US4126713A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Forming films on semiconductor surfaces with metal-silica solution
Assignee: Optron Inc
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Filing: 1976-11-15
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Granted: 1978-11-21
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Expires: 1996-11-15
Abstract
Abstract An improved method for forming a metal-silica coating solution having particular utility in the formation of metal-organo-silicate films on semiconductor surfaces is disclosed. The method comprises the steps of forming a mixture of a first solution having a metal salt and a cross-linking agent dissolved therein and a second solution having an organo-silicate dissolved therein, and aging the mixture a predetermined length of time. This mixture can then be applied to the semiconductor surface where cross-linking takes place such that a viable film is formed. Further heating of the semi-conductor device causes a metal film to be formed which is in turn diffused into the semiconductor device. By the use of the metal-silica solution, an improved method for diffusing metal atoms into silicon for lifetime control is achieved.
Inventors
- 👤 Raymond DiBugnara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 03:30
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/19; C; C30; C30B; C30B31/00; C30B31/02; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
91 words
A method for forming a cross-linked film of a metal chloro-silicate on a semiconductor surface comprising the steps of: a. forming a mixture of i. an alcohol solution of a metal chloride salt and a cross-linking agent for tetra-ethyl-ortho-silicate; and ii. an alcohol solution of tetra-ethyl-ortho-silicate; b. aging said mixture a predetermined length of of time so as to permit said tetra-ethyl-ortho-silicate to partially cross-link; c. coating said surface with said mixture; and d. drying said mixture so as to form said cross-linked film of said metal chloro-silicate on said surface.
Claim 2
Independent Claim
91 words
A method for forming a cross-linked film of a metal chloro-silicate on a semiconductor surface comprising the steps of: a. forming a mixture of i. an alcohol solution of a metal chloride salt and a cross-linking agent for tetra-ethyl-ortho-silicate; and ii. an alcohol solution of tetra-ethyl-ortho-silicate; b. aging said mixture a predetermined length of of time so as to permit said tetra-ethyl-ortho-silicate to partially cross-link; c. coating said surface with said mixture; and d. drying said mixture so as to form said cross-linked film of said metal chloro-silicate on said surface.
Claim 3
Dependent Claim
33 words
The method for forming a film of metal chloro-silicate on a semiconductor surface of claim 1 wherein said metal chloride salt is selected from the group consisting of gold chloride and platinum chloride.
Claim 4
Dependent Claim
28 words
The method for forming a film of a metal chloro-silicate on a semiconductor surface of claim 1 wherein said mixture is aged a minimum of approximately two hours.
Claim 5
Dependent Claim
48 words
The method for forming a film of a metal chloro-silicate on a semiconductor surface of claim 1 wherein said film produced in step (d) is heat treated at a temperature sufficient to create free metal atoms and to drive said metal atoms into said semi-conductor a predetermined distance.
Claim 6
Dependent Claim
36 words
The method of forming a film of metal chloro-silicate of claim 1 wherein said mixture formed in step (a) is formed by mixing approximately equal volumes of said alcohol solutions set forth in (i) and (ii).
Claim 7
Independent Claim
88 words
A method for forming a cross-linked film of a gold chloro-silicate on a semiconductor surface comprising the steps of: a. forming a mixture of: i. a first solution comprising a solvent and gold chloride dissolved therein and a cross-linking agent for tetra-ethyl-ortho-silicate; and ii. a second solution comprising a solvent and tetra-ethyl-ortho-silicate: b. aging said mixture a minimum of approximately 2 hours; c. coating said surface with said mixture; and d. removing said alcohol so as to form said cross-linked film of said gold chloro-silicate on said surface.
Claim 8
Independent Claim
88 words
A method for forming a cross-linked film of a gold chloro-silicate on a semiconductor surface comprising the steps of: a. forming a mixture of: i. a first solution comprising a solvent and gold chloride dissolved therein and a cross-linking agent for tetra-ethyl-ortho-silicate; and ii. a second solution comprising a solvent and tetra-ethyl-ortho-silicate: b. aging said mixture a minimum of approximately 2 hours; c. coating said surface with said mixture; and d. removing said alcohol so as to form said cross-linked film of said gold chloro-silicate on said surface.
Claim 9
Dependent Claim
31 words
The method for forming a film of gold chloro-silicate on a semiconductor surface of claim 6 wherein said first and second alcohol solutions are mixed in approximately equal amounts by volume.
Claim 10
Dependent Claim
35 words
The method for forming a film of a gold chloro-silicate on a semiconductor surface of claim 6 wherein said solvent of said first solution is a mixture of ethyl alcohol, methyl alcohol and isopropyl alcohol.
Claim 11
Dependent Claim
33 words
The method for forming a film of a gold chloro-silicate on a semiconductor surface of claim 8 wherein said solvent of said second solution is a mixture of ethyl alcohol and isopropyl alcohol.
Claim 12
Dependent Claim
24 words
The method for forming a film of a gold chloro-silicate on a semiconductor surface of claim 6 wherein said cross-linking agent is hydrochloric acid.
Claim 13
Dependent Claim
30 words
The method for forming a cross-linked film of a gold chloro-silicate on a semiconductor surface of claim 6 wherein said alcohol is removed in step (d) by room temperature drying.
Claim 14
Dependent Claim
48 words
The method for forming a film of a gold chloro-silicate on a semiconductor surface of claim 6 where said film produced in step (d) is heat treated at a temperature sufficient to create free gold atoms and to drive said gold atoms into said semiconductor a predetermined distance.
Claim 15
Independent Claim
88 words
A method for forming a cross-linked film of a platinum chloro-silicate on a semiconductor surface comprising the steps of: a. forming a mixture of: i. a first solution comprising a solvent and platinum chloride dissolved therein and a cross-linking agent for tetra-ethyl-ortho-silicate; and ii. a second solution comprising a solvent and tetra-ethyl-ortho-silicate: b. aging said mixture a minimum of approximately two hours; c. coating said surface wth said mixture; and d. removing said alcohol so as to form said cross-linked film of said platinum chloro-silicate on said surface.
Claim 16
Independent Claim
88 words
A method for forming a cross-linked film of a platinum chloro-silicate on a semiconductor surface comprising the steps of: a. forming a mixture of: i. a first solution comprising a solvent and platinum chloride dissolved therein and a cross-linking agent for tetra-ethyl-ortho-silicate; and ii. a second solution comprising a solvent and tetra-ethyl-ortho-silicate: b. aging said mixture a minimum of approximately two hours; c. coating said surface wth said mixture; and d. removing said alcohol so as to form said cross-linked film of said platinum chloro-silicate on said surface.
Claim 17
Dependent Claim
31 words
The method for forming a film of platinum chloro-silicate on a semiconductor surface of claim 13 wherein said first and second alcohol solutions are mixed in approximately equal amounts by volume.
Claim 18
Dependent Claim
24 words
The method for forming a film of a platinum chloro-silicate on a semiconductor surface of claim 13 where said cross-linking agent is hydrochloric acid.
Claim 19
Dependent Claim
29 words
The method for forming a film of a platinum chloro-silicate on a semiconductor surface of claim 13 wherein said alcohol is removed in step (d) by room temperature drying.
Claim 20
Dependent Claim
44 words
The method for forming a film of a platinum chloro-silicate of claim 13 wherein said film produced in step (d) is heat treated at a temperature sufficient to create free platinum atoms and to drive said platinum atoms into said semiconductor a predetermined distance.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-20 | 1982-05-22 | 1982-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-20 | 1986-05-22 | 1986-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-20 | 1990-05-22 | 1990-11-21 | $7700.00 | Window Closed / Lapsed |