US4097310A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming silicon solar energy cells
Assignee: BP Solar International LLC
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Filing: 1977-06-16
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Granted: 1978-06-27
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Expires: 1997-06-16
Abstract
Abstract A method of forming a silicon solar energy cell, which comprises forming an electron generating junction on a single crystal silicon wafer and thereafter using a saw having a diamond blade to cut through the wafer and the junction formed therein.
Inventors
- 👤 Joseph Lindmayer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 02:16
CPC Classifications
H; H10; H10P; H10P52/00; H10F; H10F71/00; H10F71/121; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/153
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
115 words
A method of improving the electron generating efficiency of a silicon solar energy cell while forming same from an individual wafer of silicon having at least one dimension larger than the corresponding dimension of the cell, comprising treating the wafer to produce at a surface thereof a junction at which electrons are generated when the surface is exposed to light, and thereafter using a dicing saw having a diamond blade rotating at least at 5,000 r.p.m. and cutting the individual treated wafer at and through said surface junction to form a cell having at least one dimension less than that of said wafer and improved electron generating efficiency when said surface is exposed to light.
Claim 2
Independent Claim
115 words
A method of improving the electron generating efficiency of a silicon solar energy cell while forming same from an individual wafer of silicon having at least one dimension larger than the corresponding dimension of the cell, comprising treating the wafer to produce at a surface thereof a junction at which electrons are generated when the surface is exposed to light, and thereafter using a dicing saw having a diamond blade rotating at least at 5,000 r.p.m. and cutting the individual treated wafer at and through said surface junction to form a cell having at least one dimension less than that of said wafer and improved electron generating efficiency when said surface is exposed to light.
Claim 3
Dependent Claim
19 words
A method as claimed in claim 1, in which said diamond blade rotates at about 5,000 to 20,000 r.p.m.
Claim 4
Dependent Claim
17 words
A method as claimed in claim 1, in which said diamond blade rotates at about 18,000 r.p.m.
Claim 5
Dependent Claim
20 words
A method as claimed in claim 1, in which the cutting speed is about 0.05 to 10 inches per second.
Claim 6
Dependent Claim
18 words
A method as claimed in claim 1, in which the cutting speed is about 1 inch per second.
Claim 7
Dependent Claim
15 words
A silicon solar energy cell formed by the practice of the method of claim 1.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-06-26 | 1981-12-26 | 1982-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-06-26 | 1985-12-26 | 1986-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-06-26 | 1989-12-26 | 1990-06-27 | $7700.00 | Window Closed / Lapsed |