 1.5.
Claim 4
Dependent Claim
26 words
The system as claimed in claim 2 wherein said dielectric is in the form of thin stratum that is disposed about the boundary of said cavity.
Claim 5
Independent Claim
112 words
A system for thermal processing of semiconductors comprising: (a) generator means for generating an electron beam; and (b) dielectric guide means for transporting said electron beam from said generator means to the semiconductors, said dielectric means including an enclosure defining a cavity adapted to have said electron beam injected therein and a sheet of dielectric material disposed within said cavity for interaction with said electron beam injected into said cavity, said dielectric material defining a surface of revolution within said cavity, said dielectric material interacting with said electron beam and establishing a focusing action for guiding said electron beam from said generator means through said enclosure towards the semiconductors to be processed.
Claim 6
Independent Claim
112 words
A system for thermal processing of semiconductors comprising: (a) generator means for generating an electron beam; and (b) dielectric guide means for transporting said electron beam from said generator means to the semiconductors, said dielectric means including an enclosure defining a cavity adapted to have said electron beam injected therein and a sheet of dielectric material disposed within said cavity for interaction with said electron beam injected into said cavity, said dielectric material defining a surface of revolution within said cavity, said dielectric material interacting with said electron beam and establishing a focusing action for guiding said electron beam from said generator means through said enclosure towards the semiconductors to be processed.
Claim 7
Dependent Claim
24 words
The system as claimed in claim 4 wherin said sheet of dielectric material is a thin stratum disposed about the boundary of said cavity.
Claim 8
Independent Claim
106 words
A system for thermal processing of semiconductors comprising: (a) generator means for generating an electron beam; and (b) dielectric guide means for transporting said electron beam from said generator means to the semiconductors, said dielectric means including an enclosure defining a cylindrical cavity adapted to have said electron beam injected therein and a single dielectric rod disposed coaxially with the longitudinal axis of said cavity for interaction with said electron beam injected into said cavity, said dielectric rod interacting with said electron beam and establishing a focusing action for guiding said electron beam from said generator means through said enclosure towards the semiconductors to be processed.
Claim 9
Independent Claim
106 words
A system for thermal processing of semiconductors comprising: (a) generator means for generating an electron beam; and (b) dielectric guide means for transporting said electron beam from said generator means to the semiconductors, said dielectric means including an enclosure defining a cylindrical cavity adapted to have said electron beam injected therein and a single dielectric rod disposed coaxially with the longitudinal axis of said cavity for interaction with said electron beam injected into said cavity, said dielectric rod interacting with said electron beam and establishing a focusing action for guiding said electron beam from said generator means through said enclosure towards the semiconductors to be processed.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-06-25 | 1982-12-25 | 1983-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-06-25 | 1986-12-25 | 1987-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-06-25 | 1990-12-25 | 1991-06-26 | $7700.00 | Window Closed / Lapsed |