Patent US4077019A successfully refreshed from Google Patents.
US4077019A
Expired / Lapsed
US
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Transverse mode control in double-heterostructure lasers utilizing substrate loss
Assignee: Xerox Corp
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Filing: 1976-01-05
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Granted: 1978-02-28
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Expires: 1996-01-05
Abstract
Abstract A heterojunction diode laser which achieves transverse mode control by providing adjacent to the active region layer of the laser a layer having a thickness substantially less than the thickness of the active region layer and of a material having a bandgap higher than the bandgap of the material of the active region layer. All transverse modes have increased penetration into a lossy substrate via the thin layer with the loss being least for the lowest order mode such that only the lowest order mode can be made to lase at low pumping current levels.
Inventors
- 👤 William Streifer
- 👤 Donald R. Scifres
- 👤 Robert D. Burnham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 20:20
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/2004
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
236 words
An electrically pumped, solid-sate, diode laser comprising: a semiconductor body including a radiation lossy portion and a plurality of layers adjacent said radiation lossy portion, one of said layers being an active region layer; a rectifying junction within said body, said rectifying junction bordering said active region layer; means for forward biasing said rectifying junction, carriers injected across said junction upon sufficient forward biasing of said junction undergoing radiative recombination in said active region layer to generate stimulated coherent radiation including ordered transverse electric modes; said active region layer being separated from said radiation lossy portion of said body by at least another of said plurality of layers, said another layer being of a material having a bandgap higher than the bandgap of the material of said active region layer, said active region layer being at least 0.8 micron thick and said another layer being not greater than about 0.5 micron thick, whereby the higher order transverse electric modes of said ordered transverse electric modes have substantial penetration into said radiation lossy portion of said body and the lowest order transverse electric mode of said ordered transverse electric modes has little penetration into said radiation lossy portion of said body such that the radiation losses of the higher order transverse electric modes are substantially greater than the radiation losses of the lowest order transverse electric mode providing lowest order transverse electric mode operation by the laser.
Claim 2
Dependent Claim
236 words
An electrically pumped, solid-sate, diode laser comprising: a semiconductor body including a radiation lossy portion and a plurality of layers adjacent said radiation lossy portion, one of said layers being an active region layer; a rectifying junction within said body, said rectifying junction bordering said active region layer; means for forward biasing said rectifying junction, carriers injected across said junction upon sufficient forward biasing of said junction undergoing radiative recombination in said active region layer to generate stimulated coherent radiation including ordered transverse electric modes; said active region layer being separated from said radiation lossy portion of said body by at least another of said plurality of layers, said another layer being of a material having a bandgap higher than the bandgap of the material of said active region layer, said active region layer being at least 0.8 micron thick and said another layer being not greater than about 0.5 micron thick, whereby the higher order transverse electric modes of said ordered transverse electric modes have substantial penetration into said radiation lossy portion of said body and the lowest order transverse electric mode of said ordered transverse electric modes has little penetration into said radiation lossy portion of said body such that the radiation losses of the higher order transverse electric modes are substantially greater than the radiation losses of the lowest order transverse electric mode providing lowest order transverse electric mode operation by the laser.
Claim 3
Dependent Claim
210 words
An electrically pumped, solid-state, diode laser comprising: a semiconductor body including a radiation lossy portion and a plurality of layers adjacent said radiation lossy portion, one of said layers being the active gain region layer, a rectifying junction within said body at a boundary of said active region layer, and means for forward biasing said rectifying junction, carriers injected across said junction upon sufficient forward biasing of said junction undergoing radiative recombination in said active gain region to generate stimulated coherent radiation including ordered transverse electric modes, said active gain region layer being separated from said radiation lossy portion of said body by another thin layer of said plurality of layers, said radiation lossy portion being substantially thicker than said active gain region layer whereby the higher order transverse electric modes of said ordered transverse electric modes have substantial penetration into said radiation lossy portion of said body and the lowest order transverse electric mode of said ordered transverse electric modes has little penetration into said radiation lossy portion of said body such that the radiation losses of the higher order transverse electric modes are substantially greater than the radiation losses of the lowest order transverse electric mode and lowest order transverse electric mode operation is provided by the laser.
Claim 4
Dependent Claim
210 words
An electrically pumped, solid-state, diode laser comprising: a semiconductor body including a radiation lossy portion and a plurality of layers adjacent said radiation lossy portion, one of said layers being the active gain region layer, a rectifying junction within said body at a boundary of said active region layer, and means for forward biasing said rectifying junction, carriers injected across said junction upon sufficient forward biasing of said junction undergoing radiative recombination in said active gain region to generate stimulated coherent radiation including ordered transverse electric modes, said active gain region layer being separated from said radiation lossy portion of said body by another thin layer of said plurality of layers, said radiation lossy portion being substantially thicker than said active gain region layer whereby the higher order transverse electric modes of said ordered transverse electric modes have substantial penetration into said radiation lossy portion of said body and the lowest order transverse electric mode of said ordered transverse electric modes has little penetration into said radiation lossy portion of said body such that the radiation losses of the higher order transverse electric modes are substantially greater than the radiation losses of the lowest order transverse electric mode and lowest order transverse electric mode operation is provided by the laser.
