Cesium injection system for negative ion duoplasmatrons

Claim 3

The method of claim 1 in which the energetic hydrogen atoms and ions impinge on the Cs coated surface from the plasma ring around 360°.

Claim 4

The method of claim 2 in which uniformly energetic hydrogen atoms impringe on the coated surface continuously obliquely around 360°.

Claim 5

The method of claim 3 including the step of maintaining the metal surface with a Cs coating thereon that is a monolayer about one atom thick containing about 10 12 atoms of Cs/Cm 3 in a vacuum of about 1 torr.

Claim 6

The invention of claim 4 in which the Cs coated surface is maintained at between 600° - 700° C.

Claim 7

Apparatus for use with a source of an annular hydrogen plasma, comprising: a. longitudinally extending, foraminous cartridge means having a cylindrical side wall; one, flat, circular, tip end surface and an opposite other end; an open-ended cavity; and uniformly spaced orifices for venting the cavity through the side wall to coat the surface; b. electrical potential means for producing a potential well around the one tip end of the cartridge means; c. source means of an annular hydrogen plasma ring containing energetic hydrogen atoms and ions in its annulus having removable connection means inside the annulus of the plasma ring at the opposite other end of the cartridge means from the one tip end for selectively opening and closing the cavity and for connecting the cartridge means to the electrical potential means in the annulus of the plasma ring; d. solid means containing cesium that is selectively loaded into the cavity by opening and closing the cavity with the connection means; and e. electrical heat source means selectively supported by and insulated from the connection means for vaporizing the cesium by heating the cartridge means to produce cesium vapor that comes out of the orifices from the cavity for coating the one tip end with the cesium for interaction with the energetic hydrogen atoms and ions from the hydrogen plasma in the annulus of the plasma ring for producing negative hydrogen ions at the one tip end of the cartridge means and for extracting them in the electrical potential well along a trajectory co-axial with the axis of the annular hydrogen plasma.

Claim 8

Apparatus for use with a source of an annular hydrogen plasma, comprising: a. longitudinally extending, foraminous cartridge means having a cylindrical side wall; one, flat, circular, tip end surface and an opposite other end; an open-ended cavity; and uniformly spaced orifices for venting the cavity through the side wall to coat the surface; b. electrical potential means for producing a potential well around the one tip end of the cartridge means; c. source means of an annular hydrogen plasma ring containing energetic hydrogen atoms and ions in its annulus having removable connection means inside the annulus of the plasma ring at the opposite other end of the cartridge means from the one tip end for selectively opening and closing the cavity and for connecting the cartridge means to the electrical potential means in the annulus of the plasma ring; d. solid means containing cesium that is selectively loaded into the cavity by opening and closing the cavity with the connection means; and e. electrical heat source means selectively supported by and insulated from the connection means for vaporizing the cesium by heating the cartridge means to produce cesium vapor that comes out of the orifices from the cavity for coating the one tip end with the cesium for interaction with the energetic hydrogen atoms and ions from the hydrogen plasma in the annulus of the plasma ring for producing negative hydrogen ions at the one tip end of the cartridge means and for extracting them in the electrical potential well along a trajectory co-axial with the axis of the annular hydrogen plasma.

Claim 9

The apparatus of claim 6 having connection means at the opposite other end of the cartridge from the tip end thereof for selectively attaching the cartridge means in the annulus of the plasma ring to the heat source means by selectively opening the cavity for loading the solid cesium containing means therein.

Claim 10

The apparatus of claim 7 having four equally spaced orifices symmetric with the axis of the cartridge and radiating symmetrically at right angles thereto in the annulus of the plasma ring.

Claim 11

The apparatus of claim 8 in which the solid means is a mixture of cesium-biochromate and titanium that vaporizes at a temperature below about 600° C.

Claim 12

The apparatus of claim 9 in which the cartridge means is a tantalum metal cylinder with an outer diameter of 0.21 in., a length of 0.65 in., a cavity 0.125 in. in inner diameter and 0.61 in. long, and in which each of the orifices is 0.010 in. in diameter and diametrically opposed to another orifice, and the heat source means is connected to the cartridge means for heating the cartridge means to at least between 600° C and 700° C.