US4131525A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a body having a gold pattern and body manufactured according to the method
Assignee: US Philips Corp
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Filing: 1977-08-29
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Granted: 1978-12-26
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Expires: 1997-08-29
Abstract
Abstract The invention relates to a method of manufacturing a body having a gold pattern in which an etchant-resistant and electrically insulating masking layer is provided locally on the surface of a gold layer present on the body and parts of the surface of the gold layer not covered by the masking layer are subjected to a chemical etching treatment in an etching bath in which the gold pattern is formed. According to the invention, the gold layer during the chemical etching treatment is given a potential with respect to an electrode in the etching bath and this potential is adjusted to a value such that the etch rate is maintained at a rate no higher than the rate of the chemical etching treatment.
Inventors
- 👤 Rudolf P. Tijburg
- 👤 Teunis van Dongen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:01
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; C; C25; C25F; C25F3/00; C25F3/02; C25F3/14; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
131 words
A method of manufacturing a semiconductor body having a patterned gold layer, which comprises the steps of: providing a semiconductor body; providing a gold layer on a surface of said semiconductor body; locally providing an etchant-resistant and electrically insulating patterned masking layer on the surface of said gold layer; subjecting the masked gold layer to a chemical etching treatment at a selected rate in an etching bath to form the patterned gold layer; applying a potential to said gold layer with respect to an electrode in the etching bath during the etching treatment; and selecting the magnitude of the applied potential to be such that the etch rate is maintained at a rate no higher than said selected rate of the chemical etching treatment in the absence of an applied voltage.
Claim 2
Independent Claim
131 words
A method of manufacturing a semiconductor body having a patterned gold layer, which comprises the steps of: providing a semiconductor body; providing a gold layer on a surface of said semiconductor body; locally providing an etchant-resistant and electrically insulating patterned masking layer on the surface of said gold layer; subjecting the masked gold layer to a chemical etching treatment at a selected rate in an etching bath to form the patterned gold layer; applying a potential to said gold layer with respect to an electrode in the etching bath during the etching treatment; and selecting the magnitude of the applied potential to be such that the etch rate is maintained at a rate no higher than said selected rate of the chemical etching treatment in the absence of an applied voltage.
Claim 3
Dependent Claim
41 words
A method as in claim 1, wherein a patterned insulating layer is provided on said body prior to providing the gold layer, and wherein said gold layer is then provided partly on said body and partly on said patterned insulating layer.
Claim 4
Dependent Claim
19 words
A semiconductor body having a patterned gold layer manufactured by means of the method as claimed in claim 1.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-12-25 | 1982-06-26 | 1982-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-12-25 | 1986-06-26 | 1986-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-12-25 | 1990-06-26 | 1990-12-26 | $7700.00 | Window Closed / Lapsed |