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US4126523A
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Method and means for electrolytic precleaning of substrates and the electrodeposition of aluminum on said substrates
Assignee: Alumatec Inc
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Filing: 1977-04-29
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Granted: 1978-11-21
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Expires: 1997-04-29
Abstract
Abstract Adherent deposits of aluminum can be obtained on metallic substrates by anodic etching of the substrates (reverse current electrolytic cleaning) employing a novel etch solution made as follows: 1. reacting a sufficient amount of aluminum with a hydrogen halide such as HCl, HBr, or HI (preferably hydrogen bromide) in an organic solvent such as benzene or toluene (and in the absence of water) to form a solution in which the concentration of the dissolved aluminum is from 2.0 M to 3.5 M; and 2. then adding hydrogen halide to the resulting solution of 1) above such that the hydrogen ion concentration of the said resulting solution is greater than 1.0 M but below the saturation point of hydrogen halide in said solution. Prior to the actual plating operation, the novel etch solution just described is directed to a plating chamber wherein the metallic substrate is electrocleaned by reverse current anodic etching, i.e., the substrate becomes the anodic terminal of the cell, the reverse of its electric potential in normal electroplating. Then the electroplating electrolyte is directed to the plating chamber to flush out the etch solution. Finally, fresh electroplating electrolyte is directed to the plating chamber for electroplating of the substrate, which is now rendered cathodic.
Inventors
- 👤 Jack Y. Wong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:45
CPC Classifications
C; C25; C25D; C25D3/00; C25D3/02; C25D3/42; C25D3/44
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
103 words
An anhydrous etch solution, which consists essentially of: an organic solvent selected from the group consisting of benzene, toluene, carbon disulfide, cyclohexane, dimethyl sulfide, tetrahydrofuran, diiodoethane, toluenecyclohexane (1:1), benzene-cyclohexane (1:1), tetrahydrofuran (THF): benzene (4:1) and toluene-CS 2 (3:1); an aluminum halide present in said solution in an amount such that the aluminum cation concentration of said solution lies above about 2.0 molar but below about 3.5 molar; and a hydrogen halide present in said solution in an amount such that the [H + ] concentration of said solution lies above about 1.0 molar but below the hydrogen halide saturation point of said solution.
Claim 2
Dependent Claim
103 words
An anhydrous etch solution, which consists essentially of: an organic solvent selected from the group consisting of benzene, toluene, carbon disulfide, cyclohexane, dimethyl sulfide, tetrahydrofuran, diiodoethane, toluenecyclohexane (1:1), benzene-cyclohexane (1:1), tetrahydrofuran (THF): benzene (4:1) and toluene-CS 2 (3:1); an aluminum halide present in said solution in an amount such that the aluminum cation concentration of said solution lies above about 2.0 molar but below about 3.5 molar; and a hydrogen halide present in said solution in an amount such that the [H + ] concentration of said solution lies above about 1.0 molar but below the hydrogen halide saturation point of said solution.
Claim 3
Independent Claim
130 words
A method for making an anhydrous etch solution, which consists essentially of: reacting aluminum with a hydrogen halide selected from the group consisting of hydrogen chloride, hydrogen bromide and hydrogen iodide in the presence of an organic solvent selected from the group consisting of benzene, toluene, carbon disulfide, cyclohexane, dimethyl sulfide, tetrahydrofuran, diiodoethane, toluene-cyclohexane (1:1), tetrahydrofuran (THF): benzene (4:1) and toluene-CS 2 (3:1) and in the absence of water, to form an intermediate solution in which the concentration of aluminum cation is from about 2.0 molar to about 3.5 molar; and adding to said intermediate solution sufficient hydrogen halide to form an anhydrous etch solution in which the hydrogen ion concentration lies above about 1.0M but the hydrogen halide level is below the saturation point of said anhydrous etch solution.
Claim 4
Independent Claim
130 words
A method for making an anhydrous etch solution, which consists essentially of: reacting aluminum with a hydrogen halide selected from the group consisting of hydrogen chloride, hydrogen bromide and hydrogen iodide in the presence of an organic solvent selected from the group consisting of benzene, toluene, carbon disulfide, cyclohexane, dimethyl sulfide, tetrahydrofuran, diiodoethane, toluene-cyclohexane (1:1), tetrahydrofuran (THF): benzene (4:1) and toluene-CS 2 (3:1) and in the absence of water, to form an intermediate solution in which the concentration of aluminum cation is from about 2.0 molar to about 3.5 molar; and adding to said intermediate solution sufficient hydrogen halide to form an anhydrous etch solution in which the hydrogen ion concentration lies above about 1.0M but the hydrogen halide level is below the saturation point of said anhydrous etch solution.
Claim 5
Dependent Claim
10 words
The anhydrous solution formed by the method of claim 2.
