Patent US4115799A successfully refreshed from Google Patents.
US4115799A
Expired / Lapsed
US
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Thin film copper transition between aluminum and indium copper films
Assignee: Townsend and Townsend Khourie and Crew
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Filing: 1977-01-26
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Granted: 1978-09-19
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Expires: 1997-01-26
Abstract
Abstract A stable, low resistance electrical connection is made between thin film aluminum areas and thin film indium-copper conductive areas of an electronic circuit layout. The transition is made by deposition of a thin copper film as a transition region to connect the aluminum and indium-copper areas.
Inventors
- 👤 Fang-Chen Luo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 13:22
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/675; H10D64/00; H10D64/60; H10D64/62
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
73 words
In a thin film transistor matrix array in which X-Y aluminum buses electrically interconnect thin film transistor circuit arrays in which the source and drain contacts of the thin film transistors comprise a layer of indium contacting the semiconductive material and a layer of copper atop the indium forming indium-copper source and drain contacts the improvement comprising thin film copper transition areas between the aluminum buses and the indium-copper source and drain contacts.
Claim 2
Dependent Claim
73 words
In a thin film transistor matrix array in which X-Y aluminum buses electrically interconnect thin film transistor circuit arrays in which the source and drain contacts of the thin film transistors comprise a layer of indium contacting the semiconductive material and a layer of copper atop the indium forming indium-copper source and drain contacts the improvement comprising thin film copper transition areas between the aluminum buses and the indium-copper source and drain contacts.
Claim 3
Dependent Claim
58 words
The thin film transistor matrix array as set forth in claim 1, wherein the thin film transistor circuit arrays include enlarged aluminum pads to serve as one of capacitor electrodes and display element modulation electrodes, with the thin film copper transition areas provided between such enlarged aluminum pads and the indium-copper source and drain contacts of the transistors.
Claim 4
Dependent Claim
23 words
The thin film transistor matrix array as set forth in claim 1, wherein thin film copper transition areas are about 1000 Angstroms thick.
Claim 5
Dependent Claim
95 words
In a thin film electrical device in which a plurality of spaced apart orthogonal thin film aluminum bus bars are disposed upon a substrate in insulating overlapped relationship to define an X-Y matrix array, and wherein thin film transistor circuit arrays are disposed upon the substrate between and interconnected to adjacent bus bars, wherein the source and drain conductive contacts of the thin film transistors comprise a copper-indium film, the improvement wherein thin film copper transition areas are disposed between and in overlapping relationship with the aluminum buses and the copper-indium source and drain contacts.
Claim 6
Dependent Claim
95 words
In a thin film electrical device in which a plurality of spaced apart orthogonal thin film aluminum bus bars are disposed upon a substrate in insulating overlapped relationship to define an X-Y matrix array, and wherein thin film transistor circuit arrays are disposed upon the substrate between and interconnected to adjacent bus bars, wherein the source and drain conductive contacts of the thin film transistors comprise a copper-indium film, the improvement wherein thin film copper transition areas are disposed between and in overlapping relationship with the aluminum buses and the copper-indium source and drain contacts.
Claim 7
Dependent Claim
64 words
In a thin film electrical device comprising a thin film transistor disposed upon a substrate with interconnecting aluminum bus leads which permit connection of the transistor to other circuit elements and wherein the source and drain contacts of the thin film transistor comprise indium doped copper film, the improvement comprising disposing thin film copper transition areas between the aluminum buses and the indium-copper contacts.
Claim 8
Dependent Claim
64 words
In a thin film electrical device comprising a thin film transistor disposed upon a substrate with interconnecting aluminum bus leads which permit connection of the transistor to other circuit elements and wherein the source and drain contacts of the thin film transistor comprise indium doped copper film, the improvement comprising disposing thin film copper transition areas between the aluminum buses and the indium-copper contacts.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-09-18 | 1982-03-20 | 1982-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-09-18 | 1986-03-20 | 1986-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-09-18 | 1990-03-20 | 1990-09-19 | $7700.00 | Window Closed / Lapsed |