US3787823A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Light controllable charge transfer device
Assignee: Toshiba Corp
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Filing: 1972-07-17
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Granted: 1974-01-22
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Expires: 1992-07-17
Abstract
Abstract A light controllable charge transfer device wherein one surface of a monolithic semiconductor substrate is coated with a photoelectric conductive layer whose surface is covered with a transparent electrode; a bias voltage is applied across the transparent electrode and the opposite surface of said semiconductor substrate; and control light consisting of holding beams and transferring beams, after being introduced, is moved along the surface of the photoelectric conductive layer through said transparent electrode so as to form depletion layers in the semiconductor substrate for storing charged carriers representing bit information.
Inventors
- 👤 S Negishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:13
CPC Classifications
G; G11; G11C; G11C13/00; G11C13/04; G11C13/048; G11C19/00; G11C19/28; G11C19/282; H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/191
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
176 words
A light controllable charge transfer device comprising: a monolithic semiconductor substrate for storing charge carriers representing bit information; an insulating layer formed on one surface of said monolithic semiconductor substrate; a photoelectric conductive layer deposited on the surface of said insulating layer; a transparent electrode mounted on the surface of said photoelectric conductive layer; means for applying bias voltage across said monolithic semiconductor substrate and said transparent electrode; a source of first light for introducing carrier storing light to said photoelectric conductive layer through said transparent electrode to form in said monolithic semiconductor substrate at least one first well of depletion layers in which carriers are charged; and a source of second light for introducing transferring light to said photoelectric conductor layer through said transparent electrode to form in said monolithic semiconductor substrate a second well of a depletion layer partly superposed on said first well and having a depth at least as deep as said first well, said transferring light being shiftable along the surface of said photoelectric conductive layer to transfer said charged carriers.
Claim 2
Dependent Claim
176 words
A light controllable charge transfer device comprising: a monolithic semiconductor substrate for storing charge carriers representing bit information; an insulating layer formed on one surface of said monolithic semiconductor substrate; a photoelectric conductive layer deposited on the surface of said insulating layer; a transparent electrode mounted on the surface of said photoelectric conductive layer; means for applying bias voltage across said monolithic semiconductor substrate and said transparent electrode; a source of first light for introducing carrier storing light to said photoelectric conductive layer through said transparent electrode to form in said monolithic semiconductor substrate at least one first well of depletion layers in which carriers are charged; and a source of second light for introducing transferring light to said photoelectric conductor layer through said transparent electrode to form in said monolithic semiconductor substrate a second well of a depletion layer partly superposed on said first well and having a depth at least as deep as said first well, said transferring light being shiftable along the surface of said photoelectric conductive layer to transfer said charged carriers.
Claim 3
Dependent Claim
60 words
The charge transfer device according to claim 1 wherein said deviCe further comprises a plurality of control electrodes provided between said insulating layer and said photoelectric conductive layer and means for selectively applying bias voltage across the opposite surface of said substrate and said transparent electrode as well as across the opposite surface of said substrate and said control electrodes.
Claim 4
Dependent Claim
37 words
The charge transfer device according to claim 1 comprising grid-like opaque portions formed on the transparent electrode, said grid-like opaque portions defining a plurality of transparent regions each corresponding to the carriers stored in the semiconductor substrate.
Claim 5
Dependent Claim
23 words
The charge transfer device according to claim 3 wherein said grid-like opaque portions comprise depositing conductive metal layers deposited on the transparent electrode.
Claim 6
Dependent Claim
32 words
The charge transfer device according to claim 1 wherein said photoelectric conductive layer includes raised grid-like portions defining a plurality of recessions, each corresponding to the carriers stored in the semiconductor substrate.
Claim 7
Dependent Claim
43 words
The charge transfer device according to claim 1 further comprising a fly''s eye lens fitted on the surface of said transparent electrode, said fly''s eye lens having a plurality of unit elements, each of which focuses a source light on the transparent electrode.
Claim 8
Dependent Claim
34 words
The charge transfer device according to claim 1 wherein said bit information is provided by information light, and wherein said carrier storing light and transferring light have different wave lengths than said information light.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-01-21 | 1977-07-23 | 1978-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-01-21 | 1981-07-23 | 1982-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-01-21 | 1985-07-23 | 1986-01-22 | $7700.00 | Window Closed / Lapsed |