Patent US4127861A successfully refreshed from Google Patents.
US4127861A
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Metal base transistor with thin film amorphous semiconductors
Assignee: International Business Machines Corp
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Filing: 1977-09-26
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Granted: 1978-11-28
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Expires: 1997-09-26
Abstract
Abstract A transistor having a continuously variable modulation characteristic is provided by a structure of two semiconductive films with at least one of them composed of amorphous material sandwiching a thin metallic film base. The transfer characteristics of the device are continuous rather than bistable. When both semiconductive films are amorphous, the transistor can be deposited upon inexpensive crystalline or noncrystalline substrates.
Inventors
- 👤 Alain F. G. Deneuville
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:05
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D48/362; H10D62/40; H10D62/402
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
111 words
A thin film transistor including a first semiconductor member having a monostable conductance characteristic and a first electrode electrically connected thereto by an ohmic contact material, a transistor base comprising a thin film of a metal bonded to said first semiconductor member and connected to a second electrode, an amorphous thin film layer composed of an amorphous semiconductor material having a monostable conductance characteristic and bonded to said base, a second ohmic contact material secured to said amorphous thin film layer, an electrode connected to said amorphous thin film layer by means of said second ohmic contact material, and said first member, said base and said amorphous layer forming a sandwich.
Claim 2
Dependent Claim
111 words
A thin film transistor including a first semiconductor member having a monostable conductance characteristic and a first electrode electrically connected thereto by an ohmic contact material, a transistor base comprising a thin film of a metal bonded to said first semiconductor member and connected to a second electrode, an amorphous thin film layer composed of an amorphous semiconductor material having a monostable conductance characteristic and bonded to said base, a second ohmic contact material secured to said amorphous thin film layer, an electrode connected to said amorphous thin film layer by means of said second ohmic contact material, and said first member, said base and said amorphous layer forming a sandwich.
Claim 3
Dependent Claim
17 words
A transistor in accordance with claim 1 wherein said first semiconductor member is a crystalline semiconductor body.
Claim 4
Dependent Claim
21 words
A transistor in accordance with claim 1 wherein said first semiconductor body is a thin amorphous film deposited upon a substrate.
Claim 5
Dependent Claim
168 words
A thin film transistor including an insulating substrate having secured by deposition thereon, in stacked relationship, a first layer of an ohmic material deposited upon said substrate, a first electrode, said first electrode and said first layer of ohmic material being electrically connected together, a first amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic bonded to said first layer, a thin film of metal bonded to said first amorphous thin film layer connected to a second electrode, a second amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic bonded to said thin film of metal, a second layer of ohmic material bonded to said second amorphous thin film layer and connected to a third electrode, whereby said transistor is adapted to have a continuously variable state and a continuously variable response characteristic as a function of input signals applied to the base and another one of the collector and emitter electrodes when connected in an electronic circuit.
Claim 6
Dependent Claim
168 words
A thin film transistor including an insulating substrate having secured by deposition thereon, in stacked relationship, a first layer of an ohmic material deposited upon said substrate, a first electrode, said first electrode and said first layer of ohmic material being electrically connected together, a first amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic bonded to said first layer, a thin film of metal bonded to said first amorphous thin film layer connected to a second electrode, a second amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic bonded to said thin film of metal, a second layer of ohmic material bonded to said second amorphous thin film layer and connected to a third electrode, whereby said transistor is adapted to have a continuously variable state and a continuously variable response characteristic as a function of input signals applied to the base and another one of the collector and emitter electrodes when connected in an electronic circuit.
Claim 7
Dependent Claim
14 words
A transistor in accordance with claim 4 wherein said transistor is a barrier device.
Claim 8
Dependent Claim
15 words
A transistor in accordance with claim 4 wherein said amorphous material comprises amorphous hydrogenated-silicon (a-Si:H).
Claim 9
Dependent Claim
191 words
A thin film transistor including an insulating substrate, an emitter, a base, a collector and first and second layers of ohmic material and three electrodes including a first electrode, a second electrode and a third electrode, said first electrode and said first layer of ohmic material being deposited upon said substrate and said first layer of ohmic material and said first electrode being electrically connected together, said collector comprising a first amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic deposited upon said first layer of ohmic material, said base comprising a thin film of metal deposited upon said collector, said base being electrically connected to said electrode, said emitter comprising a second amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic deposited upon said base, said second layer of ohmic material being deposited upon said emitter connected to a third electrode, whereby said collector, base, emitter combination is adapted to have a continuously variable state and a continuously variable response characteristic as a function of input signals applied to the base and another one of the collector and emitter electrodes.
