Abstract It is desirable to coat large area, thin sheets of large-grain polycrystalline silicon on an inexpensive ceramic substrate for use in solar cell applications and the like. Such ceramic substrate as are used are chosen from those having thermal expansion coefficients similar to those of silicon. The ceramics meeting these requirements, for example mulite, alumina and zirconia, when brought into contact with molten silicon, however, are not wet by the silicon and no coating takes place. In this invention the structure includes an interface layer comprising carbon on the surface of such a substrate to render the surface wettable by molten silicon. With this interface layer the ceramic of the type which is not wet by molten silicon can be successfully coated with silicon.
A crystalline silicon coating on a ceramic substrate comprising: a ceramic substrate of a type which is not wet by molten silicon; an interface layer comprising carbon on at least a portion of the surface of said ceramic body to render said surface portion wettable by molten silicon; and a layer of crystalline silicon grown onto said carbon coated ceramic by contacting the carbon coated ceramic with molten silicon to form said silicon layer.
Claim 2
Dependent Claim
74 words
A crystalline silicon coating on a ceramic substrate comprising: a ceramic substrate of a type which is not wet by molten silicon; an interface layer comprising carbon on at least a portion of the surface of said ceramic body to render said surface portion wettable by molten silicon; and a layer of crystalline silicon grown onto said carbon coated ceramic by contacting the carbon coated ceramic with molten silicon to form said silicon layer.
Claim 3
Dependent Claim
52 words
A silicon semiconductor article comprising: a ceramic substrate of a type which is not wet by molten silicon, to at least a portion of which substrate a coating containing carbon has been added; and a crystalline layer of silicon grown on the substrate at said portion where said coating had been added.
Claim 4
Dependent Claim
52 words
A silicon semiconductor article comprising: a ceramic substrate of a type which is not wet by molten silicon, to at least a portion of which substrate a coating containing carbon has been added; and a crystalline layer of silicon grown on the substrate at said portion where said coating had been added.
Claim 5
Dependent Claim
15 words
The invention according to claim 2 wherein said crystalline layer is grown from molten silicon.