US4126930A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Magnesium doping of AlGaAs
Assignee: Varian Medical Systems Inc
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Filing: 1977-11-07
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Granted: 1978-11-28
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Expires: 1997-11-07
Abstract
Abstract Aluminum gallium arsenide is used as a transparent, conducting contact layer on the exposed surface of a gallium arsenide photovoltaic cell. Increased conductivity for the high current generated when concentrated solar radiation strikes the cell, is provided by doping the AlGaAs layer with magnesium. During the formation of the layer, Mg diffuses into the gallium arsenide to form a p-type layer and a p-n junction.
Inventors
- 👤 Ronald L. Moon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:18
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/144; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1243; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3444; H10P32/00; H10P32/10; H10P32/15; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S438/00; Y10S438/912
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
66 words
A process for making a photovoltaic cell comprising the steps of: epitaxially growing on an n-type semiconductive body a contact layer of aluminum gallium arsenide doped with magnesium, heating said layer and said semiconductor to diffuse magnesium dopant into said semiconductor to form a p-type layer adjacent said contact layer, and attaching a first electrode to said contact layer and a second electrode to said semiconductor.
Claim 2
Dependent Claim
66 words
A process for making a photovoltaic cell comprising the steps of: epitaxially growing on an n-type semiconductive body a contact layer of aluminum gallium arsenide doped with magnesium, heating said layer and said semiconductor to diffuse magnesium dopant into said semiconductor to form a p-type layer adjacent said contact layer, and attaching a first electrode to said contact layer and a second electrode to said semiconductor.
Claim 3
Dependent Claim
19 words
The process of claim 1 further including the step of epitaxially growing said semiconductive body on a semiconductive substrate.
Claim 4
Dependent Claim
27 words
The process of claim 2 wherein said electrodes are attached to the surfaces of said contact layer and said substrate respectively on sides opposite said semiconductive body.
Claim 5
Dependent Claim
32 words
The process of claim 1 wherein said semiconductive body is a compound of one or more elements of column III of the Periodic Table with one or more elements of column V.
Claim 6
Dependent Claim
12 words
The process of claim 4 wherein said semiconductive body is gallium arsenide.
Claim 7
Dependent Claim
14 words
The process of claim 1 wherein said epitaxial growth and said diffusion occur simultaneously.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-27 | 1982-05-29 | 1982-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-27 | 1986-05-29 | 1986-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-27 | 1990-05-29 | 1990-11-28 | $7700.00 | Window Closed / Lapsed |