US4139909A
Expired / Lapsed
US
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Optoelectronic memory
Assignee: Individual
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Filing: 1977-05-26
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Granted: 1979-02-13
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Expires: 1997-05-26
Abstract
Abstract An optoelectronic memory comprising the following elements placed one after another in succession downstream the original beam from the source of electromagnetic radiation: a means for scanning the original beam, which is electrically connected to an address register, a means for splitting the original beam into m beams forming a scan pattern and a focusing lens. The focusing lens is followed by n beam splitters whose number along each beam direction is equal. The memory also comprises |n+1| information memory plates each being positioned at a focal distance from the focusing lens and carrying m memory modules arranged upon the surface facing the beam. The memory modules are made as multilayer structures comprising the following elements placed downstream the beam: a transparent electrode electrically connected to the output of an information recording register, layers of at least two dielectrics and a semiconductor and an electrode electrically connected to the input of the information readout register.
Inventors
- 👤 Vsevolod V. Kitovich
- 👤 Valentin G. Strakhov
- 👤 Jury M. Popov
- 👤 Anatoly F. Plotnikov
- 👤 Vladimir N. Seleznev
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 09:54
CPC Classifications
G; G11; G11C; G11C13/00; G11C13/04; G11C13/047
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
252 words
An optoelectronic memory comprising: a source of electromagnetic radiation, producing an original beam; a means for scanning said original beam, placed along said original beam after said source of electromagnetic radiation and having an input; an address register having an output electrically connected to said input of said means for scanning of said original beam; a means for splitting said original beam into m beams forming a scan pattern, placed along said original beam after said means for scanning said original beam; a focusing lens placed along said original beam after said means for splitting said original beam; n beam splitters placed after said focusing lens along each said m beams and splitting each said beam into two beams; said beam splitters placed along each direction of said beams so that in the direction of each said beam their number is uniform; |n+1| information memory plates, each being placed at a focal distance from said focusing lens after the last of said beam splitters along said beam and having one of its surfaces facing said beam; m memory modules, each being made as a multilayer structure and being arranged on said surfaces of said information memory plates; said multilayer structure comprising, arranged along said beam, a first transparent electrode, next layers selected in a specified combination from a group containing at least two dielectrics and a semiconductor, and a second electrode; an information recording register electrically connected to said first transparent electrode; an information readout register electrically connected to said second electrode.
Claim 2
Dependent Claim
252 words
An optoelectronic memory comprising: a source of electromagnetic radiation, producing an original beam; a means for scanning said original beam, placed along said original beam after said source of electromagnetic radiation and having an input; an address register having an output electrically connected to said input of said means for scanning of said original beam; a means for splitting said original beam into m beams forming a scan pattern, placed along said original beam after said means for scanning said original beam; a focusing lens placed along said original beam after said means for splitting said original beam; n beam splitters placed after said focusing lens along each said m beams and splitting each said beam into two beams; said beam splitters placed along each direction of said beams so that in the direction of each said beam their number is uniform; |n+1| information memory plates, each being placed at a focal distance from said focusing lens after the last of said beam splitters along said beam and having one of its surfaces facing said beam; m memory modules, each being made as a multilayer structure and being arranged on said surfaces of said information memory plates; said multilayer structure comprising, arranged along said beam, a first transparent electrode, next layers selected in a specified combination from a group containing at least two dielectrics and a semiconductor, and a second electrode; an information recording register electrically connected to said first transparent electrode; an information readout register electrically connected to said second electrode.
Claim 3
Dependent Claim
65 words
An optoelectronic memory as defined in claim 1 wherein light passing said transparent electrode is absorbed in said semiconductor layer, said light being free from absorption by said dielectric layers, said semiconductor layer having substantially high sensitivity to light of the multilayer structure, said light transmitted by said transparent electrode having a negative voltage pulse over a predetermined threshold value from said information recording register.
References Cited (Backward Citations)
US3787823A
Cited
US3767285A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-02-12 | 1982-08-14 | 1983-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-02-12 | 1986-08-14 | 1987-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-02-12 | 1990-08-14 | 1991-02-13 | $7700.00 | Window Closed / Lapsed |