Claim 5
Dependent Claim
215 words
An electrically pumped, solid-state, diode laser comprising: a semiconductor body including a radiation lossy portion and a plurality of layers adjacent said radiation lossy portion, one of said layers being the active gain region layer, said active gain region layer being homogeneous, a rectifying junction within said body at a boundary of said active region layer, and means for forward biasing said rectifying junction, carriers injected across said junction upon sufficient forward biasing of said junction undergoing radiative recombination in said active gain region to generate stimulated coherent radiation including ordered transverse electric modes, said active gain region layer being separated from said radiation lossy portion of said body by another thin layer of said plurality of layers, said radiation lossy portion being substantially thicker than said active gain region layer whereby the higher order transverse electric modes of said ordered transverse electric modes have substantial penetration into said radiation lossy portion of said body and the lowest order transverse electric mode of said ordered transverse electric modes has little penetration into said radiation lossy portion of said body such that the radiation losses of the higher order transverse electric modes are substantially greater than the radiation losses of the lowest order transverse electric mode providing lowest order transverse electric mode operation by the laser.
Claim 6
Dependent Claim
215 words
An electrically pumped, solid-state, diode laser comprising: a semiconductor body including a radiation lossy portion and a plurality of layers adjacent said radiation lossy portion, one of said layers being the active gain region layer, said active gain region layer being homogeneous, a rectifying junction within said body at a boundary of said active region layer, and means for forward biasing said rectifying junction, carriers injected across said junction upon sufficient forward biasing of said junction undergoing radiative recombination in said active gain region to generate stimulated coherent radiation including ordered transverse electric modes, said active gain region layer being separated from said radiation lossy portion of said body by another thin layer of said plurality of layers, said radiation lossy portion being substantially thicker than said active gain region layer whereby the higher order transverse electric modes of said ordered transverse electric modes have substantial penetration into said radiation lossy portion of said body and the lowest order transverse electric mode of said ordered transverse electric modes has little penetration into said radiation lossy portion of said body such that the radiation losses of the higher order transverse electric modes are substantially greater than the radiation losses of the lowest order transverse electric mode providing lowest order transverse electric mode operation by the laser.
Claim 7
Dependent Claim
228 words
An electrically pumped, solid-state, diode laser comprising: a semiconductor body including a radiation lossy portion and a plurality of layers adjacent said radiation lossy portion, one of said layers being the active gain region layer, said active gain region layer being homogeneous, a rectifying junction within said body at a boundary of said active region layer, and means for forward biasing said rectifying junction, carriers injected across said junction upon sufficient forward biasing of said junction undergoing radiative recombination in said active gain region to generate stimulated coherent radiation including ordered transverse electric modes, said active gain region layer being separated from said radiation lossy portion of said body by another layer of said plurality of layers, said another layer being not greater than about 0.5 micron thick, and said radiation lossy portion being substantially thicker than said active gain region layer whereby the higher order transverse electric modes of said ordered transverse electric modes have substantial penetration into said radiation lossy portion of said body and the lowest order transverse electric mode of said ordered transverse electric modes has little penetration into said radiation lossy portion of said body such that the radiation losses of the higher order transverse electric modes are substantially greater than the radiation losses of the lowest order transverse electric mode and lowest order transverse electric mode operation is provided by the laser.
Claim 8
Dependent Claim
228 words
An electrically pumped, solid-state, diode laser comprising: a semiconductor body including a radiation lossy portion and a plurality of layers adjacent said radiation lossy portion, one of said layers being the active gain region layer, said active gain region layer being homogeneous, a rectifying junction within said body at a boundary of said active region layer, and means for forward biasing said rectifying junction, carriers injected across said junction upon sufficient forward biasing of said junction undergoing radiative recombination in said active gain region to generate stimulated coherent radiation including ordered transverse electric modes, said active gain region layer being separated from said radiation lossy portion of said body by another layer of said plurality of layers, said another layer being not greater than about 0.5 micron thick, and said radiation lossy portion being substantially thicker than said active gain region layer whereby the higher order transverse electric modes of said ordered transverse electric modes have substantial penetration into said radiation lossy portion of said body and the lowest order transverse electric mode of said ordered transverse electric modes has little penetration into said radiation lossy portion of said body such that the radiation losses of the higher order transverse electric modes are substantially greater than the radiation losses of the lowest order transverse electric mode and lowest order transverse electric mode operation is provided by the laser.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-02-27 | 1981-08-29 | 1982-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-02-27 | 1985-08-29 | 1986-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-02-27 | 1989-08-29 | 1990-02-28 | $7700.00 | Window Closed / Lapsed |