US4082637A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for manufacturing semiconductor structures by sputter etching
Assignee: Leonardo SpA
•
Filing: 1976-10-07
•
Granted: 1978-04-04
•
Expires: 1996-10-07
Abstract
Abstract A process for manufacturing semiconductor devices, particularly monocrystalline structures by sputter etching, wherein the electric discharge is effected in a rarefied atmosphere, the components of which are Argon and Hydrogen, or Argon and H 2 O, or inert gas and a gas developing Hydrogen ions.
Inventors
- 👤 Carlo Misiano
- 👤 Karl Heinz Diedrich
- 👤 Enrico Simonetti
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 19:45
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/246
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
85 words
A process for manufacturing a semiconductor monocrystalline structure by sputter etching a semiconductor substrate material having a masking material thereon, said process comprising sputter etching said substrate material with an electric discharge at a higher rate than said masking material is etched, in a rarefied atmosphere of: (a) Argon and hydrogen; or (b) Argon and H 2 O; or (c) an inert gas and a gas developing hydrogen ions to thereby reduce surface contamination of said substrate material by back scattering of said masking material.
Claim 2
Dependent Claim
85 words
A process for manufacturing a semiconductor monocrystalline structure by sputter etching a semiconductor substrate material having a masking material thereon, said process comprising sputter etching said substrate material with an electric discharge at a higher rate than said masking material is etched, in a rarefied atmosphere of: (a) Argon and hydrogen; or (b) Argon and H 2 O; or (c) an inert gas and a gas developing hydrogen ions to thereby reduce surface contamination of said substrate material by back scattering of said masking material.
Claim 3
Dependent Claim
25 words
Process according to claim 1 wherein said substrate material is selected from the group consisting of Ge and InSb and said masking material is Ni.
Claim 4
Dependent Claim
37 words
Process according to claim 1 wherein said substrate material is Ge, said masking material is Ni and said process is performed in a rarefied atmosphere of 5 millitorr of Argon and 2 millitorr of H 2 O.
Claim 5
Dependent Claim
37 words
Process according to claim 1 wherein said substrate material is Ge, said masking material is Ni and said process is performed in a rarefied atmosphere of 5 millitorr of Argon and 5 millitorr of H 2 O.
Claim 6
Dependent Claim
37 words
Process according to claim 1 wherein said substrate material is InSb, said masking material is Ni and said process is performed in a rarefied atmosphere of 5 millitorr of Argon and 2 millitorr of H 2 O.
Claim 7
Dependent Claim
38 words
Process according to claim 1 wherein said substrate material is InSb, said masking material is Ni and said process is performed in a rarefied atmosphere of 5 millitorr of Argon and 5 L millitorr of H 2 O.
Claim 8
Dependent Claim
19 words
Process according to claim 1 in which said process is performed in an atmosphere of Argon and hydrogen ions.
Claim 9
Dependent Claim
20 words
Process according to claim 7 in which said hydrogen ions are produced by hydrogen gas ionized by said electric discharge.
Claim 10
Dependent Claim
22 words
Process according to claim 7 wherein said hydrogen ions are provided by H 2 O, which is dissociated by said electric discharge.
Claim 11
Dependent Claim
33 words
Process according to claim 1 in which said Argon and hydrogen or said Argon and H 2 O are present in said rarefied atmosphere in comparable portions, measured according to their partial pressures.
Claim 12
Dependent Claim
19 words
Process according to claim 10 in which said partial pressures are in the range from 0.5 to 50 millitorr.
Claim 13
Dependent Claim
17 words
Process according to claim 10 in which said partial pressures are about 3 to about 15 millitorr.
References Cited (Backward Citations)
US3868271A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-04-03 | 1981-10-03 | 1982-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-04-03 | 1985-10-03 | 1986-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-04-03 | 1989-10-03 | 1990-04-04 | $7700.00 | Window Closed / Lapsed |