US4086608A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Light emitting diode
Assignee: United States Department of the Navy
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Filing: 1975-11-28
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Granted: 1978-04-25
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Expires: 1995-11-28
Abstract
Abstract A light emitting diode with emission wavelength in the 1.06μm region suitable for use with the 1.06μm transmission window in optical fibers. The diode is fabricated by liquid phase epitaxial growth of p and n type InAs x P 1-x layers on InP substrates.
Inventors
- 👤 Arthur R. Clawson
- 👤 Herman H. Wieder
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 00:30
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/811
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
197 words
A light emitting diode capable of emitting light in the infrared portion of the spectrum and at room temperature comprising: (a) an N doped InP substrate, (b) an N doped epitaxial layer of InAs x P 1-x deposed on said substrate, said N doped epitaxial layer having a first surface in contact with said substrate and a second surface opposite said first surface with x ranging in value from 0.04 at said first surface to 0.05 at said second surface and said substrate and said N doped layer having lattice constants with a mismatch of less than 0.7%, (c) a P doped epitaxial layer of InAs x P 1-x deposed on said N doped layer with x having a value of 0.05 said N doped layer and said P doped layer having substantially identical lattice constants, and (d) a conductive ohmic contact material on the surface of said P doped layer, (e) a conductive ohmic contact material on the exterior surface of said substrate, (f) whereby at room temperature and with a voltage applied across said ohmic contacts that ranges from 0.9 to 1.1 volts, said diode will emit light in the range from 0.92 to 1.1μm.
Claim 2
Dependent Claim
197 words
A light emitting diode capable of emitting light in the infrared portion of the spectrum and at room temperature comprising: (a) an N doped InP substrate, (b) an N doped epitaxial layer of InAs x P 1-x deposed on said substrate, said N doped epitaxial layer having a first surface in contact with said substrate and a second surface opposite said first surface with x ranging in value from 0.04 at said first surface to 0.05 at said second surface and said substrate and said N doped layer having lattice constants with a mismatch of less than 0.7%, (c) a P doped epitaxial layer of InAs x P 1-x deposed on said N doped layer with x having a value of 0.05 said N doped layer and said P doped layer having substantially identical lattice constants, and (d) a conductive ohmic contact material on the surface of said P doped layer, (e) a conductive ohmic contact material on the exterior surface of said substrate, (f) whereby at room temperature and with a voltage applied across said ohmic contacts that ranges from 0.9 to 1.1 volts, said diode will emit light in the range from 0.92 to 1.1μm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-04-24 | 1981-10-24 | 1982-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-04-24 | 1985-10-24 | 1986-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-04-24 | 1989-10-24 | 1990-04-25 | $7700.00 | Window Closed / Lapsed |