US3418226A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of electrolytically etching a semiconductor having a single impurity gradient
Assignee: International Business Machines Corp
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Filing: 1965-05-18
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Granted: 1968-12-24
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Expires: 1985-05-18
Abstract
No abstract record available.
Inventors
- 👤 John C Marinace
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:44
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/617; H10P50/613; Y; Y10; Y10S; Y10S148/00; Y10S148/051
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-12-24 | 1972-06-24 | 1972-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-12-24 | 1976-06-24 | 1976-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-12-24 | 1980-06-24 | 1980-12-24 | $7700.00 | Window Closed / Lapsed |