US4130826A — Monolithic integrated semiconductor circuit

Claim 1

Independent Claim 385 words

A monolithical semiconductor circuit including an integrated semiconductor array having a plurality of low ON-state resistance switching transistors formed in a common semiconductor body in bipolar technology, particularly for use in switching networks of telephone exchanges and transmission devices, for selectively connecting a series of input lines as desired to one or several output lines, each of said switching transistors being constructed as a vertical NPN transistor which has a large downward current amplification factor and a large upward current amplification factor and is characterized by the following features: (a) a first selective layer of a second type of conductivity opposite to a first type of conductivity introduced into a substrate region of said semiconductor body and of said first type of conductivity, (b) a less heavily doped second layer of said second type of conductivity epitaxially grown on said first layer, (c) a third layer of said first type of conductivity selectively introduced into said second layer, (d) a fourth layer having as large an area as possible of said second type of conductivity selectively introduced into said third layer, (e) a region of said second conductivity type encircling said second, third and fourth layer, which form said vertical NPN transistor, and forming a largely tank shaped region of said second type of conductivity with said first layer, (f) said tank shaped region is surrounded by a first frame-like region of said second type of conductivity, (g) said first frame-like region is surrounded by a second frame-like region of said first type of conductivity, said second frame-like region extending from the surface of said semiconductor body to said substrate, being more highly doped than said substrate and serving to insulate said vertical NPN transistor, and (h) said substrate, said tank-shaped region, and said third and fourth layer are provided with respective connections; and wherein, for each of said switching transistors, said connection of said tank shaped region and the connection of said fourth layer are connected to the respective input and output lines to be switched through, said connection of said third layer is connected to a triggering circuit for the associated switching transistor and, as desired, to a control circuit, and said connection of said substrate is connected to a dc voltage potential which is negative with respect to said tank shaped region.

Claim 2

Dependent Claim 385 words

A monolithical semiconductor circuit including an integrated semiconductor array having a plurality of low ON-state resistance switching transistors formed in a common semiconductor body in bipolar technology, particularly for use in switching networks of telephone exchanges and transmission devices, for selectively connecting a series of input lines as desired to one or several output lines, each of said switching transistors being constructed as a vertical NPN transistor which has a large downward current amplification factor and a large upward current amplification factor and is characterized by the following features: (a) a first selective layer of a second type of conductivity opposite to a first type of conductivity introduced into a substrate region of said semiconductor body and of said first type of conductivity, (b) a less heavily doped second layer of said second type of conductivity epitaxially grown on said first layer, (c) a third layer of said first type of conductivity selectively introduced into said second layer, (d) a fourth layer having as large an area as possible of said second type of conductivity selectively introduced into said third layer, (e) a region of said second conductivity type encircling said second, third and fourth layer, which form said vertical NPN transistor, and forming a largely tank shaped region of said second type of conductivity with said first layer, (f) said tank shaped region is surrounded by a first frame-like region of said second type of conductivity, (g) said first frame-like region is surrounded by a second frame-like region of said first type of conductivity, said second frame-like region extending from the surface of said semiconductor body to said substrate, being more highly doped than said substrate and serving to insulate said vertical NPN transistor, and (h) said substrate, said tank-shaped region, and said third and fourth layer are provided with respective connections; and wherein, for each of said switching transistors, said connection of said tank shaped region and the connection of said fourth layer are connected to the respective input and output lines to be switched through, said connection of said third layer is connected to a triggering circuit for the associated switching transistor and, as desired, to a control circuit, and said connection of said substrate is connected to a dc voltage potential which is negative with respect to said tank shaped region.

Claim 3

Dependent Claim 21 words

A circuit as defined in claim 1, wherein said tank shaped region completely surrounds said structure forming said vertical NPN transistor.

Claim 4

Dependent Claim 26 words

A circuit as defined in claim 1, wherein said triggering circuit and a plurality of said vertical NPN transistors are integrated in a common semiconductor body.

Claim 5

Dependent Claim 30 words

A circuit as defined in claim 1, wherein said triggering circuit and the control circuit and a plurality of said vertical NPN transistors are integrated in a common semiconductor body.

