Patent US4128439A successfully refreshed from Google Patents.
US4128439A
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Method for forming self-aligned field effect device by ion implantation and outdiffusion
Assignee: International Business Machines Corp
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Filing: 1977-08-01
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Granted: 1978-12-05
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Expires: 1997-08-01
Abstract
Abstract A method is provided for making a field effect transistor which comprises forming a layer of an ion beam masking material on the surface of a semiconductor body of one-type conductivity having at least two adjacent apertures with at least a portion of the masking layer between these apertures and in contact with the semiconductor body surface being an electrically insulative material. Then, a beam of ions of opposite-type conductivity is directed at the mask body at an energy and dosage sufficient to form two buried regions of opposite-type conductivity fully enclosed within said one-type body respectively beneath these two apertures. Finally, sufficient heat is applied so that the two buried regions diffuse upward until they extend respectively to the surface of the semiconductor body beneath the two apertures; the masking material must have a melting point above the temperature of the diffusion step.
Inventors
- 👤 Chakrapani G. Jambotkar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:09
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10P30/202; H10P30/204; H10P30/28; H10P32/00; H10P32/30; H10P32/302; H10P76/00; H10P76/40
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
135 words
A method for making a semiconductor device comprising forming a layer of ion beam masking material on the surface of a semiconductor body of one-type conductivity, said masking layer having formed therein at least one pair of adjacent apertures, directing a beam of ions of opposite-type conductivity at said masked body at energy and dosage levels sufficient to form a pair of buried regions of opposite-type conductivity fully enclosed within said one-type conductivity body beneath said pair of apertures, and heating to diffuse said pair of buried regions upward until the upward diffusion of said buried regions respectively extend to said surface beneath said apertures while the downward diffusion front remains spaced from the lower surface of the said semiconductor body, said masking material having a melting point above the temperature of said diffusion step.
Claim 2
Independent Claim
135 words
A method for making a semiconductor device comprising forming a layer of ion beam masking material on the surface of a semiconductor body of one-type conductivity, said masking layer having formed therein at least one pair of adjacent apertures, directing a beam of ions of opposite-type conductivity at said masked body at energy and dosage levels sufficient to form a pair of buried regions of opposite-type conductivity fully enclosed within said one-type conductivity body beneath said pair of apertures, and heating to diffuse said pair of buried regions upward until the upward diffusion of said buried regions respectively extend to said surface beneath said apertures while the downward diffusion front remains spaced from the lower surface of the said semiconductor body, said masking material having a melting point above the temperature of said diffusion step.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said semiconductor body is a silicon body.
Claim 4
Dependent Claim
14 words
The method of claim 2 wherein said apertures are formed completely through said layer.
Claim 5
Independent Claim
151 words
A method for making a field effect transistor comprising: forming a layer of an ion beam masking material on the surface of a semiconductor body of one-type conductivity having at least two adjacent apertures with at least the portion of said masking layer between said apertures and in contact with said surface being an electrically insulative material, directing a beam of ions of opposite-type conductivity at said masked body at energy and dosage levels sufficient to form two buried regions of opposite-type conductivity fully enclosed within said one-type conductivity body respectively beneath said two apertures, and heating to diffuse said two buried regions upward until the upward diffusion of said buried regions respectively extend to said surface beneath said two apertures while the downward diffusion front remains spaced from the lower surface of the said semiconductor body, said masking material having a melting point above the temperature of said diffusion step.
Claim 6
Independent Claim
151 words
A method for making a field effect transistor comprising: forming a layer of an ion beam masking material on the surface of a semiconductor body of one-type conductivity having at least two adjacent apertures with at least the portion of said masking layer between said apertures and in contact with said surface being an electrically insulative material, directing a beam of ions of opposite-type conductivity at said masked body at energy and dosage levels sufficient to form two buried regions of opposite-type conductivity fully enclosed within said one-type conductivity body respectively beneath said two apertures, and heating to diffuse said two buried regions upward until the upward diffusion of said buried regions respectively extend to said surface beneath said two apertures while the downward diffusion front remains spaced from the lower surface of the said semiconductor body, said masking material having a melting point above the temperature of said diffusion step.
Claim 7
Dependent Claim
13 words
The method of claim 4 wherein said semiconductor body is a silicon body.
Claim 8
Dependent Claim
43 words
The method of claim 5 wherein at least the portion of the masking layer between said apertures is a composite comprising an electrically insulative layer in contact with said silicon body surface and a layer of silicon formed over said electrically insulative layer.
Claim 9
Dependent Claim
24 words
The method of claim 5 wherein at least the portion of the masking layer between said two apertures comprises a layer of silicon nitride.
Claim 10
Dependent Claim
46 words
The method of claim 5 wherein said heating is sufficient to diffuse said two buried regions until the junctions between each of the buried regions and the body respectively intersect said surface beneath the adjacent edge of said portion of said masking layer between said apertures.
Claim 11
Dependent Claim
52 words
The method of claim 5 including the further step subsequent to said heating steps of forming a layer of electrically insulative material in said apertures over the silicon surface, forming contact openings through said electrically insulative layer respectively to said two opposite-type conductivity regions, and forming conductive contacts in said contact openings.
Claim 12
Dependent Claim
13 words
The method of claim 6 wherein said electrically insulative layer comprises silicon dioxide.
Claim 13
Dependent Claim
50 words
The method of claim 8 wherein the surface concentration of said opposite-type conductivity-determining impurities in said source and drain regions in excess of the concentration of the one-type impurities determining the conductivity of the semiconductory body, said excess being no greater than three times the concentration of said one-type impurities.
Claim 14
Dependent Claim
64 words
The method of claim 9 including the further step prior to the formation of said contacts of introducing impurities of said opposite-type through said contact opening respectively into said regions to form contact regions at the surfaces of said extended buried regions, said contact regions having a surface conductivity-determining impurity concentration greater than the surface concentration of conductivity-determining impurities of said extended buried regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-12-04 | 1982-06-05 | 1982-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-12-04 | 1986-06-05 | 1986-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-12-04 | 1990-06-05 | 1990-12-05 | $7700.00 | Window Closed / Lapsed |