Multi-layer reflector for electroluminescent device

Claim 2

A semiconductor electroluminescent device comprising: a body of semiconductor material capable of radiation emission in the wavelength range of 0.6 to 1.3 micrometers, said body having opposed facet surfaces from which the radiation is capable of being emitted; and a reflector on at least one facet surface, said reflector having a plurality of contiguous layers of alternating composition, said layers being of silicon (Si) and a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), magnesium fluoride (MgF 2 ) and silicon dioxide (SiO 2 ), said layer being contiguous to said facet surface is of said selected group of material, said contiguous layers are each approximately λ/4n in thickness, where "λ" is the free space wavelength of radiation emitted from the electroluminescent device, and "n" is the index of refraction of the layer.

Claim 3

The semiconductor electroluminescent device in accordance with claim 1 wherein said plurality of contiguous layers comprises one layer of a material from the selected group and one layer of silicon.

Claim 4

The semiconductor electroluminescent device in accordance with claim 1 wherein said plurality of contiguous layers comprises three layers of a material from the selected group and three layers of silicon.

Claim 5

The semiconductor electroluminescent device in accordance with claim 2 wherein said reflector is on both facet surfaces.

Claim 6

A semiconductor electroluminescent device comprising: a body of semiconductor material capable of radiation emission in the wavelength range of 0.6 to 1.3 micrometers, said body having opposed facet surfaces from which the radiation is capable of being emitted; and a first reflector having a first layer of a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), magnesium fluoride (MgF 2 ) and silicon dioxide (SiO 2 ) contiguous to a facet surface, and a second layer of silicon (Si) contiguous to said first layer, said first and second layers are each approximately λ/4n in thickness, where "λ" is the free space wavelength of radiation emitted from said device, and "n" is the index of refraction of the layer.

Claim 7

A semiconductor electroluminescent device comprising: a body of semiconductor material capable of radiation emission in the wavelength range of 0.6 to 1.3 micrometers, said body having opposed facet surfaces from which the radiation is capable of being emitted; and a first reflector having a first layer of a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), magnesium fluoride (MgF 2 ) and silicon dioxide (SiO 2 ) contiguous to a facet surface, and a second layer of silicon (Si) contiguous to said first layer, said first and second layers are each approximately λ/4n in thickness, where "λ" is the free space wavelength of radiation emitted from said device, and "n" is the index of refraction of the layer.

Claim 8

The electroluminescent device in accordance with claim 5 further comprising: a second reflector on said opposite facet surface having six contiguous layers of alternating composition, said contiguous layers are of silicon (Si) and a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), magnesium fluoride (MgF 2 ) and silicon dioxide (SiO 2 ), said layer contiguous to said opposite facet surface is of said selected group of materials, said layers are each approximately λ/4n in thickness, where "λ" is the free space wavelength of radiation emitted from the device, and "n" is the index of refraction of said layer.

Claim 9

A semiconductor electroluminescent device comprising: a body of semiconductor material having opposed facet surfaces, opposed side surfaces extending to said facet surfaces and opposed first and second contact surfaces extending to said facet and side surfaces, a first region of N-type conductivity extending along said first contact surface, a second region of P-type conductivity extending along said second contact surface, and a third region contiguous to and between said first and second region, said third region capable of emitting radiation in the wavelength range of 0.6 to 1.3 micrometers; and a reflector on at least one facet surface, said reflector having a plurality of contiguous layers of alternating composition, said layers being of silicon (Si) and a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), magnesium fluoride (MgF 2 ) and silicon dioxide (SiO 2 ) said layer being contiguous to said facet surface is of said selected group of materials, said contiguous layers are each approximately λ/4n in thickness, where "λ" is the free space wavelength of radiation emitted from the electroluminescent device, and "n" is the index of refraction of the layer.

Claim 10

A semiconductor electroluminescent device comprising: a body of semiconductor material having opposed facet surfaces, opposed side surfaces extending to said facet surfaces and opposed first and second contact surfaces extending to said facet and side surfaces, a first region of N-type conductivity extending along said first contact surface, a second region of P-type conductivity extending along said second contact surface, and a third region contiguous to and between said first and second region, said third region capable of emitting radiation in the wavelength range of 0.6 to 1.3 micrometers; and a reflector on at least one facet surface, said reflector having a plurality of contiguous layers of alternating composition, said layers being of silicon (Si) and a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), magnesium fluoride (MgF 2 ) and silicon dioxide (SiO 2 ) said layer being contiguous to said facet surface is of said selected group of materials, said contiguous layers are each approximately λ/4n in thickness, where "λ" is the free space wavelength of radiation emitted from the electroluminescent device, and "n" is the index of refraction of the layer.