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US4094007A
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Temperature-compensated analog voltage memory device
Assignee: Panasonic Holdings Corp
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Filing: 1976-11-26
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Granted: 1978-06-06
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Expires: 1996-11-26
Abstract
Abstract In an analog voltage memory device of the type wherein a gate of a MOS field-effect transistor is connected to one terminal of analog switching means and to one terminal of a nonpolarized capacitor with the other terminal grounded, whereby a DC analog input voltage may be held as a source follower voltage of MOS field-effect transistor, adverse effects on the operation due to the variation in ambient temperature are eliminated by a constant current circuit including a NPN transistor. Variation in output due to the variation in ambient temperature may be minimized independently of drain current of MOS field-effect transistor, and drifts due to variation in ambient temperature of equipment and instruments such as pollution detectors and recorders which are installed outdoors may be reduced to a minimum. This analog voltage memory device is used as peak hold memory, sample-and-hold memory, zero-point memory, etc. and can well hold signals for a long time to achieve a non-volatile memory in spite of no power supply.
Inventors
- 👤 Shunji Minami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:42
CPC Classifications
G; G11; G11C; G11C27/00; G11C27/02; G11C27/024; G11C27/026
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
148 words
A temperature-compensated analog voltage memory device comprising (a) a MOS field-effect transistor, (b) analog switching means having one terminal connected to the gate of said MOS field-effect transistor, (c) a nonpolarized capacitor interconnected between the gate of said MOS field-effect transistor and ground, leakage of said capacitor being prevented by said MOS field-effect transistor and said capacitor, (d) an NPN transistor having its collector connected to the source of said MOS field-effect transistor, said NPN transistor being used as a constant current source and to make constant drain current of said MOS field-effect transistor, (e) an output resistor interconnected between the emitter of said NPN transistor and a negative power supply, and (f) a constant voltage means connected to the base of said NPN transistor, whereby, an input applied to the other terminal of said analog switching means being memorized and transferred output, a non-volatile memory being made.
Claim 2
Dependent Claim
148 words
A temperature-compensated analog voltage memory device comprising (a) a MOS field-effect transistor, (b) analog switching means having one terminal connected to the gate of said MOS field-effect transistor, (c) a nonpolarized capacitor interconnected between the gate of said MOS field-effect transistor and ground, leakage of said capacitor being prevented by said MOS field-effect transistor and said capacitor, (d) an NPN transistor having its collector connected to the source of said MOS field-effect transistor, said NPN transistor being used as a constant current source and to make constant drain current of said MOS field-effect transistor, (e) an output resistor interconnected between the emitter of said NPN transistor and a negative power supply, and (f) a constant voltage means connected to the base of said NPN transistor, whereby, an input applied to the other terminal of said analog switching means being memorized and transferred output, a non-volatile memory being made.
Claim 3
Dependent Claim
22 words
A temperature-compensated analog voltage memory device as set forth in claim 1 wherein said analog switching means consists of a reed relay.
Claim 4
Dependent Claim
81 words
A temperature-compensated analog voltage memory device as set forth in claim 1 wherein an output terminal of an operational amplifier is connected to the other terminal of said analog switching means, the source of said MOS field-effect transistor is connected to an inverting input terminal of said operational amplifier, and an external input is applied to a noninverting input terminal of said operational amplifier and is converted into a source follower output of said MOS field-effect transistor, which output is held.
Claim 5
Dependent Claim
22 words
A temperature-compensated analog voltage memory device as set forth in claim 3 wherein said analog switching means consists of a reed relay.
Claim 6
Dependent Claim
42 words
A temperature-compensated analog voltage memory device as set forth in claim 3 wherein said analog switching means consists of a second field-effect transistor, and a negative terminal of said operational amplifier is connected through a zener diode to said negative power supply.
Claim 7
Dependent Claim
32 words
A temperature-compensated analog voltage memory device as set forth in claim 1 wherein said constant voltage means consists of a voltage divider consisting of a first and second resistors connected in series.
Claim 8
Dependent Claim
32 words
A temperature-compensated analog voltage memory device as set forth in claim 3 wherein said constant voltage means consists of a voltage divider consisting of a first and second resistors connected in series.
Claim 9
Dependent Claim
32 words
A temperature-compensated analog voltage memory device as set forth in claim 5 wherein said constant voltage means consists of a voltage divider consisting of a first and second resistors connected in series.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-06-05 | 1981-12-05 | 1982-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-06-05 | 1985-12-05 | 1986-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-06-05 | 1989-12-05 | 1990-06-06 | $7700.00 | Window Closed / Lapsed |