Process for the manufacture of a capacitor dielectric with inner blocking layers

Claim 1

In a method for the manufacture of a capacitor dielectric with inner blocking layers in which starting components are provided comprising: polycrystalline ceramic solids of materials with perovskite structure on the basis of barium titanate of the general formula (Ba.sub.1-x M.sub.x.sup.II) O· z(Ti.sub.1-y M.sub.y.sup.IV) O.sub.2 with M II selected from the group consisting of Ca, Sr, Pb, Mg and M IV selected from the group consisting of Zr, Sn where z is in a range from 1.005 to 1.05, at least two different doping substances in the dielectric of which one substance selected from the group consisting of antimony, niobium, lanthanum and bismuth is in the interior of the crystallite and causes predominantly n-type conductivity and the other selected from the group consisting of copper, iron, and manganese is in the surface layer of the crystallite and causes predominantly p-type conductivity of which the proportion of the n-type doping substance which causes the n-conductivity is larger by a factor of 1.5 to 2.5 than a maximum of the doping substance, and the proportion of the substance which causes the p-type conductivity amounts to 0.01 to 0.15% by weight; and wherein said starting components are mixed, ground and thereafter are brought to solid state reaction at 950° C. to 1100° C. to produce a perovskite material, after which a product of the reaction is ground again to desired particle size and solid dielectric bodies of desired shape are produced from the powder by pressing; and wherein the bodies are then subjected to sintering at 1250° C. to 1450° C. for one to six hours; wherein the improvement comprises adding a powder ground out of sintered material of the same gross composition as said dielectric bodies in quantities of 1 to 70% by weight to the ground product of said solid state reaction in approximately the same particle size; intensively mixing the ground powder; and then performing said steps of producing the solid dielectric bodies of desired shape by pressing and sintering at 1250° C. to 1450° C.