Abstract A thin film solar cell having adjacent layers of P and N type polycrystalline semiconductor material which define a PN junction boundary, the improvement comprising a layer of n-type polycrystalline cadmium sulfide disposed on a chosen substrate material and having large grains with lateral grain boundaries on the order of about 20 micrometers or greater and a layer of polycrystalline P-type indium phosphide disposed on said layer of polycrystalline cadmium sulfide and having a thickness on the order of between 1.0 and 4.0 micrometers and further having large replicated grain boundaries with lateral dimensions and spacings approximately the same as the lateral dimensions and spacings of said large grains of cadmium sulfide, whereby the lateral grain dimensions in said cadmium sulfide and indium phosphide layers are maximized while the quantity of indium in said solar cell is minimized.
In a solar cell having adjacent layers of P and N type polycrystalline semiconductor material which define a PN junction boundary, the improvement comprising a layer of N-type polycrystalline cadmium sulfide disposed on a chosen substrate material and having large grains with lateral grain boundaries on the order of about 20 micrometers or greater, and a layer of polycrystalline P-type indium phosphide disposed on said layer of polycrystalline cadmium sulfide and having a thickness on the order of between 1.0 and 4.0 micrometers and further having large replicated grain boundaries with lateral dimensions and spacings approximately the same as the lateral dimensions and spacings of said large grains of cadmium sulfide, whereby the lateral grain dimensions in said cadmium sulfide and indium phosphide layers are maximized while the quantity of indium in said solar cell is minimized.
Claim 2
Dependent Claim
137 words
In a solar cell having adjacent layers of P and N type polycrystalline semiconductor material which define a PN junction boundary, the improvement comprising a layer of N-type polycrystalline cadmium sulfide disposed on a chosen substrate material and having large grains with lateral grain boundaries on the order of about 20 micrometers or greater, and a layer of polycrystalline P-type indium phosphide disposed on said layer of polycrystalline cadmium sulfide and having a thickness on the order of between 1.0 and 4.0 micrometers and further having large replicated grain boundaries with lateral dimensions and spacings approximately the same as the lateral dimensions and spacings of said large grains of cadmium sulfide, whereby the lateral grain dimensions in said cadmium sulfide and indium phosphide layers are maximized while the quantity of indium in said solar cell is minimized.
Claim 3
Dependent Claim
65 words
The solar cell defined in claim 1 wherein said chosen substrate material includes a thin layer of indium-tin-oxide forming an adhesive bond between said cadmium sulfide layer and an amorphous transparent glass substrate, said cell further including an upper ohmic contact electrode on said indium phosphide layer, whereby said upper ohmic contact electrode and said indium-tin-oxide layer provide series electrical connections to said solar cell.