Patent US4071945A successfully refreshed from Google Patents.
US4071945A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a semiconductor display device
Assignee: Individual
•
Filing: 1976-07-27
•
Granted: 1978-02-07
•
Expires: 1996-07-27
Abstract
Abstract A method for manufacturing a semiconductor indicating instrument or display device employing a silicon carbide crystal having a first ohmic contact with an n-type region and at least one second ohmic contact with a p-type region. Another region is disposed between the regions of opposite types of conductivity. The silicon carbide crystal also has an additional region with structure defects which are clusters with a concentration of 1019 cm-3 to 1022 cm-3, that region adjoining the second ohmic contact and having a thickness greater than that of the p-type region by at least 0.05 m mu . The method is characterized in that, in order to produce the additional region, the p-type region is bombarded with ions of an inert gas with an ion flow density of 3.1x1013 ion/cm2xsec to 1.25x1014 ion/cm2xsec, an ion energy of 10 to 400 keV and an irradiation dose of 1.2x1016 ion/cm2 to 6.2x1017 ion/cm2.
Inventors
- 👤 Anatoly P. Karatsjuba
- 👤 Tatyana G. Kmita
- 👤 Igor I. Kruglov
- 👤 Vladimir I. Kurinny
- 👤 Anatoly I. Kurnosov
- 👤 Ivor V. Ryzhikov
- 👤 Vladimir V. Judin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:39
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10H20/01; H10H20/011; H10H20/014; H10H29/00; H10H29/10; H10H29/14; H10H29/142; Y; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
160 words
A method for manufacturing a semiconductor display device, comprising the steps of: forming in an n-type silicon-carbide crystal a diffused p-type region and a diffused region with a luminescence activator disposed between an n-type region and the newly formed p-type region; the formation being effected by way of introducing an impurity into the crystal, followed by the formation of a first ohmic contact attached to the n-type region, and at least one second ohmic contact attached to the p-type region; thereafter bombarding the p-type region with ions of an inert gas in order to produce an additional region of silicon carbide, incorporating clusters of structural radiation defects with a concentration of 10 19 cm -3 to 10 22 cm -3 , at an ion-flow density of 3.1·10 13 ion/cm 2 ·sec to 1.25·10 14 ion/cm 2 ·sec, an ion energy of 10 to 400 keV, and an irradiation dose of 1.2·10 16 ion/cm 2 to 6.2·10 17 ion/cm 2 .
Claim 2
Independent Claim
160 words
A method for manufacturing a semiconductor display device, comprising the steps of: forming in an n-type silicon-carbide crystal a diffused p-type region and a diffused region with a luminescence activator disposed between an n-type region and the newly formed p-type region; the formation being effected by way of introducing an impurity into the crystal, followed by the formation of a first ohmic contact attached to the n-type region, and at least one second ohmic contact attached to the p-type region; thereafter bombarding the p-type region with ions of an inert gas in order to produce an additional region of silicon carbide, incorporating clusters of structural radiation defects with a concentration of 10 19 cm -3 to 10 22 cm -3 , at an ion-flow density of 3.1·10 13 ion/cm 2 ·sec to 1.25·10 14 ion/cm 2 ·sec, an ion energy of 10 to 400 keV, and an irradiation dose of 1.2·10 16 ion/cm 2 to 6.2·10 17 ion/cm 2 .
Claim 3
Dependent Claim
39 words
The method as defined in claim 1, wherein neon is used as the inert gas, the ion energy being between 10 and 50 keV, and the irradiation dose between 1.2·10 17 ion/cm 2 and 6.2·10 17 ion/cm 2 .
Claim 4
Dependent Claim
39 words
The method as defined in claim 1, wherein argon is used as the inert gas, the ion energy being between 20 and 100 keV, and the irradiation dose between 6.2·10 16 ion/cm 2 to 3.1·10 17 ion/cm 2 .
Claim 5
Dependent Claim
39 words
The method as defined in claim 1, wherein krypton is used as the inert gas, the ion energy being between 40 and 200 keV, and the irradiation dose between 3.1·10 16 ion/cm 2 and 6.2·10 16 ion/cm 2 .
Claim 6
Dependent Claim
39 words
The method as defined in claim 1, wherein xenon is used as the inert gas, the ion energy being between 80 and 400 keV, and the irradiation dose between 1.2·10 16 ion/cm 2 and 3.1·10 16 ion/cm 2 .
Claim 7
Dependent Claim
68 words
The method as defined in claim 1, wherein said bombarding step with ions of the inert gas is followed by bombardment with accelerated ions of a chemically active element at an ion-flow density of 6.2·10 13 ion/cm 2 ·sec to 3.1·10 14 ion/cm 2 ·sec, an ion energy of 10 to 250 keV, and an irradiation dose of 1.2·10 17 ion/cm 2 to 6.2·10 18 ion/cm 2 .
Claim 8
Dependent Claim
41 words
The method as defined in claim 6, whereion ions of nitrogen are used as the active element, the ion energy being between 10 and 100 keV, and the irradiation dose between 4·10 17 ion/cm 2 and 2·10 18 ion/cm 2 .
Claim 9
Dependent Claim
42 words
The method as defined in claim 6, wherein diatomic ions of nitrogen are used as the active element, the ion energy being between 20 and 200 keV, and the irradiation dose between 2·10 17 ion/cm 2 and 1·10 18 ion/cm 2 .
Claim 10
Dependent Claim
42 words
The method as defined in claim 6, wherein atomic ions of oxygen are used as the active element, the ion energy being between 20 and 100 keV, and the irradiation dose between 3.1·10 17 ion/cm 2 and 1.2·10 18 ion/cm 2 .
Claim 11
Dependent Claim
42 words
The method as defined in claim 6, wherein diatomic ions of oxygen are used as the active element, the ion energy being between 40 and 250 keV, and the irradiation dose between 1.2·10 17 ion/cm 2 and 6.2·10 17 ion/cm 2 .
Claim 12
Dependent Claim
41 words
The method as defined in claim 6, wherein ions of carbon are used as the active element, the ion energy being between 20 and 200 keV, and the irradiation dose between 6.2·10 17 ion/cm 2 and 6.2·10 18 ion/cm 2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-02-06 | 1981-08-08 | 1982-02-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-02-06 | 1985-08-08 | 1986-02-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-02-06 | 1989-08-08 | 1990-02-07 | $7700.00 | Window Closed / Lapsed |