Abstract Semiconductor devices are provided in which a vitreous support member such as translucent glass plate serves as a principal support member for the semiconductor body of the device. One or more metallized paths are provided on a face of the vitreous support member which serves as a sealing surface. A major face of the semiconductor body equipped with one or more conductive contacts are provided, if desired, with an insulative and passivating layer, through which the contacts are exposed, is situated in confronting contacting relation with the vitreous support member and so arranged that the semiconductor body contacts register with the metallized paths on the vitreous support member. The vitreous support member and semiconductor body are permanently united by a thermo-electrostatic bond formed by heating to a temperature in the range of about 300-450* C and application of an electrostatic field of about 200-500 volts d.c. and a magnetic field having a flux density of about 3,000 to 20,000 gauss, such thermo-electrostatic bond also permanently uniting the metallized paths to the support member and to the semiconductor body, as well as permanently uniting the contacts on the semiconductor body to the metallized paths.
In a process for making a semiconductor device the steps comprising forming a layer of metallization on at least a part of a sealing surface of a vitreous support member to constitute an electrical lead, placing in confronting contact with said sealing surface a face of a semiconductor body having a metallic contact so that said metallic contact is in registry with said lead on the support member, heating said support member and semiconductor body to a temperature of about 300* to 450*C, and applying an electrostatic field of about 200 to 500 volts d.c. between said heated support member and semiconductor body, with the negative side of said field at the support member and the positive side at the semiconductor body, while independently applying to said support member and body a magnetic field having flux lines extending generally in the plane of said contacting surfaces and having a flux density of about 3,000 to 20,000 gauss, said magnetic field assisting in the vicinity of the electrostatic field to bond the confronting faces of the semiconductor body and support member to permanently unite the contact to the lead and the lead to the support member and the semiconductor body to the support member.
Claim 2
Dependent Claim
203 words
In a process for making a semiconductor device the steps comprising forming a layer of metallization on at least a part of a sealing surface of a vitreous support member to constitute an electrical lead, placing in confronting contact with said sealing surface a face of a semiconductor body having a metallic contact so that said metallic contact is in registry with said lead on the support member, heating said support member and semiconductor body to a temperature of about 300* to 450*C, and applying an electrostatic field of about 200 to 500 volts d.c. between said heated support member and semiconductor body, with the negative side of said field at the support member and the positive side at the semiconductor body, while independently applying to said support member and body a magnetic field having flux lines extending generally in the plane of said contacting surfaces and having a flux density of about 3,000 to 20,000 gauss, said magnetic field assisting in the vicinity of the electrostatic field to bond the confronting faces of the semiconductor body and support member to permanently unite the contact to the lead and the lead to the support member and the semiconductor body to the support member.