Single transverse mode operation in double heterostructure junction laser

Claim 2

A single transverse mode semiconductor laser which comprises a semiconductor structure having optical resonator defining parallel opposed surfaces, said semiconductor structure comprising: (a) a semiconductor substrate of a first conduction type; (b) an optical confinement semiconductor layer of the first conduction type that is provided on said semiconductor substrate and has a refractive index of n 3 ; (c) an optical waveguide active semiconductor layer that is provided on said optical confinement semiconductor layer and has a refractive index of n 1 ; (d) a buffer semiconductor layer of a second conduction type that is provided on said optical waveguide active semiconductor layer, and has a refractive index of n 2 ; (e) a mode controlling striped semiconductor layer of the second conduction type that is provided on said buffer semiconductor layer, has a width a, and has a refractive index of n 6 ; (f) a contact forming semiconductor cap layer of the second conduction type that is provided on said mode controlling striped semiconductor layer; (g) a first ohmic contact provided on said contact forming semiconductor cap layer; and (h) a second ohmic contact provided on the bottom surface of said substrate; wherein said refractive indexes satisfy the relations: n.sub.6 ≦ n.sub.2 < n.sub.1 and n.sub.3 < n.sub.1 ; and said width a of said mode controlling striped semiconductor layer satisfies the relation: a ≦ λ.sub.o /(2n.sub.1 √2Δn), where λ o is the wavelength of propagated light in free space and Δn is a specific equivalent refractive index difference given by: ##EQU6## wherein n A is a standardized propagation for a first region, said first region including said mode controlling striped semiconductor layer and the portions of said optical confinement, optical waveguide, and buffer semiconductor layers that lie beneath said mode controlling striped semiconductor layer, and n B is a standardized propagation constant for a second region, said second region including the portions of said optical confinement, optical waveguide active, and buffer semiconductor layers that are adjacent to said first region.

Claim 3

A semiconductor laser according to claim 1 wherein said optical waveguide active semiconductor layer is up to about 0.5 μm thick.

Claim 4

A semiconductor laser according to claim 1 wherein said optical waveguide active semiconductor layer is about 0.2-0.5 μm thick, said width a of said mode controlling striped semiconductor layer is about 3-10 μm, and said buffer semiconductor layer is about 0.2-0.5 μm thick.

Claim 5

A semiconductor laser according to claim 1 wherein said optical waveguide active semiconductor layer is about 0.3 μm thick, said buffer semiconductor layer is about 0.4 μm thick, and said mode controlling striped semiconductor layer is about 5.0 μm wide.

Claim 6

A single transverse mode semiconductor laser which comprises a semiconductor structure having optical resonator defining parallel opposed surfaces, said semiconductor structure comprising: (a) a GaAs substrate of a first conduction type; (b) an Al.sub.(w) Ga.sub.(1-w) As optical confinement layer of the first conduction type that is provided on said semiconductor substrate and has a refractive index of n 3 ; (c) an Al.sub.(x) Ga.sub.(1-x) As optical waveguide active layer that is provided on said optical confinement semiconductor layer, is up to about 0.5 μm thick, and has a refractive index of n 1 ; (d) an Al.sub.(y) Ga.sub.(1-w) As buffer layer of a second conduction type that is provided on said optical waveguide active semiconductor layer, and has a refractive index of n 2 ; (e) an Al.sub.(z) Ga.sub.(1-z) As mode controlling striped semiconductor layer of the second conduction type that is provided on said buffer semiconductor layer, has a width a, and has a refractive index of n 6 ; (f) a contact forming semiconductor cap layer of the second conduction type that is provided on said mode controlling striped semiconductor layer; (g) a first ohmic contact provided on said contact forming semiconductor cap layer; and (h) a second ohmic contact provided on the bottom surface of said substrate; wherein the values of w, x, y and z are selected so that said refractive indexes satisfy the relations: n.sub.6 ≦ n.sub.2 < n.sub.1 and n.sub.3 < n.sub.1 ; and said width a of said mode controlling striped semiconductor layer satisfies the relation: a ≦ λ.sub.o /(2n.sub.1 √2Δn), where λ o is the wavelength of propagated light in free space and Δn is a specific equivalent refractive index difference given by: ##EQU7## where n A is a standardized propagation for a first region, said first region including said mode controlling striped semiconductor layer and the portions of said optical confinement, optical waveguide, and buffer semiconductor layers that lie beneath said mode controlling striped semiconductor layer, and n B is a standardized propagation constant for a second region, said second region including the portions of said optical confinemeent optical waveguide active, and buffer semiconductor layers that are adjacent to said first region.

