Patent US4127969A successfully refreshed from Google Patents.
US4127969A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a semiconductor wafer
Assignee: Sony Corp
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Filing: 1975-12-11
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Granted: 1978-12-05
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Expires: 1995-12-11
Abstract
Abstract Semiconductor wafers with apertures, that may include crystal orientation surfaces, are made by boring semiconductor ingots and slicing the bored ingots perpendicular to the bore or at an angle thereto. Novel means are provided for handling the wafers without scratching the major surfaces thereof, for supporting the slices to clean them, and for supporting the slices to coat the major surfaces.
Inventors
- 👤 Kinji Hoshi
- 👤 Kazuhiro Sugita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:46
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/14; B; B28; B28D; B28D5/00; B28D5/0058; B28D5/0082; B28D5/0088; B28D5/02; B28D5/022; B28D5/028; B28D5/04; B28D5/042; H10D; H10D62/00; H10D62/10; H10D62/117; H10D99/00; H10P50/00; H10P72/00; H10P72/04; H10P72/0428
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
114 words
The method of making a semi-conductor wafer, said method comprising the steps of: mounting on a rod a semi-conductor ingot having a longitudinal hole extending at least part way longitudinally through said ingot; temporarily adherently joining said ingot to said rod to form a unitary structure without slippage between said ingot and said rod; providing relative rotation between said unitary structure and a cutting edge to slice said ingot through to said hole from all radial directions to form a wafer having smooth surfaces, said wafer still being adherently attached to said rod after both main surfaces of said wafer have been formed by such slicing; and subsequently removing said wafer from said rod.
Claim 2
Independent Claim
114 words
The method of making a semi-conductor wafer, said method comprising the steps of: mounting on a rod a semi-conductor ingot having a longitudinal hole extending at least part way longitudinally through said ingot; temporarily adherently joining said ingot to said rod to form a unitary structure without slippage between said ingot and said rod; providing relative rotation between said unitary structure and a cutting edge to slice said ingot through to said hole from all radial directions to form a wafer having smooth surfaces, said wafer still being adherently attached to said rod after both main surfaces of said wafer have been formed by such slicing; and subsequently removing said wafer from said rod.
Claim 3
Dependent Claim
20 words
The method of claim 1 in which said hole is formed by machining a longitudinal bore entirely through said ingot.
Claim 4
Dependent Claim
20 words
The method of claim 1 in which said hold is formed in line with the central axis of said ingot.
Claim 5
Dependent Claim
30 words
The method of claim 2 in which said bore is machined to have at least one flat surface in its periphery aligned with a known crystallographic orientation of said ingot.
Claim 6
Dependent Claim
20 words
The method of claim 2 in which said hole is machined in alignment with the central axis of said ingot.
Claim 7
Dependent Claim
16 words
The method of claim 2 in which both said cutting edge and said ingot are rotated.
Claim 8
Dependent Claim
18 words
The method of claim 6 in which said cutting edge and said ingot are rotated in opposite directions.
Claim 9
Dependent Claim
33 words
The method of claim 2 in which said cutting edge is circular and is rotated on a fixed axis and said ingot is moved parallel to its own axis along a spiral path.
Claim 10
Dependent Claim
23 words
The method of claim 8 in which said axis of said cutting edge is at an angle to the axis of said ingot.
Claim 11
Dependent Claim
21 words
The method of claim 8 in which said ingot is held in a fixed orientation with respect to its own axis.
Claim 12
Dependent Claim
39 words
The method of claim 2 in which said cutting edge is circular and said ingot is mounted at an angle to the axis of said cutting edge and is rotated with respect to said axis of said cutting edge.
Claim 13
Dependent Claim
31 words
The method of claim 11 in which the axis of said ingot is at an angle to the axis of said cutting edge and intersects said axis of said cutting edge.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-12-04 | 1982-06-05 | 1982-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-12-04 | 1986-06-05 | 1986-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-12-04 | 1990-06-05 | 1990-12-05 | $7700.00 | Window Closed / Lapsed |