Patent US4118230A successfully refreshed from Google Patents.
US4118230A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for adjusting exposure masks relative to a substrate wafer
Assignee: Siemens AG
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Filing: 1977-09-22
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Granted: 1978-10-03
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Expires: 1997-09-22
Abstract
Abstract An improved process for adjusting different exposure masks consecutively relative to a substrate wafer by providing individual pairs of adjustment marks on the substrate with each pair being associated with a selected exposure mask and the number of pairs on the substrate being equal to the number of exposure masks minus one, to be utilized. Preferably, the marks of the pairs are aligned in rows with the first mark of each pair being in the first row and the second mark of each pair being in the second row.
Inventors
- 👤 Hans Binder
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:30
CPC Classifications
G; G03; G03F; G03F9/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
210 words
In a method for adjusting individual exposure masks relative to a substrate during consecutively performed photolithographic processes wherein the substrate is provided with an adjustment structure by means of a photolithographic step employing a first mask and the method includes at least two additional photolithographic processes being consecutively performed on the substrate with each process including adjusting an exposure mask on the substrate by aligning adjustment structure on the mask to coincide with the adjustment structure of the substrate, said process causing the dimension of the adjustment structure of the mask to be reproduced on the adjustment structure of the substrate, the improvements comprising providing an adjustment structure for the substrate having a separate pair of adjustment marks for each of the exposure masks so that the number of pairs at least equals the number of exposure masks, providing each of the exposure masks with a single pair of adjustment marks comprising a first and second mark, said pair on one exposure mask being spatially arranged with respect to the pairs on the other exposure masks so that when each of the exposure masks are aligned on the substrate, the pair of adjustment marks of each mask is aligned to coincide with a different pair of marks on the substrate.
Claim 2
Dependent Claim
210 words
In a method for adjusting individual exposure masks relative to a substrate during consecutively performed photolithographic processes wherein the substrate is provided with an adjustment structure by means of a photolithographic step employing a first mask and the method includes at least two additional photolithographic processes being consecutively performed on the substrate with each process including adjusting an exposure mask on the substrate by aligning adjustment structure on the mask to coincide with the adjustment structure of the substrate, said process causing the dimension of the adjustment structure of the mask to be reproduced on the adjustment structure of the substrate, the improvements comprising providing an adjustment structure for the substrate having a separate pair of adjustment marks for each of the exposure masks so that the number of pairs at least equals the number of exposure masks, providing each of the exposure masks with a single pair of adjustment marks comprising a first and second mark, said pair on one exposure mask being spatially arranged with respect to the pairs on the other exposure masks so that when each of the exposure masks are aligned on the substrate, the pair of adjustment marks of each mask is aligned to coincide with a different pair of marks on the substrate.
Claim 3
Dependent Claim
190 words
In a method according to claim 1, wherein said pairs of adjustment marks on said substrate are aligned in a row with a first row having one mark of each pair and a second row being parallel thereto and having the second mark of each pair, said marks of the first row having a shape which is geometrically similar to the adjustment marks of the second row but larger than said marks of the second row, wherein the step of providing a pair of first and second marks on each of the exposure masks provides the first mark with a shape similar to one of the adjustment marks of the first row on the substrate and the second mark is similar in shape to one of the adjustment marks of the second row of the substrate, and wherein the first adjustment mark of each pair on the exposure mask possesses the dimensions of the adjustment mark of the second row of the adjustment structure on the substrate and the second adjustment mark on the exposure mask possesses a dimension of the adjustment mark of the first row of the substrate.
Claim 4
Dependent Claim
23 words
In a method according to claim 2, wherein the step of providing the adjustment marks provides marks having a configuration of a cross.
Claim 5
Dependent Claim
65 words
In a method according to claim 3, wherein the adjustment structure of the substrate consists of said first row composed of crosses having a bar width of 15 μm disposed in a square of 100 μm on an edge and the second row of marks consists of crosses having a bar width of 10 μm disposed in a square of 100 μm on an edge.
Claim 6
Dependent Claim
71 words
In a process according to claim 4, wherein the marks of the exposure mask have a first adjustment mark consisting of a dark cross having a bar width of approximately 10 μm disposed in a transparent square of approximately 100 μm per side and the second adjustment mark consists of a dark cross having a bar width of 15 μm centered in a transparent square of approximately 100 μm per side.
Claim 7
Dependent Claim
77 words
In a process according to claim 4, wherein the adjustment marks of an exposure mask comprise a first adjustment mark consisting of a transparent cross having a bar width of approximately 10 μm disposed in a light impermeable square of approximately 100 μm per side and the second adjustment mark of the pair consists of a light transmitting cross having a bar width of approximately 15 μm in an impermeable square of approximately 100 μm per side.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-10-02 | 1982-04-03 | 1982-10-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-10-02 | 1986-04-03 | 1986-10-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-10-02 | 1990-04-03 | 1990-10-03 | $7700.00 | Window Closed / Lapsed |