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US4109271A
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Amorphous silicon-amorphous silicon carbide photovoltaic device
Assignee: RCA Corp
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Filing: 1977-05-27
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Granted: 1978-08-22
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Expires: 1997-05-27
Abstract
Abstract A layer of amorphous silicon-carbide prepared by a glow discharge in a mixture of silane, hydrocarbon and doping gases is at the solar radiation incident surface of a photovoltaic device. The photovoltaic device includes first and second contiguous layers of amorphous silicon fabricated by a glow discharge in silane. The amorphous silicon carbide layer is contiguous to the second layer and opposite the first layer. The amorphous silicon carbide layer is substantially transparent to solar radiation and highly conductive, providing increased solar radiation collection efficiency and reduced internal resistance.
Inventors
- 👤 Jacques Isaac Pankove
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 12:47
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; H10F10/165; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/503; H10F10/17; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
153 words
A photovoltaic semiconductor device comprising: a first layer of amorphous silicon prepared by a glow discharge in silane and a doping gas, said first layer being of one conductivity type: a second layer of amorphous silicon prepared by a glow discharge in silane contiguous to said first layer, said second layer being substantially intrinsic; a third layer of amorphous silicon carbide prepared by a glow discharge in a mixture of silane, a hydrocarbon and doping gases contiguous to said second layer and spaced opposite said first layer, said third layer having an incident surface opposite said second layer on which solar radiation is capable of impinging, said third layer being of a conductivity type opposite that of said first layer and having a bandgap energy in the range of about 2.2 eV to 3.2 eV; a substrate contiguous to and electrically contacting said first layer; and means for electrically contacting said third layer.
Claim 2
Dependent Claim
153 words
A photovoltaic semiconductor device comprising: a first layer of amorphous silicon prepared by a glow discharge in silane and a doping gas, said first layer being of one conductivity type: a second layer of amorphous silicon prepared by a glow discharge in silane contiguous to said first layer, said second layer being substantially intrinsic; a third layer of amorphous silicon carbide prepared by a glow discharge in a mixture of silane, a hydrocarbon and doping gases contiguous to said second layer and spaced opposite said first layer, said third layer having an incident surface opposite said second layer on which solar radiation is capable of impinging, said third layer being of a conductivity type opposite that of said first layer and having a bandgap energy in the range of about 2.2 eV to 3.2 eV; a substrate contiguous to and electrically contacting said first layer; and means for electrically contacting said third layer.
Claim 3
Dependent Claim
35 words
The photovoltaic semiconductor device in accordance with claim 1 wherein said third layer has a graded carbon concentration which is a maximum at said incident surface and decreases toward the interface with said second layer.
Claim 4
Dependent Claim
35 words
The photovoltaic semiconductor device in accordance with claim 2 wherein said maximum carbon concentration is about 50 to 70 atomic percent and decreases to about zero atomic percent at the interface of said second layer.
Claim 5
Dependent Claim
18 words
The photovoltaic semiconductor device in accordance with claim 1 wherein said third layer has a uniform dopant concentration.
Claim 6
Dependent Claim
20 words
The photovoltaic semiconductor device in accordance with claim 4 wherein said dopant concentration is about 10 19 /cm 3 .
Claim 7
Dependent Claim
25 words
The photovoltaic device in accordance with claim 1 wherein said means for electrically contacting said third layer is a dot electrode on said incident surface.
Claim 8
Dependent Claim
19 words
The photovoltaic device in accordance with claim 1 wherein said third layer has a thickness of about 0.5 micron.
Claim 9
Dependent Claim
32 words
The photovoltaic device in accordance with claim 7 wherein said second layer has a thickness of 1.0 micron or less and said first layer has a thickness of a few hundred angstroms.
Claim 10
Dependent Claim
25 words
The photovoltaic semiconductor device in accordance with claim 1 wherein said first layer is of P-type conductivity and said third layer is of N-type conductivity.
Claim 11
Dependent Claim
25 words
The photovoltaic semiconductor device in accordance with claim 1 wherein said first layer is of N-type conductivity and said third layer is of P-type conductivity.
Claim 12
Dependent Claim
14 words
The photovoltaic semiconductor device in accordance with claim 1 wherein said hydrocarbon is methane.
Claim 13
Dependent Claim
14 words
The photovoltaic semiconductor device in accordance with claim 1 wherein said hydrocarbon is ethylene.
Claim 14
Dependent Claim
19 words
The photovoltaic semiconductor device in accordance with claim 1 wherein said doping gas of said third layer is ammonia.
References Cited (Backward Citations)
US3982262A
Cited
US4064521A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-08-21 | 1982-02-20 | 1982-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-08-21 | 1986-02-20 | 1986-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-08-21 | 1990-02-20 | 1990-08-22 | $7700.00 | Window Closed / Lapsed |