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US4129880A Expired / Lapsed US ⏱️ 0.0 years remaining

Channel depletion boundary modulation magnetic field sensor

Assignee: International Business Machines Corp
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Filing: 1977-07-01
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Granted: 1978-12-12
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Expires: 1997-07-01
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Abstract

Abstract A high sensitivity, low noise, broad bandwidth channel conduction field sensor device is described. The conductive channel is configured to create an exceptionally narrow, undepleted conduction channel of approximately filamentary form. The filamentary conductive channel so formed is provided with a source at one end of the channel and two or more laterally spaced drains at the other end thereof. Electric or magnetic fields may be utilized to deflect a stream of charge carriers traversing the conductive channel from the source toward the drains utilizing the depletion width modulation effect of the fields upon the boundaries defining the conductive channel portion. Modulation of the depletion zone width and depth along the channel sides effectively moves the stream of carriers and the conductive channel area to overlap one drain more than another. This develops a differential drain current balance which can be utilized to provide an output signal. Width and length criteria for defining a filamentary channel structure are described for the ultimate desired configuration and size which are to be obtained. As noted, operation of the device is based upon modulation of the width and depth of the depletion zone boundaries defining the conductive channel. An increased signal output is obtained by reducing the width of the channel to eliminate excess carriers normally found in wide channel devices and, further, by making the depletion zones as large a portion of the total channel width as can be obtained.

Inventors

  • 👤 Albert W. Vinal

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 14:01
CPC Classifications
G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R29/00; G01R29/08; G01R29/0864; G01R29/0878; G11; G11B; G11B5/00; G11B5/127; G11B5/33; H; H10; H10D; H10D30/00; H10D30/80; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D48/40; H10D62/00; H10D62/10; H10D62/17; H10D62/213

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 77 words
In a semiconductive, channel conduction, field sensor device having a substrate of semiconductive material, a source region and at least two separated drain regions in said substrate and a conductive channel in said substrate connecting said source and said drains, the improvement comprising: said channel of conducting material having a filamentary form defined by having a Vinhall width to channel width ratio in the vicinity of said source that is greater than 0 and less than 0.98.
Claim 2
Dependent Claim 77 words
In a semiconductive, channel conduction, field sensor device having a substrate of semiconductive material, a source region and at least two separated drain regions in said substrate and a conductive channel in said substrate connecting said source and said drains, the improvement comprising: said channel of conducting material having a filamentary form defined by having a Vinhall width to channel width ratio in the vicinity of said source that is greater than 0 and less than 0.98.
Claim 3
Dependent Claim 54 words
In a device as described in claim 1, the improvement further comprising: the distance between said source and said drains divided by said Vinhall width is greater than one-half of the value defined by the load resistance multiplied by the channel charrier density and by the channel carrier mobility and the electron unit charge.
Claim 4
Dependent Claim 41 words
In a device as described in claim 1, the improvement further comprising: the ratio of the Vinhall width of said channel in the vicinity of said drains to the Vinhall width of said channel at said source is greater than 1.
Claim 5
Dependent Claim 71 words
In a device as described in claim 1, the improvement further comprising: the ratio of the Vinhall width of said channel at a point along said channel intermediate said source and said drains to the Vinhall width of said channel at said drains is greater than 1; and the ratio of said width at said intermediate point along said channel to said Vinhall width at said source is equal to one.
Claim 6
Dependent Claim 23 words
In a device as described in claim 1, the improvement further comprising: said separation between said drains is less than said Vinhall width.
Claim 7
Dependent Claim 39 words
In a device as described in claim 1, the improvement further comprising: said drains have a dimension taken parallel to the center of said channel which is less than equal to the distance separating said drains from one another.
Claim 8
Dependent Claim 55 words
In a device as described in claim 1, the improvement further comprising: said channel lying beneath the surface of said substrate and being separated therefrom by a layer of material of opposite conductivity to said channel and being separated from the surface of said substrate by a distance which is less than said Vinhall width.
Claim 9
Dependent Claim 36 words
In a device as described in claim 1, the improvement further comprising: the Vinhall width of said channel is greater than the thickness of said channel in the direction perpendicular to the surface of said substrate.
Claim 10
Dependent Claim 34 words
In a device as described in claim 1, the improvement further comprising: said Vinhall width in the vicinity of said drains is greater than 0 and less than a quantity (2KT/q) V S B.
Claim 11
Dependent Claim 36 words
In a device as described in claim 1, the improvement further comprising: voltage means applied to said source and said drains of sufficient magnitude to pinch off said conductive channel in the vicinity of said drains.

References Cited (Backward Citations)

US3994010A Cited
US3997909A Cited
US4048648A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1981-12-11 1982-06-12 1982-12-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1985-12-11 1986-06-12 1986-12-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1989-12-11 1990-06-12 1990-12-12 $7700.00 Window Closed / Lapsed

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