US4119440A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making ion implanted zener diode
Assignee: Motors Liquidation Co
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Filing: 1976-11-26
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Granted: 1978-10-10
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Expires: 1996-11-26
Abstract
Abstract A method of making a zener diode having an accurately predetermined breakdown voltage. A discrete device and integrated circuit adaptation of this device is disclosed. A specially highly doped opposite conductivity type island is embedded in a high resistivity body portion. Embedded in the body portion contiguous the island is an ion implanted surface portion of the one conductivity type. The surface portion has an accurately predetermined concentration of conductivity determining impurity atoms in the range of about 1 × 10 16 to 1 × 10 19 atoms per cubic centimeter. A PN junction having a high breakdown voltage separates the island from the body. A PN junction having a lower but accurately predetermined breakdown voltage separates the island from the surface portion and forms a zener junction. In integrated circuit adaptations, this device preferably shares a transistor electrode for a transistor junction that is to be protected from overvoltage effects.
Inventors
- 👤 John W. Hile
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:52
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D8/00; H10D8/20; H10D8/25; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/617; H10D84/80; H10D84/811; H10D89/00; H10D89/60; H10D89/601; H10D89/611; H10P30/21; H10P30/212; Y; Y10; Y10S; Y10S148/00; Y10S148/01; Y10S438/00; Y10S438/983
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
258 words
A method of making a zener diode having an accurately predetermined breakdown voltage, said method comprising the steps of: preparing a surface of a body of semiconductive material to receive a diffusant, said body having at least a portion of one conductivity type intersecting said surface, said portion having a resistivity of about 10-100 ohm-centimeters; diffusing an opposite conductivity type impurity into an island-like surface region of said portion to form an opposite conductivity type island-like first surface region within said one conductivity type portion and thereby form a PN junction therebetween having a breakdown voltage in excess of a predetermined breakdown voltage, said impurity having a surface concentration during diffusion at least generally equal to the limit of solid solubility of said impurity in said semiconductive material; irradiating a second surface region of said portion contiguous said first surface region with an accurately predetermined number of ions of a conductivity determining impurity of said one type to increase the one conductivity type impurity concentration in said second region of said portion by an accurately predetermined amount within the range of about 1 × 10 16 to 1 × 10 19 atoms per cubic centimeter of semiconductive material, resulting in a PN junction between said first and second regions that has an accurately predetermined breakdown voltage that is lower than the breakdown voltage of the PN junction between said first region and said body portion; making a low resistance electrical connection to said first surface region; and making a low resistance electrical connection to said second surface region.
Claim 2
Independent Claim
258 words
A method of making a zener diode having an accurately predetermined breakdown voltage, said method comprising the steps of: preparing a surface of a body of semiconductive material to receive a diffusant, said body having at least a portion of one conductivity type intersecting said surface, said portion having a resistivity of about 10-100 ohm-centimeters; diffusing an opposite conductivity type impurity into an island-like surface region of said portion to form an opposite conductivity type island-like first surface region within said one conductivity type portion and thereby form a PN junction therebetween having a breakdown voltage in excess of a predetermined breakdown voltage, said impurity having a surface concentration during diffusion at least generally equal to the limit of solid solubility of said impurity in said semiconductive material; irradiating a second surface region of said portion contiguous said first surface region with an accurately predetermined number of ions of a conductivity determining impurity of said one type to increase the one conductivity type impurity concentration in said second region of said portion by an accurately predetermined amount within the range of about 1 × 10 16 to 1 × 10 19 atoms per cubic centimeter of semiconductive material, resulting in a PN junction between said first and second regions that has an accurately predetermined breakdown voltage that is lower than the breakdown voltage of the PN junction between said first region and said body portion; making a low resistance electrical connection to said first surface region; and making a low resistance electrical connection to said second surface region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-10-09 | 1982-04-10 | 1982-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-10-09 | 1986-04-10 | 1986-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-10-09 | 1990-04-10 | 1990-10-10 | $7700.00 | Window Closed / Lapsed |