Claim 10
Dependent Claim
191 words
A thin film transistor including an insulating substrate, an emitter, a base, a collector and first and second layers of ohmic material and three electrodes including a first electrode, a second electrode and a third electrode, said first electrode and said first layer of ohmic material being deposited upon said substrate and said first layer of ohmic material and said first electrode being electrically connected together, said collector comprising a first amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic deposited upon said first layer of ohmic material, said base comprising a thin film of metal deposited upon said collector, said base being electrically connected to said electrode, said emitter comprising a second amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic deposited upon said base, said second layer of ohmic material being deposited upon said emitter connected to a third electrode, whereby said collector, base, emitter combination is adapted to have a continuously variable state and a continuously variable response characteristic as a function of input signals applied to the base and another one of the collector and emitter electrodes.
Claim 11
Dependent Claim
14 words
A transistor in accordance with claim 7 wherein said transistor is a barrier device.
Claim 12
Dependent Claim
15 words
A transistor in accordance with claim 7 wherein said amorphous material comprises amorphous hydrogenated-silicon (a-Si:H).
Claim 13
Dependent Claim
195 words
A thin film transistor including an insulating substrate, with remaining elements of said transistor deposited upon said substrate, said transistor including an emitter, a base layer, a collector layer and first and second layers of ohmic material and three electrodes including a first electrode, a second electrode, and a third electrode. said first layer of ohmic material being deposited upon said substrate, said first electrode and said first layer of ohmic material being electrically connected together, an emitter comprising a first amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic deposited upon said first layer, a base comprising a thin film of metal deposited upon said emitter, said base being connected to said second electrode, a collector comprising a second amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic deposited upon said base, a second layer of ohmic material being deposited upon said collector connected to a third electrode, whereby said collector, base, emitter combination has a continuously variable state and a continuously variable response characteristic as a function of input signals applied to the base and another one of the collector and emitter electrodes.
Claim 14
Dependent Claim
195 words
A thin film transistor including an insulating substrate, with remaining elements of said transistor deposited upon said substrate, said transistor including an emitter, a base layer, a collector layer and first and second layers of ohmic material and three electrodes including a first electrode, a second electrode, and a third electrode. said first layer of ohmic material being deposited upon said substrate, said first electrode and said first layer of ohmic material being electrically connected together, an emitter comprising a first amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic deposited upon said first layer, a base comprising a thin film of metal deposited upon said emitter, said base being connected to said second electrode, a collector comprising a second amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic deposited upon said base, a second layer of ohmic material being deposited upon said collector connected to a third electrode, whereby said collector, base, emitter combination has a continuously variable state and a continuously variable response characteristic as a function of input signals applied to the base and another one of the collector and emitter electrodes.
Claim 15
Dependent Claim
14 words
A transistor in accordance with claim 10 wherein said transistor is a barrier device.
Claim 16
Dependent Claim
15 words
A transistor in accordance with claim 10 wherein said amorphous material comprises amorphous hydrogenated-silicon (a-Si:H).
Claim 17
Dependent Claim
181 words
A thin film transistor including an insulating substrate having secured by deposition thereon, in stacked relationship an emitter layer, a base layer, a collector layer and first and second layers of ohmic material and three electrodes including a first electrode, a second electrode, and a third electrode, said first electrode and said first layer of an ohmic material being electrically connected together, said collector comprising a first amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic bonded to said first layer, said base comprising a thin metallic film bonded to said collector, said thin metallic film being connected to said second electrode, said emitter comprising a second amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic bonded to said base, a second layer of ohmic material bonded to said emitter connected to a third electrode, whereby said collector, base, emitter combination has a continuously variable state and a continuously variable response characteristic as a function of input signals applied to the base and another one of the collector and emitter electrodes.
Claim 18
Dependent Claim
181 words
A thin film transistor including an insulating substrate having secured by deposition thereon, in stacked relationship an emitter layer, a base layer, a collector layer and first and second layers of ohmic material and three electrodes including a first electrode, a second electrode, and a third electrode, said first electrode and said first layer of an ohmic material being electrically connected together, said collector comprising a first amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic bonded to said first layer, said base comprising a thin metallic film bonded to said collector, said thin metallic film being connected to said second electrode, said emitter comprising a second amorphous thin film layer composed of an amorphous material having a monostable conductance characteristic bonded to said base, a second layer of ohmic material bonded to said emitter connected to a third electrode, whereby said collector, base, emitter combination has a continuously variable state and a continuously variable response characteristic as a function of input signals applied to the base and another one of the collector and emitter electrodes.
Claim 19
Dependent Claim
14 words
A transistor in accordance with claim 13 wherein said transistor is a barrier device.
Claim 20
Dependent Claim
15 words
A transistor in accordance with claim 13 wherein said amorphous material comprises amorphous hydrogenated-silicon (a-Si:H).
References Cited (Backward Citations)
US4064521A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-27 | 1982-05-29 | 1982-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-27 | 1986-05-29 | 1986-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-27 | 1990-05-29 | 1990-11-28 | $7700.00 | Window Closed / Lapsed |