Method of making integrated circuit by controlled process

Claim 1

A METHOD OF INFERRING THE SEPARATION DISTANCE BETWEEN PARALLEL PLANES FORMED BY PAIRS OF SUPERPOSED PN JUNCTIONS ON A SEMICONDUCTOR SUBSTRATE BY DETERMINING THE SEPARATION OF OTHER PN JUNCTIONS FORMED ON SAID SUBSTRATE CONCURRENTLY IN THE SAME PROCESSING OPERATIONS, SAID METHOD COMPRISING THE STEPS OF DIFFUSING AN ELONGATGED AND UNIFORM REGION OF ONE CONDUCTIVITY TYPE INTO A REGION OF A SECOND CONDUCTIVITY TYPE IN A SEMICONDUCTOR SUBSTRATE, SAID DIFFUSION EXTENDING INTO THE SEMICONDUCTOR MATERIAL FROM THE SURFACE THEREOF AND FORMING A PN JUNCTIN WITH SAID SECOND CONDUCTIVITY TYPE REGION AND WITH SAID PN JUNCTION EXTENDING FROM SAID SURFACE TO A DEPTH A, SELECTIVELY DIFFUSING OVER PARTS OF SAID ELONGATED REGION THREE SEPARATED REGIONS OF SECOND CONDUCTIVITY TYPE MATERIAL IN SUCH A MANNER AS TO FORM PN UNCTIONS WITH SAID FIRST CONDUCTIVITY TYPE MATERIAL A DISTANCE B FROM THE SURFACE OF SAID SEMICONDUCTOR MATERIAL AND LESS THAN THE DISTANCE A, THEREBY CREATING THREE BURIEDE REGIONS OF SAID ONE CONDUCTIVITY TYPE MATERIAL AND FOUR CONTACT REGIONS OF SAID ONE CONDUCTIVITY MATERIAL EXTENDING TO THE SURFACE OF SAID SEMICONDUCTOR MATERIAL AND CONNECTED TO SAID BURIED REGIONS, ELECTRICALLY PROBING SAID CONTACT REGIONS AND MAKING ELECTRICAL MEASUREMENTS WITH THE PROBES TO DETERMINE THE RESISTIVITY OF SAID BURIED REGIONS, AND DETERMINING FROM SAID RESISTIVITY MEASUREMENTS THE THICKNESS OF SAID BURIED REGIONS, SAID THICKNESS BEING THE DISTANCE A-B WHICH TO A HIGH DEGREE OF APPROXIMATION IS THE SEPARATION DISTANCE BETWEEN ALL OF SAID SUPERPOSED PN JUNCTIONS.

Claim 2

A METHOD OF INFERRING THE SEPARATION DISTANCE BETWEEN PARALLEL PLANES FORMED BY PAIRS OF SUPERPOSED PN JUNCTIONS ON A SEMICONDUCTOR SUBSTRATE BY DETERMINING THE SEPARATION OF OTHER PN JUNCTIONS FORMED ON SAID SUBSTRATE CONCURRENTLY IN THE SAME PROCESSING OPERATIONS, SAID METHOD COMPRISING THE STEPS OF DIFFUSING AN ELONGATGED AND UNIFORM REGION OF ONE CONDUCTIVITY TYPE INTO A REGION OF A SECOND CONDUCTIVITY TYPE IN A SEMICONDUCTOR SUBSTRATE, SAID DIFFUSION EXTENDING INTO THE SEMICONDUCTOR MATERIAL FROM THE SURFACE THEREOF AND FORMING A PN JUNCTIN WITH SAID SECOND CONDUCTIVITY TYPE REGION AND WITH SAID PN JUNCTION EXTENDING FROM SAID SURFACE TO A DEPTH A, SELECTIVELY DIFFUSING OVER PARTS OF SAID ELONGATED REGION THREE SEPARATED REGIONS OF SECOND CONDUCTIVITY TYPE MATERIAL IN SUCH A MANNER AS TO FORM PN UNCTIONS WITH SAID FIRST CONDUCTIVITY TYPE MATERIAL A DISTANCE B FROM THE SURFACE OF SAID SEMICONDUCTOR MATERIAL AND LESS THAN THE DISTANCE A, THEREBY CREATING THREE BURIEDE REGIONS OF SAID ONE CONDUCTIVITY TYPE MATERIAL AND FOUR CONTACT REGIONS OF SAID ONE CONDUCTIVITY MATERIAL EXTENDING TO THE SURFACE OF SAID SEMICONDUCTOR MATERIAL AND CONNECTED TO SAID BURIED REGIONS, ELECTRICALLY PROBING SAID CONTACT REGIONS AND MAKING ELECTRICAL MEASUREMENTS WITH THE PROBES TO DETERMINE THE RESISTIVITY OF SAID BURIED REGIONS, AND DETERMINING FROM SAID RESISTIVITY MEASUREMENTS THE THICKNESS OF SAID BURIED REGIONS, SAID THICKNESS BEING THE DISTANCE A-B WHICH TO A HIGH DEGREE OF APPROXIMATION IS THE SEPARATION DISTANCE BETWEEN ALL OF SAID SUPERPOSED PN JUNCTIONS.