Thyristor having a plurality of emitter shorts in defined spacial relationship

Claim 1

A thyristor device comprising a body of semiconductor material and electrical contact means; said body of semiconductor material comprising zones of alternate semiconductivity disposed in PN junction forming relationships, an emitter zone of a first type of semiconductivity disposed at a top surface of the body, a base zone of a second type of semiconductivity disposed in the body beneath the emitter zone, a plurality of small base portions of said second type of semiconductivity disposed in the emitter zone adjoining the base zone and extending from the base zone through the emitter zone to the top surface of the body, said small base portions forming circular shaped areas at the top surface of the body, the diameter of each of said circular shaped areas being less than 20 microns, said circular shaped areas having centers located at preferred points on the surface of the body such that the centers of adjacent circular shaped areas are separated from each other by a like distance, the ratio of said like distance to said diameter of said circular shaped areas being greater than 3; said electrical contact means comprising an emitter electrode affixed to the top surface of said body, in electrical contact with the emitter zone and the circular shaped areas of said small base portions.