Claim 7

A single transverse mode semiconductor laser which comprises a semiconductor structure having optical resonator defining parallel opposed surfaces, said semiconductor structure comprising: (a) a GaAs substrate of a first conduction type; (b) an Al.sub.(w) Ga.sub.(1-w) As optical confinement layer of the first conduction type that is provided on said semiconductor substrate and has a refractive index of n 3 ; (c) an Al.sub.(x) Ga.sub.(1-x) As optical waveguide active layer that is provided on said optical confinement semiconductor layer, is up to about 0.5 μm thick, and has a refractive index of n 1 ; (d) an Al.sub.(y) Ga.sub.(1-w) As buffer layer of a second conduction type that is provided on said optical waveguide active semiconductor layer, and has a refractive index of n 2 ; (e) an Al.sub.(z) Ga.sub.(1-z) As mode controlling striped semiconductor layer of the second conduction type that is provided on said buffer semiconductor layer, has a width a, and has a refractive index of n 6 ; (f) a contact forming semiconductor cap layer of the second conduction type that is provided on said mode controlling striped semiconductor layer; (g) a first ohmic contact provided on said contact forming semiconductor cap layer; and (h) a second ohmic contact provided on the bottom surface of said substrate; wherein the values of w, x, y and z are selected so that said refractive indexes satisfy the relations: n.sub.6 ≦ n.sub.2 < n.sub.1 and n.sub.3 < n.sub.1 ; and said width a of said mode controlling striped semiconductor layer satisfies the relation: a ≦ λ.sub.o /(2n.sub.1 √2Δn), where λ o is the wavelength of propagated light in free space and Δn is a specific equivalent refractive index difference given by: ##EQU7## where n A is a standardized propagation for a first region, said first region including said mode controlling striped semiconductor layer and the portions of said optical confinement, optical waveguide, and buffer semiconductor layers that lie beneath said mode controlling striped semiconductor layer, and n B is a standardized propagation constant for a second region, said second region including the portions of said optical confinemeent optical waveguide active, and buffer semiconductor layers that are adjacent to said first region.

Claim 8

A semiconductor laser according to claim 5 wherein x = 0, w = 0.3, y = 0.2, and z = 0.4.

Claim 9

A semiconductor laser according to claim 6 wherein said buffer layer is about 0.2-0.5 μm thick and said mode controlling striped layer has a width a of about 3-8 μm, and said optical waveguide layer is about 0.2-0.5 μm thick.

Claim 10

A semiconductor laser according to claim 6 wherein said optical waveguide active layer is about 0.3 μm thick, said mode controlling striped layer has a width a of about 5 μm, and said buffer semiconductor layer is about 0.4 μm thick.

Claim 11

A semiconductor laser according to claim 5 wherein x = 0, w = 0.3, y = 0.2 and z = 0.5.

Claim 12

A semiconductor laser according to claim 5, wherein w = 0.3, 0 < x ≦ 0.1, y = 0.2, and z = 0.5.

Claim 13

A semiconductor laser according to claim 10 wherein said optical confinement layer is n type Al 0 .3 Ga 0 .7 As, said optical waveguide active layer is p-type Al x Ga.sub.(1-x) As, said buffer layer is p-type Al 0 .2 Ga 0 .8 As, and said mode controlling striped layer is p-type Al 0 .5 Ga 0 .5 As.

Claim 14

A semiconductor laser according to claim 5 wherein w = 0.3, 0 < x ≦ 0.1, y = 0.2, and z = 0.04.

Claim 15

A semiconductor laser according to claim 12 wherein said optical confinement layer is n-type Al 0 .3 Ga 0 .7 As, said optical waveguide active layer is p-type Al x Ga.sub.(1-x) As, said buffer layer is p-type Al 0 .2 Ga 0 .8 As, and said mode controlling striped layer is p-type Al 0 .4 Ga 0 .6 As.

Claim 16

A semiconductor laser according to claim 13 wherein said optical waveguide active layer is about 0.2 to about 0.5 μm thick, said mode controlling striped semiconductor layer has a width a of about 3 μm to about 8 μm, and said buffer layer has a thickness of about 0.2 μm to about 0.5 μm.

Claim 17

A semiconductor laser according to claim 13 wherein said optical waveguide active layer is about 0.3 μm thick, said mode controlling striped layer is about 5.0 μm wide, and said buffer layer is about 0.4 μm thick.