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US4143386A
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Junction type field effect transistor
Assignee: Telefunken Electronic GmbH
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Filing: 1977-06-28
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Granted: 1979-03-06
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Expires: 1997-06-28
Abstract
Abstract A junction type field effect transistor comprises a source region and a drain region extending into a semiconductor body further than the channel region and a gate region located entirely within the channel region between the source and drain regions, leaving an exposed external surface. The invention also includes a method of making such a transistor.
Inventors
- 👤 Reinhold Kaiser
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 03:04
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/328; H10D30/00; H10D30/80; H10D30/83
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
145 words
In a junction-type field-effect transistor having a semiconductor body of a first conductivity type, spaced source and drain regions of the opposite conductivity type extending into said semiconductor body from one major surface of same, a channel region of said opposite conductivity type extending into said semiconductor body from said one major surface and extending along said one major surface from said source region to said drain region, and a gate region of said first conductivity type extending into said channel region from said one major surface, said source region and said drain region extending deeper into said semiconductor body than does said channel region, the improvement wherein said gate region is embedded completely in said channel region in the portion of same between said source region and said drain region except for the portion of said gate region which extends along said major surface.
Claim 2
Dependent Claim
145 words
In a junction-type field-effect transistor having a semiconductor body of a first conductivity type, spaced source and drain regions of the opposite conductivity type extending into said semiconductor body from one major surface of same, a channel region of said opposite conductivity type extending into said semiconductor body from said one major surface and extending along said one major surface from said source region to said drain region, and a gate region of said first conductivity type extending into said channel region from said one major surface, said source region and said drain region extending deeper into said semiconductor body than does said channel region, the improvement wherein said gate region is embedded completely in said channel region in the portion of same between said source region and said drain region except for the portion of said gate region which extends along said major surface.
Claim 3
Dependent Claim
74 words
A field-effect transistor as defined in claim 1, wherein the portions of said channel region extending to said major surface of said semiconductor body and which extend between said source and said drain regions have a sheet resistance (ohms per unit area) which is at most 50% smaller than that of the portion of said channel region which extends parallel to said major surface of said semiconductor body and is beneath said gate region.
Claim 4
Dependent Claim
70 words
A field-effect transistor as defined in claim 1, wherein the portions of said channel region extending to said major surface of said semiconductor body and which extend between said source and said drain regions, have a sheet resistance which is the same or greater than the sheet resistance of the portions of said channel region extending parallel to said major surface of said semiconductor body and beneath said gate region.
Claim 5
Dependent Claim
77 words
A field-effect transistor as defined in claim 1, wherein the sheet resistance of the portions of said channel region extending to said major surface of said semiconductor body and which extend between said source and said drain regions have as large a sheet resistance as possible but less than that at which the desired break down voltage between said gate region and said source or drain and/or between said gate region and said substrate cannot be maintained.
Claim 6
Dependent Claim
65 words
A field-effect transistor as defined in claim 1, wherein the portions of said channel region extending to said major surface of said semiconductor body and which extend between said source and said drain regions have the same impurity concentration and the same thickness as the portion of said channel region extending parallel to said major surface of said semmiconductor body and beneath said gate region.
Claim 7
Dependent Claim
73 words
In a method of manufacturing a field-effect transistor as defined in claim 1 including forming said source, drain, channel and gate regions in said semiconductor body by introducing selected impurities into desired portions of the semiconductor body, the improvement comprising introducing the impurities for said channel region and said gate region into said semiconductor body through one and the same window in an insulating layer located on the surface of said semiconductor body.
Claim 8
Dependent Claim
42 words
A method as defined in claim 6, and comprising initially forming said source and drain regions in said semiconductor body and thereafter introducing the impurities said channel region and said gate region into said semiconductor body through one and the same window.
Claim 9
Dependent Claim
27 words
A method as defined in claim 6, and comprising forming said semiconductor regions in said semiconductor body by means of diffusion or by means of ion implantation.
Claim 10
Dependent Claim
128 words
A junction-type field-effect transistor comprising a semiconductor body of a first conductivity type, a source region of the opposite conductivity type in said semiconductor body, a drain region of the opposite conductivity type in said semiconductor body, a channel region of said opposite conductivity type in said semiconductor body, said channel region extending between said source and drain regions and a shorter distance into said semiconductor body than said source region and said drain region, and a gate region of opposite conductivity type to said channel region and located entirely within said channel region between said source region and said drain region except for an exposed external surface whereby said gate region is electrically isolated from the other portions of the semiconductor body with the same conductivity type.
Claim 11
Dependent Claim
128 words
A junction-type field-effect transistor comprising a semiconductor body of a first conductivity type, a source region of the opposite conductivity type in said semiconductor body, a drain region of the opposite conductivity type in said semiconductor body, a channel region of said opposite conductivity type in said semiconductor body, said channel region extending between said source and drain regions and a shorter distance into said semiconductor body than said source region and said drain region, and a gate region of opposite conductivity type to said channel region and located entirely within said channel region between said source region and said drain region except for an exposed external surface whereby said gate region is electrically isolated from the other portions of the semiconductor body with the same conductivity type.
Claim 12
Independent Claim
101 words
A method of manufacturing a junction-type field-effect transistor comprising introducing spaced source and drain regions of a first conductivity type into a semiconductor body of the opposite conductivity type, introducing a channel region of said first conductivity type into said semiconductor body between said source and drain regions and to a depth less than that of said source and drain regions, and introducing a gate region of opposite conductivity type to said channel region totally into said channel region between said source and drain regions leaving a free exterior surface for said gate region on the surface of said semiconductor body.
Claim 13
Independent Claim
101 words
A method of manufacturing a junction-type field-effect transistor comprising introducing spaced source and drain regions of a first conductivity type into a semiconductor body of the opposite conductivity type, introducing a channel region of said first conductivity type into said semiconductor body between said source and drain regions and to a depth less than that of said source and drain regions, and introducing a gate region of opposite conductivity type to said channel region totally into said channel region between said source and drain regions leaving a free exterior surface for said gate region on the surface of said semiconductor body.
References Cited (Backward Citations)
US4053915A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-03-05 | 1982-09-04 | 1983-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-03-05 | 1986-09-04 | 1987-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-03-05 | 1990-09-04 | 1991-03-06 | $7700.00 | Window Closed / Lapsed |