US4100486A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monitor for semiconductor diffusion operations
Assignee: International Business Machines Corp
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Filing: 1977-03-11
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Granted: 1978-07-11
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Expires: 1997-03-11
Abstract
Abstract An electrical defect density monitor for semiconductor device fabrication utilizing a silicide of a formed transitional metal (such as platinum silicide) on a surface of a silicon substrate as a resistor in parallel with the resistance of the underlying substrate, including diffused regions, to improve measurement sensitivity of high sheet resistivity areas. The measurement can be employed for measuring the integrity of diffused regions and/or of dielectric coatings.
Inventors
- 👤 Barry N. Casowitz
- 👤 Michael D. Cowan
- 👤 Charles B. Humphreys
- 👤 Akella V. S. Satya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 22:21
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/2851; G01R31/2853; G01R31/26; G01R31/2607; G01R31/2637; G01R31/2644; G01R31/282; G01R31/2831; H; H10; H10P; H10P74/00; H10P74/20; H10P74/207
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
40 words
A method of testing continuity defects in a diffused region in a silicon semiconductor substrate comprising forming adjacent a surface portion of said region a silicide of transition metal, and measuring the resistance of said silicide at spaced points thereon.
Claim 2
Independent Claim
40 words
A method of testing continuity defects in a diffused region in a silicon semiconductor substrate comprising forming adjacent a surface portion of said region a silicide of transition metal, and measuring the resistance of said silicide at spaced points thereon.
Claim 3
Dependent Claim
10 words
The method of claim 1 where said metal is platinum.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein said surface portion is coextensive with a diffused region of said substrate.
Claim 5
Dependent Claim
10 words
The method of claim 3 where said metal is platinum.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein said diffused region comprises a test site in a semiconductor wafer.
Claim 7
Dependent Claim
10 words
The method of claim 5 where said metal is platinum.
Claim 8
Dependent Claim
32 words
The method of claim 5 wherein said diffused region has an extension of about 10 mm to about 20 mm in length with a width of about 2 to about 12 microns.
Claim 9
Dependent Claim
10 words
The method of claim 8 where said metal is platinum.
Claim 10
Dependent Claim
25 words
The method of claim 7 wherein said diffused region is contained within an area of about 20-30 by about 50-80 mils in said test site.
Claim 11
Dependent Claim
10 words
The method of claim 9 where said metal is platinum.
Claim 12
Dependent Claim
77 words
In the fabrication of integrated circuits, a method of monitoring photolithographic and diffusion operations, with said method comprising forming a diffused region in a test site of a silicon wafer concurrently with said operations, coating said region with a transition metal selected from Group VIII of the Periodic Table, heating said wafer to react said metal with the silicon of said wafer into a corresponding silicide, and measuring the resistance of said silicide at spaced points thereon.
Claim 13
Dependent Claim
77 words
In the fabrication of integrated circuits, a method of monitoring photolithographic and diffusion operations, with said method comprising forming a diffused region in a test site of a silicon wafer concurrently with said operations, coating said region with a transition metal selected from Group VIII of the Periodic Table, heating said wafer to react said metal with the silicon of said wafer into a corresponding silicide, and measuring the resistance of said silicide at spaced points thereon.
Claim 14
Dependent Claim
10 words
The method of claim 11 where said metal is platinum.
Claim 15
Dependent Claim
17 words
The method of claim 11 wherein said diffused region comprises a test site in a semiconductor wafer.
Claim 16
Dependent Claim
10 words
The method of claim 13 where said metal is platinum.
Claim 17
Dependent Claim
31 words
The method of claim 11 wherein said diffused region has an extension of about 10 to about 20 mm in length with a width of about 2 to about 15 microns.
Claim 18
Dependent Claim
10 words
The method of claim 15 where said metal is platinum.
Claim 19
Dependent Claim
25 words
The method of claim 11 wherein said diffused region is contained within an area of about 30 by about 60 mils in said test site.
Claim 20
Dependent Claim
10 words
The method of claim 17 where said metal is platinum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-07-10 | 1982-01-09 | 1982-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-07-10 | 1986-01-09 | 1986-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-07-10 | 1990-01-09 | 1990-07-11 | $7700.00 | Window Closed / Lapsed |