US4153741A
Expired / Lapsed
US
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Method for forming a surface relief pattern in a poly(olefin sulfone) layer
Assignee: RCA Corp
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Filing: 1976-07-30
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Granted: 1979-05-08
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Expires: 1996-07-30
Abstract
Abstract This invention pertains to an electron beam resist method for forming a surface relief pattern in a poly(olefin sulfone) layer wherein the polymer layer is useful as a sputter etch mask for transferring the surface relief pattern into a metal layer. The surface relief pattern is formed using poly(3-methyl-1-cyclopentene sulfone) as the poly(olefin sulfone) layer and using a mixture of 2-methylcyclohexanone and 2-methylcyclohexanol or a mixture of benzene and 2-methylcyclohexanol as the developer for the poly(3-methyl-1-cyclopentene sulfone) layer.
Inventors
- 👤 Eugene S. Poliniak
- 👤 Nitin V. Desai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:02
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
92 words
A method for forming a surface relief pattern in a poly(3-methyl-1-cyclopentene sulfone) layer which comprises: (a) exposing the polymer layer to a modulated beam of electrons whereby the portions of the polymer layer exposed to the electron beam becomes more soluble in a solvent developer than the unexposed portions; and (b) contacting the exposed polymer layer to a solvent developer which is selected from the group consisting of a mixture of 2-methylcyclohexanone and 2-methylcyclohexanol and a mixture of benzene and 2-methylcyclohexanol whereby a surface relief pattern is formed in the polymer layer.
Claim 2
Independent Claim
92 words
A method for forming a surface relief pattern in a poly(3-methyl-1-cyclopentene sulfone) layer which comprises: (a) exposing the polymer layer to a modulated beam of electrons whereby the portions of the polymer layer exposed to the electron beam becomes more soluble in a solvent developer than the unexposed portions; and (b) contacting the exposed polymer layer to a solvent developer which is selected from the group consisting of a mixture of 2-methylcyclohexanone and 2-methylcyclohexanol and a mixture of benzene and 2-methylcyclohexanol whereby a surface relief pattern is formed in the polymer layer.
Claim 3
Dependent Claim
25 words
A method according to claim 1 wherein the mixture of 2-methylcyclohexanone and 2-methylcyclohexanol is about 50% by weight 2-methylcyclohexanone and about 50% by weight 2-methylcyclohexanol.
Claim 4
Dependent Claim
25 words
A method according to claim 1 wherein the mixture of benzene and 2-methylcyclohexanol is about 15% by weight benzene and about 85% by weight 2-methylcyclohexanol.
Claim 5
Dependent Claim
20 words
A method according to claim 1 wherein the poly(3-methyl-1-cyclopentene sulfone) has a molecular weight of about 500,000 to about 3,000,000.
Claim 6
Dependent Claim
17 words
A method according to claim 1 wherein the poly(3-methyl-1-cyclopentene sulfone) has a molecular weight of about 2,000,000.
Claim 7
Dependent Claim
16 words
A method according to claim 1 wherein the poly(3-methyl-1-cyclopentene sulfone) layer is about 1 micron thick.
Claim 8
Independent Claim
122 words
A method for forming a surface relief pattern in a metal layer which comprises: (a) exposing a poly(3-methyl-1-cyclopentene sulfone) layer in contact with the metal layer to a modulated beam of electrons whereby the portions of the polymer layer exposed to the electron beam become more soluble in a solvent developer than the unexposed portions; (b) contacting the exposed polymer layer to the solvent developer which is selected from the group consisting of a mixture of 2-methylcyclohexanone and 2-methylcyclohexanol and a mixture of benzene and 2-methylcyclohexanol whereby a surface relief pattern is formed in the polymer layer; and (c) bombarding the polymer layer with sufficient ions to substantially remove the polymer layer and etch the surface relief pattern into the metal layer.
Claim 9
Independent Claim
122 words
A method for forming a surface relief pattern in a metal layer which comprises: (a) exposing a poly(3-methyl-1-cyclopentene sulfone) layer in contact with the metal layer to a modulated beam of electrons whereby the portions of the polymer layer exposed to the electron beam become more soluble in a solvent developer than the unexposed portions; (b) contacting the exposed polymer layer to the solvent developer which is selected from the group consisting of a mixture of 2-methylcyclohexanone and 2-methylcyclohexanol and a mixture of benzene and 2-methylcyclohexanol whereby a surface relief pattern is formed in the polymer layer; and (c) bombarding the polymer layer with sufficient ions to substantially remove the polymer layer and etch the surface relief pattern into the metal layer.
Claim 10
Dependent Claim
25 words
A method according to claim 7 wherein the mixture of 2-methylcyclohexanone and 2-methylcyclohexanol is about 50% by weight 2-methylcyclohexanone and about 50% by weight 2-methylcyclohexanol.
Claim 11
Dependent Claim
25 words
A method according to claim 7 wherein the mixture of benzene and 2-methylcyclohexanol is about 15% by weight benzene and about 85% by weight 2-methylcyclohexanol.
Claim 12
Dependent Claim
20 words
A method according to claim 7 wherein the poly(3-methyl-1-cyclopentene sulfone) has a molecular weight of about 500,000 to about 3,000,000.
Claim 13
Dependent Claim
17 words
A method according to claim 7 wherein the poly(3-methyl-1-cyclopentene sulfone) has a molecular weight of about 2,000,000.
Claim 14
Dependent Claim
16 words
A method according to claim 7 wherein the poly(3-methyl-1-cyclopentene sulfone) layer is about 1 micron thick.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-05-07 | 1982-11-06 | 1983-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-05-07 | 1986-11-06 | 1987-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-05-07 | 1990-11-06 | 1991-05-08 | $7700.00 | Window Closed / Lapsed |