Abstract A monolithic integrated circuit is formed having semiconductor components disposed in surface regions of a semiconductor body, said regions being electrically isolated from the remaining semiconductor body by a pn-junction plane. The regions into which the semiconductor components are formed are electrically isolated by heavily doping surface areas of a substrate with phosphorus, antimony and/or arsenic impurities which are of the opposite conductivity from the substrate. After said doping, an epitaxial layer having a conductivity opposite to that of the substrate is formed over the entire substrate surface with a doping concentration lower than that of the substrate so that during subsequent high temperature processing steps, the substrate impurity out-diffuses into the epitaxial layer and the phosphorus of the heavily doped surface areas diffuses downwardly into the substrate to form a step-like pn-junction surface alternately extending into the substrate and into the epitaxial layer. During subsequent processing operations, an impurity of the same conductivity type as used in the substrate is diffused downwardly from the surface of the epitaxial layer to meet the out-diffused substrate impurity to complete the isolation of surface regions of the semiconductor body into which the semiconductor components are formed.
A method of forming an isolated region of semiconductive material having a first type impurity in a semiconductor body of a second type of impurity, said isolated region including a highly doped buried layer of first type impurity, comprising the steps of: diffusing a surface area of a semiconductor substrate of second type impurity with an impurity of the first type and having a first diffusion rate; diffusing said area of the semiconductor substrate with a second impurity of the first type and having a second diffusion rate slower than the first diffusion rate; forming an epitaxial layer over the entire surface of the semiconductor substrate, said epitaxial layer having a first type of impurity with a concentration less than that of the substrate; and diffusing into the surface of the epitaxial layer a second type impurity into an isolating zone surrounding the region and continuing said diffusion until the impurity of the substrate outdiffuses through the epitaxial layer to meet the impurity of the isolating zone which diffuses inwardly, so that the region of first type impurity is entirely surrounded by a continuous region of second type impurity and the impurity having the first diffusion rate diffused inwardly into the substrate so that a continuous pn-junction surface is formed about the region and the impurity having the second diffusion rate forms the buried layer.
Claim 2
Independent Claim
225 words
A method of forming an isolated region of semiconductive material having a first type impurity in a semiconductor body of a second type of impurity, said isolated region including a highly doped buried layer of first type impurity, comprising the steps of: diffusing a surface area of a semiconductor substrate of second type impurity with an impurity of the first type and having a first diffusion rate; diffusing said area of the semiconductor substrate with a second impurity of the first type and having a second diffusion rate slower than the first diffusion rate; forming an epitaxial layer over the entire surface of the semiconductor substrate, said epitaxial layer having a first type of impurity with a concentration less than that of the substrate; and diffusing into the surface of the epitaxial layer a second type impurity into an isolating zone surrounding the region and continuing said diffusion until the impurity of the substrate outdiffuses through the epitaxial layer to meet the impurity of the isolating zone which diffuses inwardly, so that the region of first type impurity is entirely surrounded by a continuous region of second type impurity and the impurity having the first diffusion rate diffused inwardly into the substrate so that a continuous pn-junction surface is formed about the region and the impurity having the second diffusion rate forms the buried layer.
Claim 3
Dependent Claim
30 words
A method according to claim 1, wherein an element of a semiconductor component is diffused into the surface of the epitaxial layer simultaneously with the diffusion of the isolating zone.
Claim 4
Dependent Claim
42 words
A method according to claim 2, wherein additional elements of a semiconductor component are diffused into the surface of the epitaxial layer, during which diffusion steps the outwardly diffused impurities of the substrate meet the inwardly diffused impurities of the isolation zone.
Claim 5
Dependent Claim
45 words
A method as described in claim 1, additionally comprising the step of forming a semiconductor component in the surface of the epitaxial layer above the highly doped area, while simultaneously diffusing the impurities of the isolating zone inwardly and the impurities of the substrate outwardly.