Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
197 words
In combination: first and second transistors of opposite conductivity types, each having base, emitter and collector electrodes, the collector electrode of the first transistor being connected to the base electrode of the second transistor; means for maintaining the base electrode of the first transistor at a fixed potential with respect to ground, which is in the forward direction relative to the potential at the emitter electrode of said first transistor during the clamping of the collector electrode of said second transistor described below; means for supplying emitter current to said first transistor, thereby conditioning said first transistor to supply its collector current as base drive current for said second transistor; means coupled between the emitter and collector electrodes of said second transistor for conditioning said second transistor to conduct collector-to-emitter current; and clamping means connected between said emitter electrode of said first transistor and said collector electrode of said second transistor which is poled to conduct in the forward direction during conduction of current through the collector electrode-to-emitter electrode path of said second transistor for clamping the collector electrode of said second transistor to a voltage related to that at the base electrode of said first transistor.
Claim 2
Dependent Claim
197 words
In combination: first and second transistors of opposite conductivity types, each having base, emitter and collector electrodes, the collector electrode of the first transistor being connected to the base electrode of the second transistor; means for maintaining the base electrode of the first transistor at a fixed potential with respect to ground, which is in the forward direction relative to the potential at the emitter electrode of said first transistor during the clamping of the collector electrode of said second transistor described below; means for supplying emitter current to said first transistor, thereby conditioning said first transistor to supply its collector current as base drive current for said second transistor; means coupled between the emitter and collector electrodes of said second transistor for conditioning said second transistor to conduct collector-to-emitter current; and clamping means connected between said emitter electrode of said first transistor and said collector electrode of said second transistor which is poled to conduct in the forward direction during conduction of current through the collector electrode-to-emitter electrode path of said second transistor for clamping the collector electrode of said second transistor to a voltage related to that at the base electrode of said first transistor.
Claim 3
Dependent Claim
16 words
In the combination as set forth in claim 1, said clamping means comprising a semiconductor junction.
Claim 4
Dependent Claim
35 words
In the combination as set forth in claim 1, said clamping means comprising a semiconductor junction having an offset voltage, when it conducts, which is substantially equal to the base-emitter voltage of said first transistor.
Claim 5
Dependent Claim
83 words
In the combination as set forth in claim 1, said means for supplying emitter current to said first transistor comprising a voltage source and resistor means coupled between said voltage source and said emitter electrode of said first transistor, whereby when conduction tends to increase through said clamping means, the voltage across said resistor means tends to increase, thereby reducing the base drive current to said second transitor, thereby tending to maintain constant the voltage at the collector electrode of said second transistor.
Claim 6
Dependent Claim
244 words
In combination: first and second transistors of opposite conductivity types, each having base, emitter and collector electrodes, the collector electrode of the first transistor being connected to the base electrode of the second transistor; means for maintaining the base electrode of the first transistor at a fixed reference potential which is such that current flows between the emitter and base electrodes of said first transistor during the clamping of the collector electrode of said second transistor described below; means for supplying emitter current to said first transistor, thereby conditioning said first transistor to supply its collector current as base drive current for said second transistor; means coupled between the emitter and collector electrodes of said second transistor for conditioning said second transistor to conduct collector-to-emitter current, said means comprising, in series, terminals for an operating voltage source and a switch; means for closing said switch for conditioning said second transistor to permit current flow through the collector-to-emitter electrode path of said second transistor and means for opening said switch for terminating the current flow; and clamping means connected between said emitter electrode of said first transistor and said collector electrode of said second transistor which is poled to conduct in the forward direction during conduction of current through the collector electrode-to-emitter electrode path of said second transistor for clamping the the collector electrode of said second transistor to a voltage related to said fixed reference potential at the base electrode of said first transistor.
