Abstract Disclosed is a process for passivating a first metallization pattern on a semiconductor substrate and providing a substantially planar quartz surface for subsequent metallization patterns in which a first polymer layer is applied over a first metallization layer and other portions of the substrate, providing a substantially planar surface. After a first curing, the first layer of polymer material is removed down to a thin layer of defined thickness over the first metallization pattern and, after a second curing, a quartz layer is applied over the polymer layer forming a substantially planar quartz top surface. Also disclosed is a method of forming via holes to the first metallization pattern as well as particular photoresist resins.
A process for passivating a metallization pattern on a substrate and for providing a substantially planar top surface for subsequent layers of metallization comprising the steps of: providing a substrate with a first metallization pattern thereon; applying a polymer material over said substrate and said metallization such that said polymer material will have a substantially planar top surface; heating said structure as a first curing step for said polymer material; removing said polymer material down to a thin layer of defined thickness over the first metallization pattern; heating said resultant structure providing a second curing for said polymer material; and applying a layer of quartz over said polymer layer.
Claim 2
Dependent Claim
109 words
A process for passivating a metallization pattern on a substrate and for providing a substantially planar top surface for subsequent layers of metallization comprising the steps of: providing a substrate with a first metallization pattern thereon; applying a polymer material over said substrate and said metallization such that said polymer material will have a substantially planar top surface; heating said structure as a first curing step for said polymer material; removing said polymer material down to a thin layer of defined thickness over the first metallization pattern; heating said resultant structure providing a second curing for said polymer material; and applying a layer of quartz over said polymer layer.
Claim 3
Dependent Claim
37 words
A process as in claim 1 wherein said polymer material is a photoresist comprising: a resin selected from the group consisting of o-diazoarylquinone/phenolformaldehyde resin and a soluble formaldehyde resin with a content of a radical forming agent.
Claim 4
Dependent Claim
21 words
A process as in claim 2 wherein said radical forming agent comprises: peroxidic polymerization initiators, azobisisobutyronitril or thermally curable phenolformaldehyde resins.
Claim 5
Dependent Claim
28 words
A process as in claim 1 wherein the step of applying said layer of polymer material comprises: applying said polymer material by means of a spin coating process.
Claim 6
Dependent Claim
52 words
A process as in claim 1 wherein the step of removing said cured layer of polymer material is performed by the method comprising the step of: removing the polymer material in a solution containing phosphoric acid and potassium permanganate down to a thin layer of a defined thickness over the metallization pattern.
Claim 7
Dependent Claim
34 words
A process as in claim 1 wherein the step of curing said polymer layer for the second time comprises the step of: performing the second curing at a higher temperature than the first curing.
Claim 8
Dependent Claim
27 words
A process as in claim 1 wherein the step of applying the quartz layer comprises the step of: applying the quartz layer by means of cathode sputtering.