Patent US4121183A successfully refreshed from Google Patents.
US4121183A
Expired / Lapsed
US
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Programmable attenuator apparatus employing active FET switching
Assignee: Tektronix Inc
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Filing: 1976-10-29
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Granted: 1978-10-17
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Expires: 1996-10-29
Abstract
Abstract A high-impedance programmable attenuator utilizing field-effect transistor (FET) switching in both the high-impedance and low-impedance sections. In the high-impedance section, hybrid passive attenuator elements are employed to provide attenuation of electrical signals, and both series and shunt forms of active switching are employed to align the appropriate signal paths. The low-impedance amplifier section includes a FET-switched resistive network.
Inventors
- 👤 Desmond Lewis Murphy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 11:28
CPC Classifications
H; H03; H03G; H03G1/00; H03G1/0005; H03G1/0035; H03G1/007; H03G3/00; H03G3/001; H03H; H03H11/00; H03H11/02; H03H11/24; H03H7/00; H03H7/24
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
142 words
An attenuator apparatus, comprising: an input terminal and an output terminal; a high-impedance attenuator section and a low-impedance attenuator section serially disposed between said input terminal and said output terminal, said attenuator sections including impedance means; a buffer amplifier interposed between said high-impedance attenuator section and said low-impedance attenuator section; and programmable switch means including a plurality of field-effect transistors for selecting said impedance means to provide selectable attenuator networks having predetermined attenuation values; said high-impedance attenuator section including a hybrid attenuator device having a predetermined attenuation value serially disposed between a pair of field-effect transistors, said high-impedance attenuator section further including a bypass field-effect transistor in parallel with the serial combination of said hybrid attenuator device and said pair of field-effect transistors, said field-effect transistors being adapted to be selectively switched on and off to provide a selectable signal path therethrough.
Claim 2
Dependent Claim
142 words
An attenuator apparatus, comprising: an input terminal and an output terminal; a high-impedance attenuator section and a low-impedance attenuator section serially disposed between said input terminal and said output terminal, said attenuator sections including impedance means; a buffer amplifier interposed between said high-impedance attenuator section and said low-impedance attenuator section; and programmable switch means including a plurality of field-effect transistors for selecting said impedance means to provide selectable attenuator networks having predetermined attenuation values; said high-impedance attenuator section including a hybrid attenuator device having a predetermined attenuation value serially disposed between a pair of field-effect transistors, said high-impedance attenuator section further including a bypass field-effect transistor in parallel with the serial combination of said hybrid attenuator device and said pair of field-effect transistors, said field-effect transistors being adapted to be selectively switched on and off to provide a selectable signal path therethrough.
Claim 3
Dependent Claim
96 words
An attenuator apparatus in accordance with claim 1 wherein said low-impedance attenuator section includes first resistor means and second resistor means each having one end thereof connected to said output terminal, the opposite ends of which are adapted to be selectively connected to the output of said buffer amplifier and to ground through said switch means, so that a voltage divider is formed wherein one of said resistor means is in series with a signal path between said buffer amplifier and said output terminal, and the other resistor means is in shunt with said signal path.
Claim 4
Dependent Claim
28 words
An attenuator apparatus in accordance with claim 2 wherein said first and second resistor means are of different resistance values so that two attenuation ratios are provided thereby.
Claim 5
Dependent Claim
31 words
An attenuator apparatus in accordance with claim 2 wherein said low-impedance attenuator section further includes third resistor means coupled between said output terminal and ground to provide predetermined voltage divider ratios.
Claim 6
Dependent Claim
33 words
An attenuator apparatus in accordance with claim 4 wherein said low-impedance attenuator section further includes a field-effect transistor in series with said third resistor means to provide temperature compensation for said switch means.
Claim 7
Dependent Claim
23 words
An attenuator apparatus in accordance with claim 1 further including programming means for providing switch control signals in accordance with predetermined attenuation ratios.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-10-16 | 1982-04-17 | 1982-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-10-16 | 1986-04-17 | 1986-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-10-16 | 1990-04-17 | 1990-10-17 | $7700.00 | Window Closed / Lapsed |