Claim 7
Dependent Claim
244 words
In combination: first and second transistors of opposite conductivity types, each having base, emitter and collector electrodes, the collector electrode of the first transistor being connected to the base electrode of the second transistor; means for maintaining the base electrode of the first transistor at a fixed reference potential which is such that current flows between the emitter and base electrodes of said first transistor during the clamping of the collector electrode of said second transistor described below; means for supplying emitter current to said first transistor, thereby conditioning said first transistor to supply its collector current as base drive current for said second transistor; means coupled between the emitter and collector electrodes of said second transistor for conditioning said second transistor to conduct collector-to-emitter current, said means comprising, in series, terminals for an operating voltage source and a switch; means for closing said switch for conditioning said second transistor to permit current flow through the collector-to-emitter electrode path of said second transistor and means for opening said switch for terminating the current flow; and clamping means connected between said emitter electrode of said first transistor and said collector electrode of said second transistor which is poled to conduct in the forward direction during conduction of current through the collector electrode-to-emitter electrode path of said second transistor for clamping the the collector electrode of said second transistor to a voltage related to said fixed reference potential at the base electrode of said first transistor.
Claim 8
Dependent Claim
29 words
In the combination as set forth in claim 5, further including: means for removing charge carriers from the base electrode of said second transistor when said switch is opened.
Claim 9
Dependent Claim
74 words
In the combination as set forth in claim 6, said means for removing charge carriers comprising: a capacitor connected at one terminal to a point of reference potential; a diode connected between the other terminal of said capacitor and the base electrode of said second transistor and poled to conduct the carriers stored in the base electrode of said transistor into said capacitor; and a discharge circuit for said capacitor connected across said capacitor.
Claim 10
Dependent Claim
76 words
In the combination as set forth in claim 5, said switch comprising a third transistor of the same conductivity type as said second transistor, said third transistor having base, emitter and collector electrodes and being connected at its collector electrode to the emitter electrode of said second transistor and at its emitter electrode to one of said operating voltage terminals, and means for applying turn-on and turn-off voltages to the base electrode of said third transistor.
Claim 11
Dependent Claim
101 words
In the combination as set forth in claim 8, said means coupled between said emitter and said collector electrodes of said second transistor further including an inductance, said combination further including: a diode connected between the collector electrode of said second transistor and a point of reference potential, said diode being poled to conduct when the voltage at said collector electrode of said second transistor is of a sense to prevent forward conduction through said second transistor; and a capacitor in circuit with said inductance and forming a parallel resonant circuit therewith which tends to ring when said switch is opened.
Claim 12
Dependent Claim
184 words
In combination: first and second transistors of opposite conductivity types, each having base, emitter and collector electrodes, the collector electrode of said first transistor being connected to the base electrode of said second transistor; means coupled between the base and emitter electrodes of said first transistor for conditioning the same to conduct emitter-to-collector current to the base electrode of said second transistor said means including means for maintaining the base electrode of said first transistor at a fixed reference voltage level; means coupled between the emitter and collector electrodes of said second transistor for conditioning the same to conduct emitter-to-collector current; and a negative feedback circuit including means connecting the collector electrode of said second transistor to the emitter electrode of said first transistor, responsive to the tendency of the collector voltage of said second transistor to change in one sense, for changing the flow of emitter-to-collector current in said first transistor in the opposite sense, to thereby cause the base current supplied to said second transistor in a sense to counteract the tendency of the collector voltage of said second transistor to change.
Claim 13
Dependent Claim
184 words
In combination: first and second transistors of opposite conductivity types, each having base, emitter and collector electrodes, the collector electrode of said first transistor being connected to the base electrode of said second transistor; means coupled between the base and emitter electrodes of said first transistor for conditioning the same to conduct emitter-to-collector current to the base electrode of said second transistor said means including means for maintaining the base electrode of said first transistor at a fixed reference voltage level; means coupled between the emitter and collector electrodes of said second transistor for conditioning the same to conduct emitter-to-collector current; and a negative feedback circuit including means connecting the collector electrode of said second transistor to the emitter electrode of said first transistor, responsive to the tendency of the collector voltage of said second transistor to change in one sense, for changing the flow of emitter-to-collector current in said first transistor in the opposite sense, to thereby cause the base current supplied to said second transistor in a sense to counteract the tendency of the collector voltage of said second transistor to change.
Claim 14
Dependent Claim
52 words
In the combination as set forth in claim 10, further including: means for interrupting the flow of emitter-to-collector current in said second transistor; and means for concurrently discharging charge carriers which may be stored at the base electrode of said second transistor to thereby increase the turn-off speed of said second transistor.
Claim 15
Dependent Claim
44 words
In the combination as set forth in claim 11, said negative feedback circuit including means for clamping the collector electrode of said second transistor at a fixed offset voltage relative to said fixed reference voltage level at the base electrode of the first transistor.