Process for the continuous multistage degasification of liquid sulfur

Claim 2

A process for the degasification of H 2 S-rich liquid sulfur which comprises (1) continuously introducing said sulfur into the first stage of a contacting zone containing more than one discrete contacting stage such that the sulfur occupies the lower portion of said contacting zone; (2) continuously introducing an H 2 S-lean carrier gas into the upper portion of the first stage of said contacting zone such that said carrier gas is separated from the liquid sulfur by an interface; (3) continuously withdrawing H 2 S-lean liquid sulfur depleted in H 2 S from the lower portion of a subsequent stage of said contacting zone; and (4) continuously withdrawing an H 2 S-rich carrier gas from the upper portion of a subsequent stage of said contacting zone, the liquid sulfur within said contacting zone being maintained within a temperature range of from about 120° to about 160° C. as well as being recirculated within at least one discrete contacting stage at a rate of from about 1 to about 100 times the sulfur feed rate to said contacting stage.

Claim 3

The process of claim 1 wherein H 2 S-lean liquid sulfur withdrawn from the contacting zone contains less than 15 wppm H 2 S.

Claim 4

The process of claim 1 wherein the contacting zone is a sulfur pit which receives the effluent from a process which forms liquid sulfur from H 2 S.

Claim 5

The process of claim 1 wherein the H 2 S-rich liquid sulfur contains from about 70 to about 300 wppm H 2 S.

Claim 6

The process of claim 1 wherein the contacting zone comprises 3 discrete contacting stages.

Claim 7

The process of claim 1 wherein the H 2 S-lean carrier gas is free of H 2 S.

Claim 8

The process of claim 1 wherein ammonia is added to the liquid sulfur.

Claim 9

A process for the degasification of H 2 S-rich liquid sulfur which comprises (1) continuously introducing said sulfur into the first stage of a contacting zone containing more than one discrete contacting stage such that the sulfur occupies the lower portion of said contacting zone; (2) continuously introducing an H 2 S-lean carrier gas into the upper portion of at least one subsequent stage of said contacting zone such that said carrier gas is separated from said liquid sulfur by an interface; (3) continuously withdrawing H 2 S-lean liquid sulfur depleted in H 2 S from said lower portion of at least one subsequent stage of said contacting zone; and (4) continuously withdrawing at least a portion of an H 2 S-rich carrier gas from said upper portion of said first stage of said contacting zone, the liquid sulfur within said contacting zone being maintained within a temperature range of from about 120° to about 160° C. and being recirculated within at least one discrete contacting stage at a rate of from about 1 to about 100 times the sulfur feed rate to said contacting stage.

Claim 10

A process for the degasification of H 2 S-rich liquid sulfur which comprises (1) continuously introducing said sulfur into the first stage of a contacting zone containing more than one discrete contacting stage such that the sulfur occupies the lower portion of said contacting zone; (2) continuously introducing an H 2 S-lean carrier gas into the upper portion of at least one subsequent stage of said contacting zone such that said carrier gas is separated from said liquid sulfur by an interface; (3) continuously withdrawing H 2 S-lean liquid sulfur depleted in H 2 S from said lower portion of at least one subsequent stage of said contacting zone; and (4) continuously withdrawing at least a portion of an H 2 S-rich carrier gas from said upper portion of said first stage of said contacting zone, the liquid sulfur within said contacting zone being maintained within a temperature range of from about 120° to about 160° C. and being recirculated within at least one discrete contacting stage at a rate of from about 1 to about 100 times the sulfur feed rate to said contacting stage.

Claim 11

The process of claim 8 wherein ammonia is added to the liquid sulfur.

Claim 12

The process of claim 8 wherein the contacting zone is a sulfur pit which receives the effluent from a process which forms liquid sulfur from H 2 S.

Claim 13

The process of claim 8 wherein the H 2 S-lean liquid sulfur contains less than 15 wppm H 2 S.

Claim 14

The process of claim 8 wherein the H 2 S-lean carrier gas is an inert gas or air.

Claim 15

The process of claim 8 wherein the contacting zone comprises three discrete contacting stages.

Claim 16

The process of claim 8 wherein the H 2 S content in the H 2 S-rich carrier gas is between 0.5 and 1.5 volume %.

Claim 17

The process of claim 8 wherein the H 2 S-lean carrier gas of (2) is introduced and the H 2 S-lean liquid sulfur of (3) is withdrawn from the last stage of said contacting zone.