Patent US4119744A successfully refreshed from Google Patents.
US4119744A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate
Assignee: US Philips Corp
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Filing: 1977-07-18
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Granted: 1978-10-10
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Expires: 1997-07-18
Abstract
Abstract A method of manufacturing semiconductor devices comprising a layer of semiconductor material, comprising the steps of providing a strip-shaped solid substrate having a main surface and providing a solid support having a substantially horizontal surface and comprising a substantially floating liquid mass of such semiconductor material on the substantially horizontal surface, the main surface being wettable by the liquid semiconductor material. The liquid mass is contacted with the main surface of said substrate, onto which substrate the layer of semiconductor material is to be provided, the substrate is moved in its longitudinal direction along and in contact with said liquid mass so that a liquid layer of said semiconductor material is formed on said strip and taken along with it, and the liquid layer is substantially progressively solidified.
Inventors
- 👤 Jean-Jacques Lucien Emile Brissot
- 👤 Christian Belouet
- 👤 Rene Martres
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:21
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C01; C01B; C01B33/00; C01B33/02; C30B13/00; C30B15/00; C30B15/007; C30B29/60; H; H10; H10F; H10F71/00; H10F71/121; H10F71/1221; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
129 words
A method of manufacturing semiconductor devices comprising a layer of semiconductor material, comprising the steps of: (a) providing a strip-shaped solid substrate having a main surface, (b) providing a solid support having a substantially horizontal surface and comprising a substantially floating liquid mass of said semiconductor material on said substantially horizontal surface, said main surface being wettable by said liquid semiconductor material, (c) contacting said liquid mass with said main surface of said substrate, onto which substrate the layer of semiconductor material is to be provided, (d) moving said substrate in its longitudinal direction along and in contact with said liquid mass so that a liquid layer of said semiconductor material is formed on said substrate and taken along with it, and (e) substantially progressively solidifying said liquid layer.
Claim 2
Independent Claim
129 words
A method of manufacturing semiconductor devices comprising a layer of semiconductor material, comprising the steps of: (a) providing a strip-shaped solid substrate having a main surface, (b) providing a solid support having a substantially horizontal surface and comprising a substantially floating liquid mass of said semiconductor material on said substantially horizontal surface, said main surface being wettable by said liquid semiconductor material, (c) contacting said liquid mass with said main surface of said substrate, onto which substrate the layer of semiconductor material is to be provided, (d) moving said substrate in its longitudinal direction along and in contact with said liquid mass so that a liquid layer of said semiconductor material is formed on said substrate and taken along with it, and (e) substantially progressively solidifying said liquid layer.
Claim 3
Dependent Claim
12 words
A method as claimed in claim 1, wherein semiconductor material is silicon.
Claim 4
Dependent Claim
35 words
A method as in claim 1, wherein said substantially horizontal surface of said solid support is the upper surface of said support and said liquid mass of said semiconductor material projects above said solid support.
Claim 5
Dependent Claim
18 words
A method as in claim 1, wherein said solid support consists of said semiconductor material in solid form.
Claim 6
Dependent Claim
34 words
A method as in claim 4, wherein during the formation of said layer, semiconductor material is supplied to said liquid mass by progressively melting said semiconductor material of said support adjacent said liquid mass.
Claim 7
Dependent Claim
24 words
A method as in claim 1, wherein said substrate is given an upward movement at the place of contact thereof with said molten mass.
Claim 8
Dependent Claim
13 words
A method as in claim 1, wherein said substrate is a flexible strip.
Claim 9
Dependent Claim
28 words
A method as in claim 1, wherein said material of said substrate surface has a wettable angle with respect to said liquid semiconductor material of at most 20°.
Claim 10
Dependent Claim
15 words
A method as in claim 1, wherein said substrate consists of an insulating refractory material.
Claim 11
Dependent Claim
16 words
A method as in claim 1, wherein said substrate consists of an electrically conducting refractory material.
Claim 12
Dependent Claim
15 words
A method as in claim 10, wherein said substrate consists of a metallic refractory material.
Claim 13
Dependent Claim
22 words
A method as in claim 10, wherein said semiconductor material consists essentially of silicon and said substrate consists essentially of elemental carbon.
Claim 14
Dependent Claim
13 words
A method as in claim 1, wherein said substrate consists of fibrous material.
Claim 15
Dependent Claim
40 words
A method as in claim 1, wherein said substantially horizontal surface of said support is bounded by a substantially straight-lined edge extending substantially along the length of said substantially horizontal surface, said substrate passing in close proximity to said edge.
Claim 16
Dependent Claim
15 words
A method as in claim 14, wherein said support has the shape of a parallelepiped.
Claim 17
Dependent Claim
25 words
A method as in claim 1, wherein the edges of said substantially horizontal surface of said support constitute edges of substantially vertically positioned surfaces thereof.
Claim 18
Dependent Claim
32 words
A method as in claim 1, wherein, during the formation of said layer of semiconductor material, said mass of liquid semiconductor material is replenished by adding thereto semiconductor material in powder form.
Claim 19
Dependent Claim
18 words
A method as in claim 1, wherein said liquid mass of semiconductor material is heated by high-frequency induction.
Claim 20
Dependent Claim
43 words
A method as in claim 1, wherein, at the place of contact between said liquid mass of semiconductor material and said main surface of said substrate, said main surface has an inclined position with respect to said substantially horizontal surface of said support.
Claim 21
Dependent Claim
20 words
A method as in claim 1, wherein said substrate is moved in a direction transverse to said substantially horizontal surface.
Claim 22
Dependent Claim
20 words
A method as in claim 20, wherein said direction is inclined to the vertical at an angle of about 10°.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-10-09 | 1982-04-10 | 1982-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-10-09 | 1986-04-10 | 1986-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-10-09 | 1990-04-10 | 1990-10-10 | $7700.00 | Window Closed / Lapsed |