Claim 6
Dependent Claim
63 words
A method for precleaning a metallic substrate which comprises: applying an electrical potential of the order of several volts to said metallic substrate to render said substrate anodic with respect to a cathodic terminal in a precleaning zone, in the presence of an anhydrous etch solution of claim 1; and pre-cleaning said substrate while maintaining the polarity of said substrate as an anode.
Claim 7
Dependent Claim
55 words
A method for precleaning metallic substrates which comprises: applying an electrical potential to said substrate to render said substrate anodic with respect to a cathodic element in a precleaning zone in the presence of an anhydrous etch solution of claim 3; and pre-cleaning said substrate while maintaining the polarity of said substrate as an anode.
Claim 8
Dependent Claim
128 words
A method for precleaning a metallic substrate and electroplating same with aluminum which comprises: applying an electrical potential of the order of several volts of said substrate to render said substrate anodic with respect to an element, rendered cathodic in a precleaning zone in the presence of an anhydrous etch solution as defined in claim 1: withdrawing said anhydrous etch solution from said precleaning zone after a predetermined period of time; adding electroplating solution containing a plating aluminum cationic species to said precleaning zone; reversing the polarity of said substrate and cathodic elements from its polarity during said precleaning; and electroplating aluminum onto said substrate in the presence of said electroplating solution while maintaining the polarity of said substrate as a cathode and said element as an anode.
Claim 9
Dependent Claim
151 words
A method for precleaning a metallic substrate and electroplating same with aluminum which comprises: applying an electrical potential of the order of several volts to said substrate to render said substrate anodic with respect to an element, rendered cathodic, in a precleaning zone in the presence of an anhydrous etch solution as defined in claim 1; withdrawing said anhydrous etch solution from said precleaning zone after a predetermined period of time; flushing said precleaning zone with an electroplating solution containing a plating aluminum cationic species prior to electroplating of aluminum onto said substrate; adding fresh electroplating solution containing a plating aluminum cationic species to said precleaning zone; reversing the polarity of said substrate and cathodic elements from its polarity during said precleaning; and electroplating aluminum onto said substrate in the presence of said electroplating solution while maintaining the polarity of said substrate as a cathode and said element as an anode.
Claim 10
Dependent Claim
151 words
A method for precleaning a metallic substrate and electroplating same with aluminum which comprises: applying an electrical potential of the order of several volts to said substrate to render said substrate anodic with respect to an element, rendered cathodic, in a precleaning zone in the presence of an anhydrous etch solution as defined in claim 3; withdrawing said anhydrous etch solution from said precleaning zone after a predetermined period of time; flushing said precleaning zone with an electroplating solution containing a plating aluminum cationic species prior to electroplating of aluminum onto said substrate; adding fresh electroplating solution containing a plating aluminum cationic species to said precleaning zone; reversing the polarity of said substrate and cathodic elements from its polarity during said precleaning; and electroplating aluminum onto said substrate in the presence of said electroplating solution while maintaining the polarity of said substrate as a cathode and said element as an anode.
Claim 11
Dependent Claim
23 words
The method of claim 6 wherein said solvent in said anhydrous etch solution and the solvent of said electroplating solution are the same.
Claim 12
Dependent Claim
23 words
The method of claim 6 wherein said halide of said anhydrous etch solution and the halide of said electroplating solution are the same.
Claim 13
Dependent Claim
23 words
The method of claim 7 wherein said solvent in said anhydrous etch solution and the solvent of said electroplating solution are the same.
Claim 14
Dependent Claim
23 words
The method of claim 7 wherein said halide of said anhydrous etch solution and the halide of said electroplating solution are the same.
Claim 15
Dependent Claim
135 words
The method of claim 7 wherein said electroplating solution is made by: reacting a given quantity of aluminum, in the presence of an organic, substantially anhydrous, non-Lewis base solvent, with i. a member of the group consisting essentially of a halogen and a hydrogen halide in a quantity in excess of that required to produce an aluminum halide but below that required to produce a hydrogen ion concentration of less than about 0.5 molor, and with ii. about 0.5-20 mole % metallic halide, based on the initial mole quantity of said aluminum, said metallic halide being selected from the group consisting of the halides of Lithium, Sodium, Potassium, Beryllium, Magnesium and the Ammonium ion, to form a plating solution containing an aluminum cationic plating species having an aluminum ion molarity of below about 7.5 molar.
Claim 16
Dependent Claim
84 words
A method for precleaning a metallic substrate and electroplating same with aluminum which comprises: applying an electrical potential of the order of several volts to said substrate to render said substrate anodic with respect to an element, rendered cathodic, in a precleaning zone in the presence of an anhydrous etch solution as defined in claim 1; and electroplating aluminum onto said substrate in the presence of electroplating solution while maintaining the polarity of said substrate as a cathode and said element as an anode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-11-20 | 1982-05-22 | 1982-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-11-20 | 1986-05-22 | 1986-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-11-20 | 1990-05-22 | 1990-11-21 | $7700.00 | Window Closed / Lapsed |