Patent US2367803A successfully refreshed from Google Patents.
Patent US4072593A successfully refreshed from Google Patents.
US4072593A
Expired / Lapsed
US
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Process for production of a resistance element for resistance thermometers
Assignee: Evonik Operations GmbH
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Filing: 1976-12-16
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Granted: 1978-02-07
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Expires: 1996-12-16
Abstract
Abstract There is provided a process of producing a resistance element for a resistance thermometer consisting of a thin platinum layer on an insulating solid as a carrier, by sputtering the platinum layer on the solid in a krypton-oxygen or xenon-oxygen mixture.
Inventors
- 👤 Walter Diehl
- 👤 Wolfgang Koehler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 05:12
CPC Classifications
G; G01; G01K; G01K7/00; G01K7/16; G01K7/18; H; H01; H01C; H01C17/00; H01C17/06; H01C17/075; H01C17/12
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
56 words
A process of producing a resistance element for a resistance thermometer by sputtering, said resistance element consisting essentially of a thin platinum layer as the resistance material on an insulating material as a substrate, the improvement comprising applying the platinum to the substrate by sputtering in a gaseous oxidizing atmosphere consisting essentially of krypton-oxygen or xenon-oxygen.
Claim 2
Dependent Claim
56 words
A process of producing a resistance element for a resistance thermometer by sputtering, said resistance element consisting essentially of a thin platinum layer as the resistance material on an insulating material as a substrate, the improvement comprising applying the platinum to the substrate by sputtering in a gaseous oxidizing atmosphere consisting essentially of krypton-oxygen or xenon-oxygen.
Claim 3
Dependent Claim
27 words
A process according to claim 1 comprising the additional step of tempering the thin platinum layer at a temperature between 700° and 1200° C. after the sputtering.
Claim 4
Dependent Claim
23 words
The process according to claim 2 wherein a bias voltage less than the sputtering voltage is applied to the substrate during the sputtering.
Claim 5
Dependent Claim
23 words
The process according to claim 1, wherein a bias voltage less than the sputtering voltage is applied to the substrate during the sputtering.
Claim 6
Dependent Claim
16 words
The process of claim 1 wherein the gaseous atmosphere contains 20% oxygen and the balance xenon.
Claim 7
Dependent Claim
23 words
The process of claim 1 wherein the gaseous atmosphere is 10 to 50% oxygen by volume and the balance is krypton or xenon.
Claim 8
Dependent Claim
21 words
The process of claim 6 wherein the gaseous atmosphere is 10 to 50% oxygen by volume and the balance is xenon.
Claim 9
Dependent Claim
11 words
The process of claim 7 wherein the sputtering is RF sputtering.
Claim 10
Dependent Claim
11 words
The process of claim 6 wherein the sputtering is RF sputtering.
Claim 11
Dependent Claim
11 words
The process of claim 1 wherein the sputtering is RF sputtering.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-02-06 | 1981-08-08 | 1982-02-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-02-06 | 1985-08-08 | 1986-02-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-02-06 | 1989-08-08 | 1990-02-07 | $7700.00 | Window Closed / Lapsed |