US4096619A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor scribing method
Assignee: International Telephone and Telegraph Corp
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Filing: 1977-01-31
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Granted: 1978-06-27
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Expires: 1997-01-31
Abstract
Abstract This relates to the scribing and breaking of a semiconductor wafer into individual dies by anodizing the silicon in regions corresponding to the die boundaries. The regions are selectively anodized, and the anodization is continued until the anodized silicon extends into the semiconductor wafer to a depth that allows easy breakage when the wafer is stressed. To facilitate breakage, the anodized silicon may be removed with hydrofluoric acid.
Inventors
- 👤 Charles R. Cook, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:55
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; B; B23; B23P; B23P17/00; H10P14/6324; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P54/00; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49789; Y10T29/4979
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
41 words
A method of breaking a semiconductor material in accordance with a desired breakage pattern comprising: anodizing preselected regions of the semiconductor material; and stressing said semiconductor material until said semiconductor material breaks in said regions weakened by the step of anodizing.
Claim 2
Independent Claim
41 words
A method of breaking a semiconductor material in accordance with a desired breakage pattern comprising: anodizing preselected regions of the semiconductor material; and stressing said semiconductor material until said semiconductor material breaks in said regions weakened by the step of anodizing.
Claim 3
Dependent Claim
15 words
A method according to claim 1 further including removing the anodized material prior to breaking.
Claim 4
Dependent Claim
12 words
A method according to claim 1 wherein said semiconductor material is silicon.
Claim 5
Independent Claim
37 words
A method of breaking a semiconductor wafer into a pluralityu of individual semiconductor dies comprising: anodizing said wafer along selected regions to a predetermined depth; and stressing said wafer until said wafer breaks along said selected regions.
Claim 6
Independent Claim
37 words
A method of breaking a semiconductor wafer into a pluralityu of individual semiconductor dies comprising: anodizing said wafer along selected regions to a predetermined depth; and stressing said wafer until said wafer breaks along said selected regions.
Claim 7
Dependent Claim
18 words
A method according to claim 4 further including removing the anodized silicon with hydrofluoric acid prior to stressing.
Claim 8
Independent Claim
59 words
A method of scribing a semiconductor wafer comprising: forming a protective insulating layer on the surface of said wafer; removing preselected portions of said insulating layer forming windows which expose said wafer in the regions to be scribed; anodizing said exposed semiconductor material to a predetermined depth; and stressing said wafer until said wafer breaks along said preselected regions.
Claim 9
Independent Claim
59 words
A method of scribing a semiconductor wafer comprising: forming a protective insulating layer on the surface of said wafer; removing preselected portions of said insulating layer forming windows which expose said wafer in the regions to be scribed; anodizing said exposed semiconductor material to a predetermined depth; and stressing said wafer until said wafer breaks along said preselected regions.
Claim 10
Dependent Claim
33 words
A method according to claim 6 further including removing the anodized silicon prior to stressing, thereby forming a pattern of moats which create regions of reduced strength in the wafer for easy breakage.
Claim 11
Dependent Claim
16 words
A method according to claim 6 wherein said predetermined depth is related to said window size.
Claim 12
Dependent Claim
18 words
A method according to claim 6 wherein the insulating layer is formed by oxidization of the semiconductor wafer.
Claim 13
Dependent Claim
12 words
A method according to claim 9 wherein said insulating layer is vapox.
Claim 14
Dependent Claim
36 words
A method according to claim 6 wherein the anodizing step comprises: submerging the semiconductor wafer into an anodizing solution; and applying an anodizing potential to the semiconductor material so that the exposed regions become an anode.
Claim 15
Dependent Claim
13 words
A method according to claim 11 wherein the anodizing solution contains an acid.
Claim 16
Dependent Claim
23 words
A method according to claim 11 wherein the anodizing solution is selected from a group including sulfuric, phosphoric, boric and nitric acid solutions.
Claim 17
Dependent Claim
14 words
A method according to claim 11 wherein said anodizing potential causes an exothermic reaction.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-06-26 | 1981-12-26 | 1982-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-06-26 | 1985-12-26 | 1986-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-06-26 | 1989-12-26 | 1990-06-27 | $7700.00 | Window Closed / Lapsed |