Patent US3364506A successfully refreshed from Google Patents.
US4149095A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic structure for storing electrical charges
Assignee: Thales SA
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Filing: 1976-04-08
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Granted: 1979-04-10
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Expires: 1996-04-08
Abstract
Abstract An electret consisting of a conductive electrode embedded in insulating materials, is provided. In comparison with conventional electrets comprising a dielectric storage member, this electret exhibits a much higher capacity. Moreover it can be manufactured together with an integrated circuit incorporating the structure according to the invention, onto its substrate. For charging the electret an electrolytic process is utilized, if necessary through an opening perforated in the upper insulating layer. In the latter case the metal constituting the electrode can be advantageously be oxidized by anodic oxidation. The lifetime is improved by the oxide layer.
Inventors
- 👤 Raymond Poirier
- 👤 Nicolas Szydlo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:02
CPC Classifications
H; H01; H01G; H01G9/00; H04; H04R; H04R19/00
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
93 words
In a semiconductor device having a semiconductor substrate and a group of discrete components and integrated circuits, the improvement consisting of an electret integrated in said device, comprising: a first layer laid down on said semiconductor substrate of said device and made of a dielectric incapable of transporting ions; a second layer contiguous to said first layer and made of electret material capable of storing 500 nanocoulombs per cm 2 of electronic charge; and at least a third layer contiguous to said second layer and made of a dielectric capable of transporting ions.
Claim 2
Dependent Claim
93 words
In a semiconductor device having a semiconductor substrate and a group of discrete components and integrated circuits, the improvement consisting of an electret integrated in said device, comprising: a first layer laid down on said semiconductor substrate of said device and made of a dielectric incapable of transporting ions; a second layer contiguous to said first layer and made of electret material capable of storing 500 nanocoulombs per cm 2 of electronic charge; and at least a third layer contiguous to said second layer and made of a dielectric capable of transporting ions.
Claim 3
Dependent Claim
21 words
The improvement recited in claim 1, wherein: said electret material is silicon, and said third layer is made of silicon oxide.
Claim 4
Dependent Claim
22 words
The improvement recited in claim 1 wherein: said electret material is a metal, and said third layer is made of silicon oxide.
Claim 5
Dependent Claim
11 words
The improvement recited in claim 3 wherein: said metal is aluminum.
Claim 6
Dependent Claim
11 words
The improvement recited in claim 3 wherein: said metal is tantalum.
Claim 7
Dependent Claim
95 words
In a semiconductor device having a semiconductor substrate, the improvement consisting of an electret integrated in said device, comprising: a first layer laid down on said semiconductor substrate of said device and made of a dielectric incapable of transporting ions; a second layer contiguous to said first layer and made of an electret metal capable of storing 500 nanocoulombs per cm 2 of electronic charge; a third layer contiguous to said second layer and made of an oxide of said metal; and a fourth layer contiguous to said third layer and made of a dielectric.
Claim 8
Dependent Claim
95 words
In a semiconductor device having a semiconductor substrate, the improvement consisting of an electret integrated in said device, comprising: a first layer laid down on said semiconductor substrate of said device and made of a dielectric incapable of transporting ions; a second layer contiguous to said first layer and made of an electret metal capable of storing 500 nanocoulombs per cm 2 of electronic charge; a third layer contiguous to said second layer and made of an oxide of said metal; and a fourth layer contiguous to said third layer and made of a dielectric.
Claim 9
Dependent Claim
15 words
The improvement recited in claim 6, wherein: said fourth layer is made of silicon oxide.
Claim 10
Dependent Claim
11 words
The improvement recited in claim 7, wherein: said metal is aluminum.
Claim 11
Dependent Claim
11 words
The improvement recited in claim 7 wherein: said metal is tantalum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-09 | 1982-10-09 | 1983-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-09 | 1986-10-09 | 1987-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-09 | 1990-10-09 | 1991-04-10 | $7700.00 | Window Closed / Lapsed |