US4142662A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of bonding microelectronic chips
Assignee: AT&T Inc
•
Filing: 1978-01-27
•
Granted: 1979-03-06
•
Expires: 1998-01-27
Abstract
Abstract Disclosed is a method of bonding microelectronic chips to bonding surfaces utilizing thin, soft bonding material preforms. The bonding material, such as indium, is formed on a carrier strip. A portion of the material is transferred from the strip by bringing it in contact with the bonding surface and supplying pressure to the strip. The chip may then be bonded to the coated surface.
Inventors
- 👤 Walter R. Holbrook
- 👤 Louis A. Koszi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:05
CPC Classifications
H; H10; H10W; H10W99/00; H10W70/00; H10W70/20; H10W70/24; H10W72/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/30; H10W72/351; H10W72/353; H10W72/354
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
103 words
A method of bonding a microelectronic chip (16) to a bonding surface (11) comprising the steps of applying a bonding material (15) to at least a portion of the bonding surface and placing a microelectronic chip on the portion of the bonding surface including the bonding material, wherein the improvement comprises: providing a carrier strip (13) which includes on one surface a layer (12) of said bonding material; contacting a portion of said bonding material to the bonding surface; and applying pressure to the opposite surface of the carrier strip in order to transfer said portion of bonding material to the bonding surface.
Claim 2
Independent Claim
103 words
A method of bonding a microelectronic chip (16) to a bonding surface (11) comprising the steps of applying a bonding material (15) to at least a portion of the bonding surface and placing a microelectronic chip on the portion of the bonding surface including the bonding material, wherein the improvement comprises: providing a carrier strip (13) which includes on one surface a layer (12) of said bonding material; contacting a portion of said bonding material to the bonding surface; and applying pressure to the opposite surface of the carrier strip in order to transfer said portion of bonding material to the bonding surface.
Claim 3
Dependent Claim
15 words
The method according to claim 1 wherein the bonding material is a soft, ductile material.
Claim 4
Dependent Claim
24 words
The method according to claim 1 wherein the bonding material is selected from the group consisting of indium, gold, tin, lead and alloys thereof.
Claim 5
Dependent Claim
12 words
The method according to claim 1 wherein the bonding material is indium.
Claim 6
Dependent Claim
27 words
The method according to claim 1 wherein pressure is applied to the carrier strip by an applicator (14) which is agitated essentially parallel to the bonding surface.
Claim 7
Dependent Claim
19 words
The method according to claim 1 wherein the thickness of the bonding material is within the range 2-4 microns.
Claim 8
Dependent Claim
19 words
The method according to claim 1 wherein the bonding material is formed on the carrier strip by vapor deposition.
Claim 9
Dependent Claim
23 words
The method according to claim 1 wherein the bonding material is formed on the carrier strip in the form of a longitudinal stripe.
Claim 10
Dependent Claim
19 words
The method according to claim 1 wherein the thickness of the carrier strip lies within the range 1-10 mils.
Claim 11
Dependent Claim
27 words
The method according to claim 1 wherein the microelectronic chip is a laser device and the bonding surface is the top surface of a mounting stud (10).
Claim 12
Dependent Claim
17 words
The method according to claim 1 wherein the bonding material is heated while said pressure is applied.
Claim 13
Independent Claim
168 words
A method of bonding a microelectronic chip (16) to a bonding surface (11) comprising the steps of applying a bonding material (15) selected from the group consisting of indium, gold, tin, lead, and alloys thereof to at least a portion of the bonding surface, placing a microelectronic chip on the portion of the bonding surface including the bonding material, and heating the resulting structure to bond the chip to the surface, wherein the improvement comprises: vapor depositing a layer (12) of said bonding material onto at least a portion of one surface of a carrier strip (13); contacting a portion of said bonding material to the bonding surface; heating the bonding material to a temperature below its melting point; and applying pressure to the opposite surface of the carrier strip by means of a pressure applicator (14) in contact with the surface over the said portion of the bonding material, which applicator is agitated in order to transfer the said portion of bonding material to the bonding surface.
Claim 14
Independent Claim
168 words
A method of bonding a microelectronic chip (16) to a bonding surface (11) comprising the steps of applying a bonding material (15) selected from the group consisting of indium, gold, tin, lead, and alloys thereof to at least a portion of the bonding surface, placing a microelectronic chip on the portion of the bonding surface including the bonding material, and heating the resulting structure to bond the chip to the surface, wherein the improvement comprises: vapor depositing a layer (12) of said bonding material onto at least a portion of one surface of a carrier strip (13); contacting a portion of said bonding material to the bonding surface; heating the bonding material to a temperature below its melting point; and applying pressure to the opposite surface of the carrier strip by means of a pressure applicator (14) in contact with the surface over the said portion of the bonding material, which applicator is agitated in order to transfer the said portion of bonding material to the bonding surface.
Claim 15
Independent Claim
186 words
A method of bonding a microelectronic laser chip (16) to the surface (11) of a mounting stud (10) comprising the steps of applying a layer of indium (15) to a portion of the surface of the mounting stud, placing the laser chip on the portion of the surface including the indium layer, and heating the resulting structure to a temperature below the melting point of indium to bond the chip to the surface, wherein the improvement comprises: vapor depositing the indium in the shape of a longitudinal stripe (12) with a thickness of 2-4 microns onto one surface of a polyester strip (13); contacting a portion of said indium stripe to the surface of the mounting stud; heating the indium to a temperature of 60-100 degrees C.; applying pressure to the opposite surface of the polyester strip by means of a pressure applicator (14) in contact with the surface over said portion of the indium stripe; and agitating the applicator and polyester strip in the longitudinal direction of the indium stripe to transfer the portion of the indium stripe to the surface of the mounting stud.
Claim 16
Independent Claim
186 words
A method of bonding a microelectronic laser chip (16) to the surface (11) of a mounting stud (10) comprising the steps of applying a layer of indium (15) to a portion of the surface of the mounting stud, placing the laser chip on the portion of the surface including the indium layer, and heating the resulting structure to a temperature below the melting point of indium to bond the chip to the surface, wherein the improvement comprises: vapor depositing the indium in the shape of a longitudinal stripe (12) with a thickness of 2-4 microns onto one surface of a polyester strip (13); contacting a portion of said indium stripe to the surface of the mounting stud; heating the indium to a temperature of 60-100 degrees C.; applying pressure to the opposite surface of the polyester strip by means of a pressure applicator (14) in contact with the surface over said portion of the indium stripe; and agitating the applicator and polyester strip in the longitudinal direction of the indium stripe to transfer the portion of the indium stripe to the surface of the mounting stud.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-03-05 | 1982-09-04 | 1983-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-03-05 | 1986-09-04 | 1987-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-03-05 | 1990-09-04 | 1991-03-06 | $7700.00 | Window Closed / Lapsed |