Patent US4119992A successfully refreshed from Google Patents.
US4119992A
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Integrated circuit structure and method for making same
Assignee: RCA Corp
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Filing: 1977-04-28
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Granted: 1978-10-10
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Expires: 1997-04-28
Abstract
Abstract The integrated circuit is manufactured upside down relative to conventional silicon-on-sapphire (SOS) processing techniques for manufacturing field effect transistors. First a conductive pattern, typically of a refractory metal, is deposited and defined on an insulating substrate, such as sapphire, and then silicon transistors are formed over the conductive pattern. Using the process, a masking step, namely the contact definition mask, used in conventional SOS manufacture, is eliminated.
Inventors
- 👤 Alfred Charles Ipri
- 👤 Joseph Hurlong Scott, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 08:46
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6758; H10D30/6759; H10D30/6704; H10D30/6713; H10D86/00; H10D86/01; H10D86/03; H10P; H10P14/00; H10P14/40; H10P14/412; H10W; H10W20/00; H10W20/01; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/692; H10P14/20; H10P14/24; H10P14/27; H10P14/29; H10P14/2901; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3241; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
164 words
An integrated circuit structure comprising: (a) a body of insulating material having a surface on which a single crystal semiconductor material may be epitaxially grown; (b) at least one pair of spaced conductors on the surface of said body; and (c) at least one semiconductor device formed of a single crystal semiconductor material epitaxially grown on said insulating material comprising: (i) a pair of spaced semiconductor regions having a first conductivity type formed on the surface of said body, one of said spaced semiconductor regions at least partially overlying one of said pair of spaced conductors and the other of said spaced semiconductor regions at least partially overlying the other of said pair of spaced conductors; (ii) a channel region comprising a single crystal semiconductor region lying between and adjacent to each of said spaced semiconductor regions, said channel region overlying said surface of said body; (iii) an insulating region overlying said channel region; and (iv) a conductive gate region overlying said insulating region.
Claim 2
Dependent Claim
164 words
An integrated circuit structure comprising: (a) a body of insulating material having a surface on which a single crystal semiconductor material may be epitaxially grown; (b) at least one pair of spaced conductors on the surface of said body; and (c) at least one semiconductor device formed of a single crystal semiconductor material epitaxially grown on said insulating material comprising: (i) a pair of spaced semiconductor regions having a first conductivity type formed on the surface of said body, one of said spaced semiconductor regions at least partially overlying one of said pair of spaced conductors and the other of said spaced semiconductor regions at least partially overlying the other of said pair of spaced conductors; (ii) a channel region comprising a single crystal semiconductor region lying between and adjacent to each of said spaced semiconductor regions, said channel region overlying said surface of said body; (iii) an insulating region overlying said channel region; and (iv) a conductive gate region overlying said insulating region.
Claim 3
Dependent Claim
23 words
The integrated circuit structure of claim 1 wherein said channel region is of opposite conductivity type to said pair of spaced semiconductor regions.
Claim 4
Dependent Claim
30 words
The integrated circuit structure of claim 1 wherein said channel region is of the same conductivity type as said pair of spaced semiconductor regions but has a lower impurity concentration.
Claim 5
Dependent Claim
18 words
The integrated circuit structure of claim 1 wherein said pair of spaced conductors are comprised of a metal.
Claim 6
Dependent Claim
23 words
The integrated circuit structure of claim 4 wherein said metal is a refractory metal and has a melting point greater than 1000° C.
Claim 7
Dependent Claim
18 words
The integrated circuit structure of claim 1 wherein said gate region is comprised of a conductive semiconductive material.
Claim 8
Dependent Claim
16 words
The integrated circuit structure of claim 6 wherein said gate region is comprised of polycrystalline silicon.
Claim 9
Dependent Claim
21 words
The integrated circuit structure of claim 1 which further comprises at least one additional conductor on the surface of said body.
Claim 10
Dependent Claim
24 words
The integrated circuit structure of claim 8 further comprising an insulating layer overlying said additional conductor and another conductive layer overlying said insulating layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-10-09 | 1982-04-10 | 1982-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-10-09 | 1986-04-10 | 1986-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-10-09 | 1990-04-10 | 1990-10-10 | $7700.00 | Window Closed / Lapsed |