US4154192A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacturing apparatus for semiconductor devices
Assignee: Mitsubishi Electric Corp
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Filing: 1977-12-09
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Granted: 1979-05-15
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Expires: 1997-12-09
Abstract
Abstract An oxidizing tube encircled by an electric heater is disposed within a pressure envelope. A high pressure inert gas is supplied to the envelope and tube while hydrogen and oxygen are supplied to the tube while being kept at an elevated temperature to react with each other to form steam. The steam oxidizes the surfaces of silicon wafers placed in the tube to form silicon dioxide films on them. Alternatively a water evaporator may be disposed within the pressure envelope to directly supply steam to the tube with the high pressure gas aiding the supply of the steam.
Inventors
- 👤 Natsuro Tsubouchi
- 👤 Akira Nishimoto
- 👤 Kirokazu Moyoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 06:07
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B33/00; C30B33/005
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
171 words
An apparatus for manufacturing semiconductor devices, comprising, in combination, an oxidizing tubular member for hermetically accommodating therein semiconductor substrates to be processed, heating means disposed around the outer periphery of said tubular member for heating both said tubular member and semiconductor substrates therein, a pressure envelope hermetically housing therein both said tubular member and said heating means, inert gas feed means connected to said tubular member and said pressure envelope for introducing an inert gas into said tubular member and said pressure envelope, control means connected to said feed means for controlling the pressure of the inert gas before it is introduced into said tubular member and said pressure envelope, and means for forming an atmosphere of steam within said tubular member having means for introducing hydrogen into said tubular member, means for selectively introducing oxygen into said tubular member, means for controlling the rate of flow of hydrogen being introduced into said tubular member, and means for controlling the rate of flow of oxygen being introduced into said tubular member.
Claim 2
Independent Claim
171 words
An apparatus for manufacturing semiconductor devices, comprising, in combination, an oxidizing tubular member for hermetically accommodating therein semiconductor substrates to be processed, heating means disposed around the outer periphery of said tubular member for heating both said tubular member and semiconductor substrates therein, a pressure envelope hermetically housing therein both said tubular member and said heating means, inert gas feed means connected to said tubular member and said pressure envelope for introducing an inert gas into said tubular member and said pressure envelope, control means connected to said feed means for controlling the pressure of the inert gas before it is introduced into said tubular member and said pressure envelope, and means for forming an atmosphere of steam within said tubular member having means for introducing hydrogen into said tubular member, means for selectively introducing oxygen into said tubular member, means for controlling the rate of flow of hydrogen being introduced into said tubular member, and means for controlling the rate of flow of oxygen being introduced into said tubular member.
Claim 3
Independent Claim
168 words
An apparatus for manufacturing semiconductor devices, comprising, in combination, an oxidizing tubular member for hermetically accommodating therein semiconductor substrates to be processed, heating means disposed around the outer periphery of said tubular member for heating both said tubular member and semiconductor substrates therein, a pressure envelope hermetically housing therein both said tubular member and said heating means, inert gas feed means connected to said tubular member and said pressure envelope for introducing an inert gas into said tubular member and said pressure envelope, control means connected to said feed means for controlling the pressure of the inert gas before it is introduced into said tubular member and said pressure envelope, and means for forming an atmosphere of steam within said tubular member having a water evaporator disposed in said pressure envelope, heater means disposed in said pressure envelope for heating said evaporator for generating steam, and means connected between said water evaporator and said tubular member for introducing said steam generated by said evaporator into said tubular member.
Claim 4
Independent Claim
168 words
An apparatus for manufacturing semiconductor devices, comprising, in combination, an oxidizing tubular member for hermetically accommodating therein semiconductor substrates to be processed, heating means disposed around the outer periphery of said tubular member for heating both said tubular member and semiconductor substrates therein, a pressure envelope hermetically housing therein both said tubular member and said heating means, inert gas feed means connected to said tubular member and said pressure envelope for introducing an inert gas into said tubular member and said pressure envelope, control means connected to said feed means for controlling the pressure of the inert gas before it is introduced into said tubular member and said pressure envelope, and means for forming an atmosphere of steam within said tubular member having a water evaporator disposed in said pressure envelope, heater means disposed in said pressure envelope for heating said evaporator for generating steam, and means connected between said water evaporator and said tubular member for introducing said steam generated by said evaporator into said tubular member.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-05-14 | 1982-11-13 | 1983-05-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-05-14 | 1986-11-13 | 1987-05-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-05-14 | 1990-11-13 | 1991-05-15 | $7700.00 | Window Closed / Lapsed |