Claim 6

Dependent Claim 67 words

A circuit as defined in claim 1, wherein said connection of said tank shaped region of said vertical NPN transistor is connected to a first line of low resistance to direct current and at a reference potential, and said connection of said fourth layer is connected to a second line which is of high resistance to direct current and is to be connected to said first line.

Claim 7

Dependent Claim 27 words

A circuit as defined in claim 1, wherein said triggering circuit includes an interface circuit for triggering the respective vertical NPN transistor and a logic circuit part.

Claim 8

Dependent Claim 82 words

A circuit as defined in claim 6, wherein said logic circuit part emits a binary output signal and said interface circuit is so constructed that, with an output signal of one binary type, the output of said interface circuit acts as a high resistance current source switching on said vertical NPN transistor and, when there is an output signal of the other binary type, the output of said interface circuit acts as a low resistance voltage source disconnecting said vertical NPN transistor.

Claim 9

Dependent Claim 19 words

A circuit as defined in claim 7, wherein said current source of said interface circuit comprises a compound circuit.

Claim 10

Dependent Claim 120 words

A circuit as defined in claim 8, wherein said compound circuit comprises two complementary transistors where the NPN-transistor of said compound circuit is connected by its emitter to said third layer of said vertical NPN transistor, by its base to the collector of the PNP transistor of said compound circuit and by its collector to the emitter of said PNP transistor of said compound circuit and via a first resistor to a first voltage source whose voltage is selected for switching on said vertical NPN transistor via said compound circuit, and where said PNP transistor is connected by its base to a second resistor and, via a construction element bringing about a constant voltage drop, to said first voltage source.

Claim 11

Dependent Claim 23 words

A circuit as defined in claim 9, wherein said logic circuit part comprises a circuit constructed in accordance with I 2 L technique.

Claim 12

Dependent Claim 23 words

A circuit as defined in claim 10, wherein said logic circuit part contains a store, inverter, decoder and logic input and output circuits.

Claim 13

Dependent Claim 20 words

A circuit as defined in claim 11, and comprising an interface circuit and a store for each vertical NPN transistor.

Claim 14

Dependent Claim 25 words

A circuit as defined in claim 12, wherein said store contains a flip flop with two inverters in accordance with I 2 L circuit technology.

Claim 15

Dependent Claim 88 words

A circuit as defined in claim 13, wherein said inverters of said flip flop each include a NPN transistor each with at least two collectors insulated respectively from one another, with one of said two NPN transistors of said flip flop connected by its collector via said second resistor to said compound circuit and the other of said two NPN transistors of said flip flop being connected to said third layer of said vertical NPN transistor by at least one collector either directly or via an additional circuit.

Claim 16

Dependent Claim 59 words

A circuit as defined in claim 14, further comprising means for connecting one of the emitters of said two NPN transistors of said flip flop to a second voltage source and means for connecting the said other of said two NPN transistors of said flip flop directly to said third layer of said vertical NPN transistor by one collector.

Claim 17

Dependent Claim 149 words

A circuit as defined in claim 14, wherein said two NPN transistors of said flip flop have their emitters at reference potential and said other of said two NPN transistors of said flip flop is connected at one collector via an additional circuit to said third layer of said vertical NPN transistor; and wherein said additional circuit comprises a PNP transistor which is realized in accordance with the technology for I 2 L circuits and is connected by its base to one collector of said other of said two NPN transistors of said flip flop, and a NPN transistor connected by its base via a third resistor to its emitter which is directly connected to a fourth voltage source, by its base either directly or via a fourth resistor to the collector of said PNP transistor, and by a collector to said third layer of said vertical NPN transistor.

Claim 18

Dependent Claim 45 words

A circuit as defined in claim 14, further comprising further inverters in accordance with I 2 L circuit technology for setting said flip flop, with each said further inverter connected by its collector to the base of the respective NPN transistor of said flip flop.

