Packaging structure for semiconductor IC chip and method of packaging the same

Claim 1

A method of packaging a semiconductor IC chip, comprising the steps of: (a) the step of applying a mixture solution of glass having a low melting point on the confronting peripheral surfaces of a ceramic base and a ceramic cap disposed face to face, said glass being recessed so as to be spaced by a predetermined distance from outer edges of said ceramic base and cap in at least those portions of said base and cap where said lead frame is to be disposed, and said glass not being applied to that portion of said base and cap where said semiconductor IC chip is to be located; (b) the step of sintering the thus prepared ceramic base and cap; (c) the step of heating said ceramic base to soften said glass so that said semiconductor IC chip and said lead frame may be fastened to said ceramic base; (d) the step of connecting the bonding pads of said semiconductor IC chip with the corresponding leads of said frame by fine metal wires; (e) the step of fastening said ceramic cap to said ceramic base with said lead frame and said IC chip thereon by means of said glass for sealing said IC chip and a portion of said lead frame wherein said glass layer does not extend outwardly beyond said outer edges of both said ceramic base and said ceramic cap along said lead frame; and (f) the step of supporting said semiconductor IC chip sealed within said ceramic base and cap by jigs, bending the external leads of said lead frame, and removing the unwanted portions of said lead frame by cutting.

Claim 2

A method of packaging a semiconductor IC chip, comprising the steps of: (a) the step of applying a mixture solution of glass having a low melting point on the confronting peripheral surfaces of a ceramic base and a ceramic cap disposed face to face, said glass being recessed so as to be spaced by a predetermined distance from outer edges of said ceramic base and cap in at least those portions of said base and cap where said lead frame is to be disposed, and said glass not being applied to that portion of said base and cap where said semiconductor IC chip is to be located; (b) the step of sintering the thus prepared ceramic base and cap; (c) the step of heating said ceramic base to soften said glass so that said semiconductor IC chip and said lead frame may be fastened to said ceramic base; (d) the step of connecting the bonding pads of said semiconductor IC chip with the corresponding leads of said frame by fine metal wires; (e) the step of fastening said ceramic cap to said ceramic base with said lead frame and said IC chip thereon by means of said glass for sealing said IC chip and a portion of said lead frame wherein said glass layer does not extend outwardly beyond said outer edges of both said ceramic base and said ceramic cap along said lead frame; and (f) the step of supporting said semiconductor IC chip sealed within said ceramic base and cap by jigs, bending the external leads of said lead frame, and removing the unwanted portions of said lead frame by cutting.

Claim 3

A method for manufacturing a semiconductor device having first and second ceramic members, at least one glass layer binding said first and second ceramic members to seal a semiconductor chip therebetween, and lead members extending from the assembly of said ceramic members through said glass layer and being bent in the vicinity of said glass layers, comprising the steps of: applying a glass mixture of a low melting point on facing peripheral surfaces of said first and second ceramic members but spaced from at least portions of outer edges of said ceramic members; sintering said ceramic members and glass mixture applied thereto to form said glass layer respectively on said members; heating said first ceramic member with lead members disposed on said glass layer to bind said lead members to said first ceramic member; placing said second ceramic member on said first ceramic member so that the glass layer of said second ceramic member contacts said lead members bound to said first ceramic member; heating the thus obtained assembly to bind said second ceramic member to said first ceramic member by the respective glass layers; and bending said lead members while holding said lead members in the vicinity of the outer edges of said ceramic members with holding means, wherein said glass layers are formed at a spacing from said holding means which are holding said lead members.

Claim 4

A method for manufacturing a semiconductor device having first and second ceramic members, at least one glass layer binding said first and second ceramic members to seal a semiconductor chip therebetween, and lead members extending from the assembly of said ceramic members through said glass layer and being bent in the vicinity of said glass layers, comprising the steps of: applying a glass mixture of a low melting point on facing peripheral surfaces of said first and second ceramic members but spaced from at least portions of outer edges of said ceramic members; sintering said ceramic members and glass mixture applied thereto to form said glass layer respectively on said members; heating said first ceramic member with lead members disposed on said glass layer to bind said lead members to said first ceramic member; placing said second ceramic member on said first ceramic member so that the glass layer of said second ceramic member contacts said lead members bound to said first ceramic member; heating the thus obtained assembly to bind said second ceramic member to said first ceramic member by the respective glass layers; and bending said lead members while holding said lead members in the vicinity of the outer edges of said ceramic members with holding means, wherein said glass layers are formed at a spacing from said holding means which are holding said lead members.