Patent US4076555A successfully refreshed from Google Patents.
US4076555A
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US
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Irradiation for rapid turn-off reverse blocking diode thyristor
Assignee: Westinghouse Electric Corp
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Filing: 1976-05-17
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Granted: 1978-02-28
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Expires: 1996-05-17
Abstract
Abstract The turn-off time of a reverse blocking diode thyristor is decreased without significantly effecting other electrical characteristics by irradiating with a radiation source to a dosage corresponding to between about 4 x 1013 and about 2 x 1014 electrons/cm2 and preferably to between about 6 x 1013 and about 2 x 1014 electrons/cm2 with 2 MeV electron radiation source. Preferably the radiation source is electron radiation with an energy greater than 1 MeV.
Inventors
- 👤 Chang K. Chu
- 👤 John Bartko
- 👤 Patrick E. Felice
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:38
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/80; H10P; H10P34/00; H10P34/40
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
82 words
A method of decreasing the turn-off time of a reverse blocking diode thyristor without significantly affecting other electrical characteristics comprising the steps of: A. positioning a reverse blocking diode thyristor semiconductor body with a major surface thereof to be exposed to a radiation source; and B. thereafter irradiating the reverse blocking diode thyristor semiconductor body with the radiation source to a dosage corresponding to between about 4 × 10 13 and 2 × 10 14 electrons/cm 2 with 2 MeV electron radiation.
Claim 2
Independent Claim
82 words
A method of decreasing the turn-off time of a reverse blocking diode thyristor without significantly affecting other electrical characteristics comprising the steps of: A. positioning a reverse blocking diode thyristor semiconductor body with a major surface thereof to be exposed to a radiation source; and B. thereafter irradiating the reverse blocking diode thyristor semiconductor body with the radiation source to a dosage corresponding to between about 4 × 10 13 and 2 × 10 14 electrons/cm 2 with 2 MeV electron radiation.
Claim 3
Dependent Claim
47 words
A method of decreasing the turn-off time of a reverse blocking diode thyristor without significantly affecting other electrical characteristics as set forth in claim 1 wherein: in step B, the dosage level corresponds to greater than 6 × 10 13 electrons/cm 2 with 2 MeV electron radiation.
Claim 4
Dependent Claim
32 words
A method of decreasing the turn-off of a reverse blocking diode thyristor without significantly affecting the other electrical characteristics as set forth in claim 1 wherein: the radiation source is electron radiation.
Claim 5
Dependent Claim
36 words
A method of decreasing the turn-off time of a reverse blocking diode thyristor without significantly affecting the other electrical characteristics as set forth in claim 3 wherein: the electron radiation energy is greater than 1 MeV.
Claim 6
Dependent Claim
44 words
A method of decreasing a turn-off time of a reverse blocking diode thyristor without significantly affecting the other electrical characteristics as set forth in claim 4 wherein: in step B, the dosage level corresponds to greater than 6 × 10 13 electrons/cm 2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-02-27 | 1981-08-29 | 1982-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-02-27 | 1985-08-29 | 1986-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-02-27 | 1989-08-29 | 1990-02-28 | $7700.00 | Window Closed / Lapsed |