Claim 19

Dependent Claim 64 words

A circuit as defined in claim 15 and comprising a pair of said vertical NPN transistors and said of compound circuits for every two pairs of said lines to be connected with said other of said two transistors of said flip flop having three collectors, one said collector connected directly to the respective one of said third layers of said two vertical NPN transistors.

Claim 20

Dependent Claim 60 words

A circuit as defined in claim 16 and comprising a pair of said vertical NPN transistors and of said compound circuits for every two pairs of lines to be connected, with said NPN transistor of said additional circuit having two collectors, one said collector being connected to the respective one of said third layers of said two vertical NPN transistors.

Claim 21

Dependent Claim 88 words

A circuit as defined in claim 9, wherein said transistors of said compound circuit comprise an assembly of a further vertical NPN transistor with a lateral PNP transistor, both made in accordance with the technology for I 2 L, with said lateral PNP transistor constructed to have as small a surface as possible and having a rectangular structure and a current amplification factor in emitter connection for alternating current of the order of magnitude of 2 to 4 in a collector current range of 5 to 20 μA.

Claim 22

Dependent Claim 27 words

A circuit as defined in claim 17, wherein said individual inverters of said flip flop also comprise a part of a control logic of the switching array.

Claim 23

Dependent Claim 57 words

A circuit as defined in claim 2, wherein all said vertical NPN transistors lying on one row or column of a switching array and constructed as switching transistors are brought together in said second frame-like region and a part of its respective tank shaped region is common to at least two of these said vertical NPN transistors.

Claim 24

Dependent Claim 43 words

A circuit as defined in claim 2, wherein all said vertical NPN transistors lying on one row or column of a switching array and constructed as switching transistors are brought together in said second frame-like region and have a common tank shaped region.

Claim 25

Dependent Claim 248 words

A monolithic integrated semiconductor switching array comprising a plurality of low on-state resistance vertical bipolar switching transistors formed in a common semiconductor body having a substrate region of a first type of conductivity, each of said switching transistors including a first layer of a second type of conductivity on said substrate region, a second layer of said second type of conductivity on said first layer and of lower doping than said first layer, a third layer of said first type of conductivity in said second layer, a fourth layer of said second type of conductivity in said third layer, a region of said second type of conductivity and more highly doped than said second layer, encircling said second, third and fourth layers to form a tank like structure with said first layer, a first frame-like region of said second type of conductivity encircling said tank like structure and being of a lower doping than said tank like structure, a second frame-like region of said first type of conductivity encircling said first frame-like region and in contact with said substrate region and first and second connecting means on said tank like structure and on said fourth layer respectively for connecting same to respective lines to be connected together by the associated transistor, third connecting means on said third layer for connection to a trigger circuit for the transistor and fourth connecting means on said substrate region for connection to a potential negative with respect to said tank like structure.

Claim 26

Dependent Claim 248 words

A monolithic integrated semiconductor switching array comprising a plurality of low on-state resistance vertical bipolar switching transistors formed in a common semiconductor body having a substrate region of a first type of conductivity, each of said switching transistors including a first layer of a second type of conductivity on said substrate region, a second layer of said second type of conductivity on said first layer and of lower doping than said first layer, a third layer of said first type of conductivity in said second layer, a fourth layer of said second type of conductivity in said third layer, a region of said second type of conductivity and more highly doped than said second layer, encircling said second, third and fourth layers to form a tank like structure with said first layer, a first frame-like region of said second type of conductivity encircling said tank like structure and being of a lower doping than said tank like structure, a second frame-like region of said first type of conductivity encircling said first frame-like region and in contact with said substrate region and first and second connecting means on said tank like structure and on said fourth layer respectively for connecting same to respective lines to be connected together by the associated transistor, third connecting means on said third layer for connection to a trigger circuit for the transistor and fourth connecting means on said substrate region for connection to a potential negative with respect to said tank like structure.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1981-12-18	1982-06-19	1982-12-19	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1985-12-18	1986-06-19	1986-12-19	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1989-12-18	1990-06-19	1990-12-19	$7700.00	Window Closed / Lapsed

Monolithic integrated semiconductor circuit

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