Direct measurement of the electron beam of a scanning electron microscope

Claim 2

Apparatus for obtaining a relative measurement of the electron beam diameter of a scanning electron microscope comprising: current source means for generating electrical current; heated wire means connected to said current source means, for acting as a knife edge to cause a change in the current density of said electron beam as it is scanned across said knife edge; support means for supporting said heated wire means; electron collector means for receiving said electron beam after it has passed said knife edge; and display means receiving the output of said electron collector for utilizing said received changing current density of said electron beam to display a relative measurement of said electron beam diameter.

Claim 3

The apparatus of claim 1 in which said heated wire means is a tungsten wire.

Claim 4

The apparatus of claim 2 in which said tungsten wire is approximately 0.001 inches in diameter.

Claim 5

The apparatus of claim 2 in which said tungsten wire is approximately 1 millimeter long.

Claim 6

The apparatus of claim 2 in which said electron collector is a Faraday cell.

Claim 7

Apparatus for measuring the electron beam of a scanning electron microscope, comprising; current source means for generating electrical current; heated wire means connected to said current source means for acting as a knife edge to cause a change in current density of said electron beam as it is scanned across said knife edge during an initial scan; transducer assembly means supporting said heated wire means for moving said heated wire a known distance during a second scan of said electron beam to cause a shifted change in current density of said electron beam as it is scanned across said knife edge; electron collector means for receiving said electron beam of said initial and said second scans; and display means receiving said electron collector output for said initial and second scans to display a relative measurement of said electron beam diameter and a shifted measurement of said electron beam diameter with the amount of said shift providing a reference distance against which said relative measurement of said electron beam diameter may be compared.

Claim 8

Apparatus for measuring the electron beam of a scanning electron microscope, comprising; current source means for generating electrical current; heated wire means connected to said current source means for acting as a knife edge to cause a change in current density of said electron beam as it is scanned across said knife edge during an initial scan; transducer assembly means supporting said heated wire means for moving said heated wire a known distance during a second scan of said electron beam to cause a shifted change in current density of said electron beam as it is scanned across said knife edge; electron collector means for receiving said electron beam of said initial and said second scans; and display means receiving said electron collector output for said initial and second scans to display a relative measurement of said electron beam diameter and a shifted measurement of said electron beam diameter with the amount of said shift providing a reference distance against which said relative measurement of said electron beam diameter may be compared.

Claim 9

The apparatus of claim 6 in which said heated wire means, is a tungsten wire.

Claim 10

The apparatus of claim 7 in which said tungsten wire is aproximately 0.001 inches in diameter.

Claim 11

The apparatus of claim 7 in which said tungsten wire is approximately 1 millimeter long.

Claim 12

The apparatus of claim 7 in which said electron collector is a Faraday cell.

Claim 13

The apparatus of claim 6 in which said transducer assembly comprises: D.c. voltage source means for generating a D.C. voltage; one or more transducer plate means receiving said D.C. voltage for changing in thickness in response to application of said D.C. voltage; elastic compliance means proximate to and cooperating with said transducer plate means for changing in thickness in response to a change in thickness by said transducer plate means; mechanical bias means proximate to said elastic compliance means and said transducer plate means for providing a bias to said elastic compliance means and said transducer plate means; support means proximate to said elastic compliance means for supporting said heated wire with tension, said support means cooperating with said elastic compliance means to move in response to movement of said elastic compliance means; and frame members means connected to said mechanical bias means for supporting said mechanical bias means.

Claim 14

The apparatus of claim 11 in which said transducer plate means are fabricated from a transducer material of high reproducibility.

Claim 15

The apparatus of claim 12 in which said transducer plate means are fabricated from a transducer material composed of very hard lead zirconate-titanate with a curie point larger than or equal to 290° C.

Claim 16

The apparatus of claim 11 in which said support means is positioned between said transducer plate means and said elastic compliance means.

Claim 17

The apparatus of claim 14 in which said mechanical bias means extends through said transducer plates means, said support means, said elastic compliance means, and said frame member means, said frame member means being adjacent to said elastic compliance means, and said mechanical bias means being adjacent to said frame member means and said transducer plate means and providing a mechanical bias thereto.

Claim 20

The method of claim 16 including the steps of: moving said heated wire a known distance by a transducer assembly during a second scan of said electron beam to generate a pair of similar current densities, one shifted from the other, as said electron beam is scanned across said knife edge; displaying said second scan, with the amount of said current density shift being a reference distance against which said relative measurement of said electron beam diameter may be compared.